BSS84PL6433HTMA1
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Infineon Technologies BSS84PL6433HTMA1

Manufacturer No:
BSS84PL6433HTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 170MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS84PL6433HTMA1 is a discrete semiconductor product manufactured by Infineon Technologies. This component is a P-Channel Enhancement Mode Logic Level MOSFET, designed for small-signal applications. It is notable for its avalanche and dv/dt ratings, making it suitable for a variety of electronic circuits that require high reliability and performance.

However, it is important to note that the BSS84PL6433HTMA1 is currently obsolete and no longer in production. Users are advised to consider available substitutes such as the BSS84PH6327XTSA2 for their design needs.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) -20 V
VGS (Gate-Source Voltage) ±8 V
ID (Continuous Drain Current) -0.17 A
ID,pulse (Pulse Drain Current) -0.34 A
RDS(on) (On-State Drain-Source Resistance) 85
VGS(th) (Threshold Voltage) -0.8 to -3.5 V
TJ (Junction Temperature) -55 to 150 °C

Key Features

  • Enhancement Mode MOSFET: Operates in enhancement mode, requiring a positive gate-source voltage to create a conductive channel.
  • Logic Level: Compatible with logic level signals, making it suitable for use in digital circuits.
  • Avalanche Rated: Designed to withstand high-energy pulses, enhancing reliability in applications where transient voltages may occur.
  • dv/dt Rated: Capable of handling high rates of voltage change, which is crucial in high-frequency applications.
  • Small-Signal Transistor: Optimized for small-signal applications, providing low noise and high fidelity.

Applications

  • Switching Circuits: Used in switching applications where low on-state resistance and fast switching times are required.
  • Amplifier Circuits: Suitable for use in amplifier circuits due to its low noise and high gain characteristics.
  • Logic Circuits: Compatible with logic level signals, making it a good choice for digital logic circuits.
  • Power Management: Can be used in power management circuits to control and regulate power flow efficiently.

Q & A

  1. What is the BSS84PL6433HTMA1?

    The BSS84PL6433HTMA1 is a P-Channel Enhancement Mode Logic Level MOSFET manufactured by Infineon Technologies.

  2. What are the key specifications of the BSS84PL6433HTMA1?

    Key specifications include a drain-source voltage of -20V, gate-source voltage of ±8V, continuous drain current of -0.17A, and on-state drain-source resistance of 85mΩ.

  3. Is the BSS84PL6433HTMA1 still in production?

    No, the BSS84PL6433HTMA1 is currently obsolete and no longer manufactured. Users should consider available substitutes like the BSS84PH6327XTSA2.

  4. What are the typical applications of the BSS84PL6433HTMA1?

    Typical applications include switching circuits, amplifier circuits, logic circuits, and power management circuits.

  5. What are the key features of the BSS84PL6433HTMA1?

    Key features include enhancement mode operation, logic level compatibility, avalanche rating, and dv/dt rating.

  6. What is the junction temperature range of the BSS84PL6433HTMA1?

    The junction temperature range is -55°C to 150°C).

  7. Why is the BSS84PL6433HTMA1 suitable for high-frequency applications?

    It is suitable due to its ability to handle high rates of voltage change (dv/dt rated)).

  8. Can the BSS84PL6433HTMA1 be used in digital logic circuits?
  9. What should users do if they need a replacement for the BSS84PL6433HTMA1?
  10. Where can I find detailed specifications for the BSS84PL6433HTMA1?

    Detailed specifications can be found in the datasheet available from sources like Digi-Key, Mouser, and the official Infineon Technologies website).

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id:2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs:1.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:19 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
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