Overview
The BSS84P H6327, produced by Infineon Technologies, is a 60V, 170mA P-Channel MOSFET packaged in a compact SOT-23-3 configuration. This device is designed for precision temperature control, high accuracy sensing, and low noise operation, making it suitable for a wide range of applications. It is particularly useful in low voltage switching applications, battery-powered systems, and portable electronics due to its high current handling, low leakage current, and fast thermal response.
Key Specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies AG |
| Part Number | BSS84P H6327 |
| Technology | Silicon (Si) |
| Mounting Style | SMD/SMT |
| Transistor Polarity | P-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Id - Continuous Drain Current | 170 mA |
| Rds On - Drain-Source Resistance | 5.8 Ohms |
| Vgs - Gate-Source Voltage | -20 V to +20 V |
| Vgs Th - Gate-Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 1 nC |
| Minimum Operating Temperature | -55°C |
| Maximum Operating Temperature | +150°C |
| Pd - Power Dissipation | 360 mW |
| Channel Mode | Enhancement |
| Typical Turn-On Delay Time | 6.7 ns |
| Typical Turn-Off Delay Time | 8.6 ns |
| Rise Time | 16.2 ns |
| Fall Time | 20.5 ns |
| Forward Transconductance - Min | 65 mS |
| Package / Case | SOT-23-3 |
| Length | 2.9 mm |
| Width | 1.3 mm |
| Height | 1.1 mm |
| Unit Weight | 0.000282 oz |
| Factory Pack Quantity | 3000 |
| Qualification | AEC-Q101 |
Key Features
- High current handling
- Low leakage current
- Fast thermal response
- Ruggedized power electronics
- Advanced driver technology
- SMT package design
- RoHS compliant solution
- Industry standard interface
- Precision temperature control
- High accuracy sensing
- Low noise operation
Applications
The BSS84P H6327 is versatile and can be used in various applications, including:
- Low voltage switching applications
- Battery-powered systems
- Portable electronics
- Precision temperature control systems
- High accuracy sensing circuits
- Low noise electronic devices
Q & A
- What is the drain-source breakdown voltage of the BSS84P H6327?
The drain-source breakdown voltage (Vds) of the BSS84P H6327 is 60 V.
- What is the continuous drain current of the BSS84P H6327?
The continuous drain current (Id) of the BSS84P H6327 is 170 mA.
- What is the package type of the BSS84P H6327?
The BSS84P H6327 is packaged in a SOT-23-3 configuration.
- What are the operating temperature ranges for the BSS84P H6327?
The minimum operating temperature is -55°C, and the maximum operating temperature is +150°C.
- Is the BSS84P H6327 RoHS compliant?
Yes, the BSS84P H6327 is RoHS compliant.
- What is the gate-source threshold voltage of the BSS84P H6327?
The gate-source threshold voltage (Vgs Th) of the BSS84P H6327 is 2 V.
- What is the typical turn-on delay time of the BSS84P H6327?
The typical turn-on delay time is 6.7 ns.
- What is the typical turn-off delay time of the BSS84P H6327?
The typical turn-off delay time is 8.6 ns.
- What is the power dissipation of the BSS84P H6327?
The power dissipation (Pd) of the BSS84P H6327 is 360 mW.
- Is the BSS84P H6327 qualified according to AEC-Q101?
Yes, the BSS84P H6327 is qualified according to AEC-Q101.
- What is the forward transconductance of the BSS84P H6327?
The minimum forward transconductance is 65 mS.
