BSS83PL6327HTSA1
  • Share:

Infineon Technologies BSS83PL6327HTSA1

Manufacturer No:
BSS83PL6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 330MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS83PL6327HTSA1 is a P-channel enhancement mode Field-Effect Transistor (FET) produced by Infineon Technologies. This component is part of Infineon's broad portfolio of N- and P-Channel Small Signal MOSFETs, designed to meet and exceed the highest quality requirements in industry-standard packages. The BSS83PL6327HTSA1 is housed in a SOT-23 package and is known for its reliability, fast switching capabilities, and compliance with automotive and industrial standards.

Key Specifications

Parameter Symbol Unit Value
Drain to Source Voltage VDS V -60
Gate to Source Voltage VGS V 20
Continuous Drain Current at Tj = 25°C ID A -0.33
Pulsed Drain Current at Tj = 25°C ID,puls A -1.32
Avalanche Energy, Single Pulse EAS mJ 9.5
Input Capacitance Ciss pF 78
Maximum Operating Temperature Tj °C 150
Power Dissipation at TA = 25°C Ptot W 0.36
Drain-Source On-State Resistance RDS(on) Ω 2

Key Features

  • Enhancement mode operation
  • Logic level input
  • Avalanche rated for robustness against voltage spikes
  • Fast switching capabilities
  • Dv/dt rated for high voltage slew rates
  • Pb-free lead-plating and RoHS compliant, Halogen-free
  • Qualified according to automotive standards (AEC Q101)
  • PPAP (Production Part Approval Process) capable
  • Low RDS(on) for higher efficiency and extended battery life
  • Small SOT-23 package to save PCB space

Applications

  • LED Lighting
  • Advanced Driver Assistance Systems (ADAS)
  • Body Control Units
  • Switch Mode Power Supplies (SMPS)
  • Motor Control

Q & A

  1. What is the drain-source voltage rating of the BSS83PL6327HTSA1?

    The drain-source voltage rating is -60 V.

  2. What is the maximum gate-source voltage for this MOSFET?

    The maximum gate-source voltage is 20 V.

  3. What is the continuous drain current at Tj = 25°C?

    The continuous drain current at Tj = 25°C is -0.33 A.

  4. Is the BSS83PL6327HTSA1 RoHS compliant and Halogen-free?
  5. What are the typical applications of the BSS83PL6327HTSA1?

    Typical applications include LED Lighting, ADAS, body control units, SMPS, and motor control.

  6. What is the maximum operating temperature for this MOSFET?

    The maximum operating temperature is 150 °C.

  7. Does the BSS83PL6327HTSA1 support fast switching?
  8. Is the BSS83PL6327HTSA1 qualified according to automotive standards?
  9. What is the package type of the BSS83PL6327HTSA1?

    The package type is SOT-23.

  10. What is the input capacitance of the BSS83PL6327HTSA1?

    The input capacitance is 78 pF.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:330mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2Ohm @ 330mA, 10V
Vgs(th) (Max) @ Id:2V @ 80µA
Gate Charge (Qg) (Max) @ Vgs:3.57 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:78 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
29

Please send RFQ , we will respond immediately.

Same Series
PMEG1020EH,115
PMEG1020EH,115
DIODE SCHOTTKY 10V 2A SOD123F
BSS83PL6327HTSA1
BSS83PL6327HTSA1
MOSFET P-CH 60V 330MA SOT23-3

Similar Products

Part Number BSS83PL6327HTSA1 BSS84PL6327HTSA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 330mA (Ta) 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 330mA, 10V 8Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id 2V @ 80µA 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 3.57 nC @ 10 V 1.5 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 78 pF @ 25 V 19 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 360mW (Ta) 360mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-SOT23 PG-SOT23
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

NTLJF4156NT1G
NTLJF4156NT1G
onsemi
MOSFET N-CH 30V 2.5A 6WDFN
BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
IRF3710PBF
IRF3710PBF
Infineon Technologies
MOSFET N-CH 100V 57A TO220AB
STP14NK60ZFP
STP14NK60ZFP
STMicroelectronics
MOSFET N-CH 600V 13.5A TO220FP
STL10N65M2
STL10N65M2
STMicroelectronics
MOSFET N-CH 650V 4.5A POWERFLAT
NDUL03N150CG
NDUL03N150CG
onsemi
MOSFET N-CH 1500V 2.5A TO3P
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
BSS84-7
BSS84-7
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
BUK9222-55A,118
BUK9222-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 48A DPAK
FDMC8010ET30
FDMC8010ET30
onsemi
MOSFET N-CH 30V 30A/174A POWER33
MCH3478-TL-W
MCH3478-TL-W
onsemi
MOSFET N-CH 30V 2A 3MCPH

Related Product By Brand

BAW56UE6327
BAW56UE6327
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BAS16UE6727HTSA1
BAS16UE6727HTSA1
Infineon Technologies
DIODE GP 80V 100MA SC74
BAV199E6359
BAV199E6359
Infineon Technologies
RECTIFIER, 2 ELEMENT, 0.2A, 80V
BC857CE6327HTSA1
BC857CE6327HTSA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT23
BC817K16E6433HTMA1
BC817K16E6433HTMA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
BC80740B5003XT
BC80740B5003XT
Infineon Technologies
TRANS PNP 45V 0.5A SOT23
IRF9530NPBF
IRF9530NPBF
Infineon Technologies
MOSFET P-CH 100V 14A TO220AB
IPD60R180P7SAUMA1
IPD60R180P7SAUMA1
Infineon Technologies
MOSFET N-CH 600V 18A TO252-3
IRF5305PBF
IRF5305PBF
Infineon Technologies
MOSFET P-CH 55V 31A TO220AB
BSS123IXTMA1
BSS123IXTMA1
Infineon Technologies
100V N-CH SMALL SIGNAL MOSFET IN
FF600R12ME4PBOSA1
FF600R12ME4PBOSA1
Infineon Technologies
IGBT MODULE VCES 600V 600A
BTS4142NNT
BTS4142NNT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 SOT223