Overview
The BFU550XR215 is an NPN silicon RF transistor designed for high-speed, low-noise applications. It is part of the BFU5 family of transistors and is packaged in a plastic, 4-pin dual-emitter SOT143R package. This transistor is suitable for small signal to medium power applications up to 2 GHz and is AEC-Q101 qualified, making it reliable for automotive and industrial use.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Voltage (VCB) | Open Emitter | - | - | 24 | V |
| Collector-Emitter Voltage (VCE) | Shorted Base | - | - | 24 | V |
| Emitter-Base Voltage (VEB) | Open Collector | - | - | 2 | V |
| Collector Current (IC) | - | - | 15 | 50 | mA |
| Total Power Dissipation (Ptot) | Tsp ≤ 87 °C | - | - | 450 | mW |
| DC Current Gain (hFE) | IC = 15 mA; VCE = 8 V | 60 | 95 | 200 | - |
| Transition Frequency (fT) | IC = 25 mA; VCE = 8 V; f = 900 MHz | - | 11 | - | GHz |
| Minimum Noise Figure (NFmin) | IC = 1 mA; VCE = 8 V; f = 900 MHz; ΓS = Γopt; ZS = 50 Ω | - | 0.7 | - | dB |
| Maximum Stable Gain (Gp(max)) | IC = 15 mA; VCE = 8 V; f = 900 MHz | - | 21.5 | - | dB |
| Junction Temperature (Tj) | - | -40 | - | 150 | °C |
Key Features
- Low noise, high breakdown RF transistor
- AEC-Q101 qualified for automotive reliability
- Minimum noise figure (NFmin) = 0.7 dB at 900 MHz
- Maximum stable gain of 21.5 dB at 900 MHz
- 11 GHz fT silicon technology
- High-speed and low-noise performance suitable for up to 2 GHz applications
Applications
- Applications requiring high supply voltages and high breakdown voltages
- Broadband amplifiers up to 2 GHz
- Low noise amplifiers for ISM (Industrial, Scientific, and Medical) applications
- ISM band oscillators
Q & A
- What is the BFU550XR215 transistor used for?
The BFU550XR215 is used for high-speed, low-noise applications in RF circuits, such as broadband amplifiers and ISM band oscillators.
- What is the maximum collector-emitter voltage of the BFU550XR215?
The maximum collector-emitter voltage (VCE) is 24 V.
- What is the typical DC current gain (hFE) of the BFU550XR215?
The typical DC current gain (hFE) is 95 at IC = 15 mA and VCE = 8 V.
- What is the transition frequency (fT) of the BFU550XR215?
The transition frequency (fT) is 11 GHz at IC = 25 mA and VCE = 8 V.
- What is the minimum noise figure (NFmin) of the BFU550XR215?
The minimum noise figure (NFmin) is 0.7 dB at 900 MHz.
- Is the BFU550XR215 AEC-Q101 qualified?
Yes, the BFU550XR215 is AEC-Q101 qualified, making it suitable for automotive applications.
- What is the maximum stable gain of the BFU550XR215?
The maximum stable gain is 21.5 dB at 900 MHz.
- What is the junction temperature range of the BFU550XR215?
The junction temperature range is from -40°C to +150°C.
- What package type is the BFU550XR215 available in?
The BFU550XR215 is available in a plastic, 4-pin dual-emitter SOT143R package.
- What are some common applications of the BFU550XR215?
Common applications include broadband amplifiers up to 2 GHz, low noise amplifiers for ISM applications, and ISM band oscillators.
