BFU530AVL
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NXP USA Inc. BFU530AVL

Manufacturer No:
BFU530AVL
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF TRANS NPN 12V 11GHZ TO236AB
Delivery:
Payment:
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Product Introduction

Overview

The BFU530AVL is an NPN silicon RF transistor produced by NXP USA Inc. It is designed for high-speed, low-noise applications and is part of the BFU5 family of transistors. This transistor is packaged in a plastic, 3-pin SOT23 (TO-236-3, SC-59) package, making it suitable for surface mount technology (SMT) assembly. The BFU530AVL is RoHS compliant, ensuring it meets environmental standards for lead-free electronics.

Key Specifications

ParameterValue
ManufacturerNXP USA Inc.
Part NumberBFU530AVL
PackageTO-236-3, SC-59, SOT-23-3
Transistor TypeNPN Bipolar Junction Transistor (BJT)
Voltage - Collector Emitter Breakdown (Max)12 V
Transition Frequency11 GHz
DC Current Gain (hFE) (Min) @ Ic, VceNot specified in provided sources, but typically around 100-200 for similar NPN BJTs
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Mounting TypeSurface Mount
Part StatusActive

Key Features

  • High-speed operation with a transition frequency of 11 GHz, making it suitable for RF applications.
  • Low noise characteristics, ideal for high-frequency and sensitive signal processing.
  • Compact SOT23 package, facilitating surface mount assembly and reducing board space.
  • RoHS compliant, ensuring environmental sustainability and compliance with regulations.
  • NPN silicon construction, providing reliable performance in a variety of RF circuits.

Applications

The BFU530AVL is designed for use in high-speed, low-noise RF applications. Some common uses include:

  • RF amplifiers and pre-amplifiers in communication systems.
  • High-frequency signal processing in radar and microwave systems.
  • Low-noise amplification in audio and radio equipment.
  • General-purpose RF circuits requiring high transition frequencies and low noise.

Q & A

  1. What is the package type of the BFU530AVL? The BFU530AVL is available in TO-236-3, SC-59, and SOT-23-3 packages.
  2. What is the maximum collector-emitter breakdown voltage of the BFU530AVL? The maximum collector-emitter breakdown voltage is 12 V.
  3. What is the transition frequency of the BFU530AVL? The transition frequency is 11 GHz.
  4. Is the BFU530AVL RoHS compliant? Yes, the BFU530AVL is ROHS3 compliant.
  5. What is the mounting type of the BFU530AVL? The BFU530AVL is a surface mount component.
  6. What are the typical applications of the BFU530AVL? The BFU530AVL is used in RF amplifiers, high-frequency signal processing, and low-noise amplification in various communication and audio systems.
  7. What is the transistor type of the BFU530AVL? The BFU530AVL is an NPN Bipolar Junction Transistor (BJT).
  8. What is the moisture sensitivity level (MSL) of the BFU530AVL? The MSL is 1 (Unlimited).
  9. Is the BFU530AVL still in production? Yes, the BFU530AVL is an active part.
  10. Where can I find the datasheet for the BFU530AVL? The datasheet can be found on the NXP website, Digi-Key, and other electronic component distributors.

Product Attributes

Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):12V
Frequency - Transition:11GHz
Noise Figure (dB Typ @ f):1.1dB @ 1.8GHz
Gain:12dB
Power - Max:450mW
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 10mA, 8V
Current - Collector (Ic) (Max):40mA
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23 (TO-236AB)
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Same Series
BFU530AVL
BFU530AVL
RF TRANS NPN 12V 11GHZ TO236AB

Similar Products

Part Number BFU530AVL BFU550AVL BFU530VL BFU530XVL BFU520AVL
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Active Active Active Active
Transistor Type NPN NPN NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 12V 12V 12V 12V 12V
Frequency - Transition 11GHz 11GHz 11GHz 11GHz 10GHz
Noise Figure (dB Typ @ f) 1.1dB @ 1.8GHz 1.4dB @ 1.8GHz 1.1dB @ 1.8GHz 1.1dB @ 1.8GHz 1dB @ 1.8GHz
Gain 12dB 12dB 15.5dB 16.5dB 12.5dB
Power - Max 450mW 450mW 450mW 450mW 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 8V 60 @ 15mA, 8V 60 @ 10mA, 8V 60 @ 10mA, 8V 60 @ 5mA, 8V
Current - Collector (Ic) (Max) 40mA 50mA 40mA 40mA 30mA
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-253-4, TO-253AA TO-253-4, TO-253AA TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23 (TO-236AB) SOT-23 (TO-236AB) SOT-143B SOT-143B SOT-23 (TO-236AB)

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