Overview
The BFR93AWE6327, produced by Infineon Technologies, is an NPN Silicon RF Transistor designed for low-noise, high-gain broadband amplifiers. This component is particularly suited for applications requiring high performance in radio frequency (RF) circuits. It is available in a Pb-free (RoHS compliant) and halogen-free SOT-323 package, ensuring environmental compliance and reliability.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-emitter voltage | VCEO | 12 | V |
| Collector-emitter voltage | VCES | 20 | V |
| Collector-base voltage | VCBO | 20 | V |
| Emitter-base voltage | VEBO | 2 | V |
| Collector current | IC | 90 | mA |
| Base current | IB | 9 | mA |
| Total power dissipation | Ptot | 300 | mW |
| Junction temperature | TJ | 150 | °C |
| Ambient temperature | TA | -65 to 150 | °C |
| Storage temperature | TStg | -65 to 150 | °C |
| Transition frequency | fT | 4.5 to 6 | GHz |
| Minimum noise figure at 900 MHz | NFmin | 1.5 | dB |
| Power gain, maximum available at 900 MHz | Gma | 15.5 | dB |
Key Features
- Low-noise, high-gain performance suitable for broadband amplifiers at collector currents from 2 mA to 30 mA.
- Pb-free (RoHS compliant) and halogen-free package, ensuring environmental compliance and reliability.
- High transition frequency (fT) of 4.5 to 6 GHz, making it suitable for high-frequency applications.
- Low minimum noise figure (NFmin) of 1.5 dB at 900 MHz, ideal for low-noise amplifiers.
- Maximum available power gain (Gma) of 15.5 dB at 900 MHz, enhancing signal strength.
Applications
- Wireless Communications: Suitable for cellular and cordless phones, DECT, and other wireless communication devices.
- Low Noise Amplifiers (LNA) in RF Front-end: Ideal for applications requiring low noise and high gain in the RF front-end.
- RF Transmitters and Receivers: Excellent choice for radio frequency transmitters, receivers, and amplifiers.
- Tuners, FM, and RF Modems: Applicable in various RF-related devices such as tuners and modems.
Q & A
- What is the BFR93AWE6327 used for? The BFR93AWE6327 is used for low-noise, high-gain broadband amplifiers in various RF applications.
- What is the package type of the BFR93AWE6327? The BFR93AWE6327 is packaged in a Pb-free (RoHS compliant) and halogen-free SOT-323 package.
- What are the key specifications of the BFR93AWE6327? Key specifications include collector-emitter voltage (VCEO) of 12V, collector current (IC) of 90mA, and a transition frequency (fT) of 4.5 to 6 GHz.
- What are the typical applications of the BFR93AWE6327? Typical applications include wireless communications, LNA in RF front-end, RF transmitters and receivers, and various RF-related devices.
- What is the minimum noise figure of the BFR93AWE6327 at 900 MHz? The minimum noise figure (NFmin) at 900 MHz is 1.5 dB.
- What is the maximum available power gain of the BFR93AWE6327 at 900 MHz? The maximum available power gain (Gma) at 900 MHz is 15.5 dB.
- Is the BFR93AWE6327 ESD sensitive? Yes, the BFR93AWE6327 is an ESD (Electrostatic discharge) sensitive device, requiring careful handling precautions.
- What is the junction temperature range of the BFR93AWE6327? The junction temperature range is from -65°C to 150°C.
- Can the BFR93AWE6327 be used in life-support devices? No, the BFR93AWE6327 should not be used in life-support devices or systems without the express written approval of Infineon Technologies.
- How is the BFR93AWE6327 typically supplied? The BFR93AWE6327 is typically supplied in tape and reel packaging.
