Overview
The IRFB4227PBF is a 200V Single N-Channel StrongIRFET™ Power MOSFET produced by Infineon Technologies. This device is part of the StrongIRFET™ family, which is optimized for low RDS(on) and high current capability. It is ideal for low frequency applications that require performance and ruggedness. The IRFB4227PBF is housed in a TO-220 package, a standard through-hole power package, making it suitable for a wide range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Key Specifications
Parameter | Units | Typical Value | Maximum Value |
---|---|---|---|
VDS(max) | V | 200 | 240 (Avalanche) |
RDS(on) @ 10V | mΩ | 19.7 | - |
ID @ TC = 25°C | A | - | 130 |
ID @ TC = 100°C | A | - | 100 |
IDM Pulsed Drain Current | A | - | 460 |
PD @ TC = 25°C | W | - | 330 |
TJ(max) | °C | - | 175 |
TSTG Storage Temperature Range | °C | -40 to +150 | - |
RθJC Junction-to-Case Thermal Resistance | °C/W | 0.45 | - |
Key Features
- Advanced process technology optimized for low RDS(on) and high current capability.
- Industry standard through-hole power package (TO-220).
- High-current rating and high-current carrying capability package.
- Silicon optimized for applications switching below 100 kHz.
- Softer body-diode compared to previous silicon generation.
- Low QG for fast response and short fall and rise times for fast switching.
- 175°C operating junction temperature for improved ruggedness.
- Repetitive avalanche capability for robustness and reliability.
Applications
- DC motors.
- Battery management systems.
- Inverters.
- DC-DC converters.
- PDP Sustain, Energy Recovery, and Pass Switch applications.
- Class-D audio amplifiers (300W-500W, half-bridge configuration).
Q & A
- What is the maximum drain-to-source voltage (VDS(max)) of the IRFB4227PBF?
The maximum drain-to-source voltage (VDS(max)) is 200V, with an avalanche voltage of 240V.
- What is the typical on-resistance (RDS(on)) of the IRFB4227PBF at 10V gate-to-source voltage?
The typical on-resistance (RDS(on)) at 10V gate-to-source voltage is 19.7 mΩ.
- What is the maximum continuous drain current (ID) at 25°C and 100°C?
The maximum continuous drain current (ID) is 130A at 25°C and 100A at 100°C.
- What is the maximum junction temperature (TJ(max)) of the IRFB4227PBF?
The maximum junction temperature (TJ(max)) is 175°C.
- What are the typical applications for the IRFB4227PBF?
The IRFB4227PBF is typically used in DC motors, battery management systems, inverters, DC-DC converters, and PDP Sustain, Energy Recovery, and Pass Switch applications.
- What is the thermal resistance from junction to case (RθJC) for the IRFB4227PBF?
The thermal resistance from junction to case (RθJC) is 0.45 °C/W.
- Does the IRFB4227PBF have repetitive avalanche capability?
Yes, the IRFB4227PBF has repetitive avalanche capability for robustness and reliability.
- What is the storage temperature range for the IRFB4227PBF?
The storage temperature range is -40°C to +150°C.
- Is the IRFB4227PBF suitable for high-frequency applications?
No, the IRFB4227PBF is optimized for low frequency applications switching below 100 kHz.
- What is the package type of the IRFB4227PBF?
The IRFB4227PBF is housed in a TO-220 package.