BSS84P E6433
  • Share:

Infineon Technologies BSS84P E6433

Manufacturer No:
BSS84P E6433
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 170MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS84P E6433, produced by Infineon Technologies, is a P-channel enhancement mode Field-Effect Transistor (FET) designed for various applications requiring high reliability and efficiency. This MOSFET is part of Infineon's broad portfolio of N- and P-channel small signal MOSFETs, which meet and exceed industry quality standards. The BSS84P is packaged in a SOT-23 format, making it suitable for space-constrained designs.

Key Specifications

Parameter Symbol Value Unit
Drain-Source Voltage VDS -60 V
Continuous Drain Current at TA=25°C ID -0.17 A
Pulsed Drain Current at TA=25°C ID(puls) -0.68 A
Drain-Source On-State Resistance at VGS=-4.5V, ID=-0.14A RDS(on) 8 Ω
Gate-Source Voltage VGS ±20 V
Power Dissipation at TA=25°C Ptot 0.36 W
Operating and Storage Temperature Tj, Tstg -55 to +150 °C

Key Features

  • Enhancement mode
  • Logic level
  • Avalanche rated
  • Fast switching
  • Dv/dt rated
  • Pb-free lead-plating
  • RoHS compliant, Halogen-free
  • Qualified according to automotive standards (AEC Q101)
  • PPAP capable
  • Low RDS(on) for higher efficiency and extended battery life
  • Small SOT-23 package saves PCB space
  • Best-in-class quality and reliability

Applications

  • LED Lighting
  • Advanced Driver Assistance Systems (ADAS)
  • Body control units
  • Switch-Mode Power Supplies (SMPS)
  • Motor control
  • Power supply and power generation in consumer electronics
  • DC-to-DC converters
  • Radio-frequency applications
  • Server and telecom systems
  • Solar and automotive technologies

Q & A

  1. What is the drain-source voltage rating of the BSS84P?

    The drain-source voltage rating of the BSS84P is -60 V.

  2. What is the continuous drain current at TA=25°C for the BSS84P?

    The continuous drain current at TA=25°C is -0.17 A.

  3. Is the BSS84P RoHS compliant and Halogen-free?

    Yes, the BSS84P is RoHS compliant and Halogen-free.

  4. What are the key features of the BSS84P?

    The key features include enhancement mode, logic level, avalanche rated, fast switching, dv/dt rated, Pb-free lead-plating, and best-in-class quality and reliability.

  5. What are some potential applications of the BSS84P?

    Potential applications include LED Lighting, ADAS, body control units, SMPS, motor control, and various consumer electronics.

  6. What is the package type of the BSS84P?

    The BSS84P is packaged in a SOT-23 format.

  7. What is the power dissipation at TA=25°C for the BSS84P?

    The power dissipation at TA=25°C is 0.36 W.

  8. Is the BSS84P qualified according to automotive standards?

    Yes, the BSS84P is qualified according to AEC Q101 automotive standards.

  9. What is the operating and storage temperature range for the BSS84P?

    The operating and storage temperature range is -55 to +150°C.

  10. What is the typical drain-source on-state resistance of the BSS84P?

    The typical drain-source on-state resistance at VGS=-4.5V and ID=-0.14A is 8 Ω.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id:2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs:1.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:19 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
376

Please send RFQ , we will respond immediately.

Same Series
BSS84P-E6327
BSS84P-E6327
MOSFET P-CH 60V 170MA SOT23-3
BSS84P E6433
BSS84P E6433
MOSFET P-CH 60V 170MA SOT23-3
BSS84PL6327HTSA1
BSS84PL6327HTSA1
MOSFET P-CH 60V 170MA SOT23-3

Related Product By Categories

IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
BSS138PW,115
BSS138PW,115
Nexperia USA Inc.
MOSFET N-CH 60V 320MA SOT323
NVR5198NLT1G
NVR5198NLT1G
onsemi
MOSFET N-CH 60V 1.7A SOT23-3
FQT7N10LTF
FQT7N10LTF
onsemi
MOSFET N-CH 100V 1.7A SOT223-4
IPW65R080CFDAFKSA1
IPW65R080CFDAFKSA1
Infineon Technologies
MOSFET N-CH 650V 43.3A TO247-3
FQA70N10
FQA70N10
onsemi
MOSFET N-CH 100V 70A TO3PN
FDT1600N10ALZ
FDT1600N10ALZ
onsemi
MOSFET N-CH 100V 5.6A SOT223-4
STD7N52DK3
STD7N52DK3
STMicroelectronics
MOSFET N-CH 525V 6A DPAK
BUK9222-55A,118
BUK9222-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 48A DPAK
MCH3478-TL-W
MCH3478-TL-W
onsemi
MOSFET N-CH 30V 2A 3MCPH
NTNS3A65PZT5G
NTNS3A65PZT5G
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

BAS16UE6327HTSA1
BAS16UE6327HTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SC74-6
BAS16B5003
BAS16B5003
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BAS4002LE6327
BAS4002LE6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BC859CE6327HTSA1
BC859CE6327HTSA1
Infineon Technologies
TRANS PNP 30V 0.1A SOT23
BC860BE6327
BC860BE6327
Infineon Technologies
TRANS PNP 45V 0.1A SOT23-3
BC 860B E6327
BC 860B E6327
Infineon Technologies
TRANS PNP 45V 0.1A SOT23-3
BCX5316H6327XTSA1
BCX5316H6327XTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT89
BC 847CW B6327
BC 847CW B6327
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
BSS83PH6327XTSA1
BSS83PH6327XTSA1
Infineon Technologies
MOSFET P-CH 60V 330MA SOT23-3
FF600R12ME4PB11BOSA1
FF600R12ME4PB11BOSA1
Infineon Technologies
IGBT MODULE VCES 600V 600A
BTS5215LAUMA1
BTS5215LAUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-12
IRPS5401MTRPBF
IRPS5401MTRPBF
Infineon Technologies
POL - SUPIRBUCK