BFR93A215
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NXP USA Inc. BFR93A215

Manufacturer No:
BFR93A215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
RF BIPOLAR TRANSISTOR
Delivery:
Payment:
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Product Introduction

Overview

The BFR93A215 is an NPN wideband transistor produced by NXP USA Inc. This transistor is designed for high-frequency applications, particularly in the RF range. It is packaged in a surface-mount SOT23 (TO-236AB) package, making it suitable for compact and high-density electronic designs. The BFR93A215 is known for its high power gain, low noise figure, and very low intermodulation distortion, which are critical parameters for RF amplifiers and oscillators.

Key Specifications

Parameter Conditions Typical Maximum Unit
Collector-Base Voltage (VCBO) Open Emitter - 15 V
Collector-Emitter Voltage (VCEO) Open Base - 12 V
Emitter-Base Voltage (VVEBO) Open Collector - 2 V
Collector Current (IC) DC - 35 mA
Total Power Dissipation (Ptot) Ts ≤ 95°C - 300 mW
Transition Frequency (ft) - - 6 GHz
DC Current Gain (hFE) IC = 30 mA; VCE = 5 V 40 90 -
Noise Figure (Typ) - - 1.9 dB
Operating Temperature Max - - 175 °C

Key Features

  • High power gain, making it suitable for RF amplifiers and oscillators.
  • Low noise figure, ensuring minimal noise in high-frequency applications.
  • Very low intermodulation distortion, critical for maintaining signal integrity.
  • Surface-mount SOT23 package, ideal for compact designs.
  • PNP complement available as BFT93.

Applications

  • RF wideband amplifiers and oscillators.
  • High-frequency electronic circuits requiring low noise and high gain.
  • Communication systems, such as radio frequency (RF) transceivers.
  • Measurement and test equipment where high-frequency signal integrity is crucial.

Q & A

  1. What is the BFR93A215 transistor used for?

    The BFR93A215 is used in RF wideband amplifiers and oscillators due to its high power gain and low noise figure.

  2. What is the maximum collector current of the BFR93A215?

    The maximum collector current is 35 mA.

  3. What is the transition frequency of the BFR93A215?

    The transition frequency is 6 GHz.

  4. What is the typical noise figure of the BFR93A215?

    The typical noise figure is 1.9 dB.

  5. What is the maximum operating temperature of the BFR93A215?

    The maximum operating temperature is 175°C.

  6. What package type does the BFR93A215 come in?

    The BFR93A215 comes in a surface-mount SOT23 package.

  7. Is there a PNP complement for the BFR93A215?

    Yes, the PNP complement is the BFT93.

  8. What are the key applications of the BFR93A215?

    The key applications include RF wideband amplifiers, oscillators, and high-frequency electronic circuits.

  9. What are the limiting values for the collector-base voltage and collector-emitter voltage?

    The collector-base voltage (VCBO) is 15 V, and the collector-emitter voltage (VCEO) is 12 V.

  10. What is the total power dissipation of the BFR93A215?

    The total power dissipation (Ptot) is 300 mW at Ts ≤ 95°C.

Product Attributes

Transistor Type:- 
Voltage - Collector Emitter Breakdown (Max):- 
Frequency - Transition:- 
Noise Figure (dB Typ @ f):- 
Gain:- 
Power - Max:- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Current - Collector (Ic) (Max):- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number BFR93A215 BFR93A,215
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Obsolete
Transistor Type - NPN
Voltage - Collector Emitter Breakdown (Max) - 12V
Frequency - Transition - 6GHz
Noise Figure (dB Typ @ f) - 1.9dB ~ 3dB @ 1GHz ~ 2GHz
Gain - -
Power - Max - 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce - 40 @ 30mA, 5V
Current - Collector (Ic) (Max) - 35mA
Operating Temperature - 175°C (TJ)
Mounting Type - Surface Mount
Package / Case - TO-236-3, SC-59, SOT-23-3
Supplier Device Package - SOT-23 (TO-236AB)

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