BSS84PL6433HTMA1
  • Share:

Infineon Technologies BSS84PL6433HTMA1

Manufacturer No:
BSS84PL6433HTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 170MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS84PL6433HTMA1 is a discrete semiconductor product manufactured by Infineon Technologies. This component is a P-Channel Enhancement Mode Logic Level MOSFET, designed for small-signal applications. It is notable for its avalanche and dv/dt ratings, making it suitable for a variety of electronic circuits that require high reliability and performance.

However, it is important to note that the BSS84PL6433HTMA1 is currently obsolete and no longer in production. Users are advised to consider available substitutes such as the BSS84PH6327XTSA2 for their design needs.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) -20 V
VGS (Gate-Source Voltage) ±8 V
ID (Continuous Drain Current) -0.17 A
ID,pulse (Pulse Drain Current) -0.34 A
RDS(on) (On-State Drain-Source Resistance) 85
VGS(th) (Threshold Voltage) -0.8 to -3.5 V
TJ (Junction Temperature) -55 to 150 °C

Key Features

  • Enhancement Mode MOSFET: Operates in enhancement mode, requiring a positive gate-source voltage to create a conductive channel.
  • Logic Level: Compatible with logic level signals, making it suitable for use in digital circuits.
  • Avalanche Rated: Designed to withstand high-energy pulses, enhancing reliability in applications where transient voltages may occur.
  • dv/dt Rated: Capable of handling high rates of voltage change, which is crucial in high-frequency applications.
  • Small-Signal Transistor: Optimized for small-signal applications, providing low noise and high fidelity.

Applications

  • Switching Circuits: Used in switching applications where low on-state resistance and fast switching times are required.
  • Amplifier Circuits: Suitable for use in amplifier circuits due to its low noise and high gain characteristics.
  • Logic Circuits: Compatible with logic level signals, making it a good choice for digital logic circuits.
  • Power Management: Can be used in power management circuits to control and regulate power flow efficiently.

Q & A

  1. What is the BSS84PL6433HTMA1?

    The BSS84PL6433HTMA1 is a P-Channel Enhancement Mode Logic Level MOSFET manufactured by Infineon Technologies.

  2. What are the key specifications of the BSS84PL6433HTMA1?

    Key specifications include a drain-source voltage of -20V, gate-source voltage of ±8V, continuous drain current of -0.17A, and on-state drain-source resistance of 85mΩ.

  3. Is the BSS84PL6433HTMA1 still in production?

    No, the BSS84PL6433HTMA1 is currently obsolete and no longer manufactured. Users should consider available substitutes like the BSS84PH6327XTSA2.

  4. What are the typical applications of the BSS84PL6433HTMA1?

    Typical applications include switching circuits, amplifier circuits, logic circuits, and power management circuits.

  5. What are the key features of the BSS84PL6433HTMA1?

    Key features include enhancement mode operation, logic level compatibility, avalanche rating, and dv/dt rating.

  6. What is the junction temperature range of the BSS84PL6433HTMA1?

    The junction temperature range is -55°C to 150°C).

  7. Why is the BSS84PL6433HTMA1 suitable for high-frequency applications?

    It is suitable due to its ability to handle high rates of voltage change (dv/dt rated)).

  8. Can the BSS84PL6433HTMA1 be used in digital logic circuits?
  9. What should users do if they need a replacement for the BSS84PL6433HTMA1?
  10. Where can I find detailed specifications for the BSS84PL6433HTMA1?

    Detailed specifications can be found in the datasheet available from sources like Digi-Key, Mouser, and the official Infineon Technologies website).

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id:2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs:1.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:19 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
462

Please send RFQ , we will respond immediately.

Same Series
BSS84P-E6327
BSS84P-E6327
MOSFET P-CH 60V 170MA SOT23-3
BSS84PL6327HTSA1
BSS84PL6327HTSA1
MOSFET P-CH 60V 170MA SOT23-3
BSS84PL6433HTMA1
BSS84PL6433HTMA1
MOSFET P-CH 60V 170MA SOT23-3

Related Product By Categories

FDD86102LZ
FDD86102LZ
onsemi
MOSFET N-CH 100V 8A/35A DPAK
STD26P3LLH6
STD26P3LLH6
STMicroelectronics
MOSFET P-CH 30V 12A DPAK
IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
STP20NM50
STP20NM50
STMicroelectronics
MOSFET N-CH 500V 20A TO220AB
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
FDMA430NZ
FDMA430NZ
onsemi
MOSFET N-CH 30V 5A 6MICROFET
CSD17575Q3
CSD17575Q3
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
STD4NK60ZT4
STD4NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 4A DPAK
STW45N60DM2AG
STW45N60DM2AG
STMicroelectronics
MOSFET N-CH 600V 34A TO247
STL10N65M2
STL10N65M2
STMicroelectronics
MOSFET N-CH 650V 4.5A POWERFLAT
FQA11N90-F109
FQA11N90-F109
onsemi
MOSFET N-CH 900V 11.4A TO3PN
AO3401AL_DELTA
AO3401AL_DELTA
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V SOT23

Related Product By Brand

BAS16WH6433XTMA1
BAS16WH6433XTMA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
BC846SH6727XTSA1
BC846SH6727XTSA1
Infineon Technologies
TRANS 2NPN 65V 0.1A SOT363
BC807-16WE6327
BC807-16WE6327
Infineon Technologies
TRANS PNP 45V 0.5A SOT23-3
BC860BWE6327
BC860BWE6327
Infineon Technologies
TRANS PNP 45V 0.1A SOT23
BCP53-10E6327
BCP53-10E6327
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
BSC030N08NS5ATMA1
BSC030N08NS5ATMA1
Infineon Technologies
MOSFET N-CH 80V 100A TDSON
IRF7240TRPBF
IRF7240TRPBF
Infineon Technologies
MOSFET P-CH 40V 10.5A 8SO
IRF4905SPBF
IRF4905SPBF
Infineon Technologies
MOSFET P-CH 55V 42A D2PAK
2N7002L6327HTSA1
2N7002L6327HTSA1
Infineon Technologies
MOSFET N-CH 60V 300MA SOT23-3
IKW50N60T
IKW50N60T
Infineon Technologies
IKW50N60 - DISCRETE IGBT WITH AN
BTS5030-2EKA
BTS5030-2EKA
Infineon Technologies
BTS5030 - PROFET - SMART HIGH SI
TLE73682EXUMA1
TLE73682EXUMA1
Infineon Technologies
IC REG AUTO APPL 3OUT DSO-36