IRFB4227PBF
  • Share:

Infineon Technologies IRFB4227PBF

Manufacturer No:
IRFB4227PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET N-CH 200V 65A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRFB4227PBF is a 200V Single N-Channel StrongIRFET™ Power MOSFET produced by Infineon Technologies. This device is part of the StrongIRFET™ family, which is optimized for low RDS(on) and high current capability. It is ideal for low frequency applications that require performance and ruggedness. The IRFB4227PBF is housed in a TO-220 package, a standard through-hole power package, making it suitable for a wide range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Key Specifications

Parameter Units Typical Value Maximum Value
VDS(max) V 200 240 (Avalanche)
RDS(on) @ 10V 19.7 -
ID @ TC = 25°C A - 130
ID @ TC = 100°C A - 100
IDM Pulsed Drain Current A - 460
PD @ TC = 25°C W - 330
TJ(max) °C - 175
TSTG Storage Temperature Range °C -40 to +150 -
RθJC Junction-to-Case Thermal Resistance °C/W 0.45 -

Key Features

  • Advanced process technology optimized for low RDS(on) and high current capability.
  • Industry standard through-hole power package (TO-220).
  • High-current rating and high-current carrying capability package.
  • Silicon optimized for applications switching below 100 kHz.
  • Softer body-diode compared to previous silicon generation.
  • Low QG for fast response and short fall and rise times for fast switching.
  • 175°C operating junction temperature for improved ruggedness.
  • Repetitive avalanche capability for robustness and reliability.

Applications

  • DC motors.
  • Battery management systems.
  • Inverters.
  • DC-DC converters.
  • PDP Sustain, Energy Recovery, and Pass Switch applications.
  • Class-D audio amplifiers (300W-500W, half-bridge configuration).

Q & A

  1. What is the maximum drain-to-source voltage (VDS(max)) of the IRFB4227PBF?

    The maximum drain-to-source voltage (VDS(max)) is 200V, with an avalanche voltage of 240V.

  2. What is the typical on-resistance (RDS(on)) of the IRFB4227PBF at 10V gate-to-source voltage?

    The typical on-resistance (RDS(on)) at 10V gate-to-source voltage is 19.7 mΩ.

  3. What is the maximum continuous drain current (ID) at 25°C and 100°C?

    The maximum continuous drain current (ID) is 130A at 25°C and 100A at 100°C.

  4. What is the maximum junction temperature (TJ(max)) of the IRFB4227PBF?

    The maximum junction temperature (TJ(max)) is 175°C.

  5. What are the typical applications for the IRFB4227PBF?

    The IRFB4227PBF is typically used in DC motors, battery management systems, inverters, DC-DC converters, and PDP Sustain, Energy Recovery, and Pass Switch applications.

  6. What is the thermal resistance from junction to case (RθJC) for the IRFB4227PBF?

    The thermal resistance from junction to case (RθJC) is 0.45 °C/W.

  7. Does the IRFB4227PBF have repetitive avalanche capability?

    Yes, the IRFB4227PBF has repetitive avalanche capability for robustness and reliability.

  8. What is the storage temperature range for the IRFB4227PBF?

    The storage temperature range is -40°C to +150°C.

  9. Is the IRFB4227PBF suitable for high-frequency applications?

    No, the IRFB4227PBF is optimized for low frequency applications switching below 100 kHz.

  10. What is the package type of the IRFB4227PBF?

    The IRFB4227PBF is housed in a TO-220 package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:65A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:24mOhm @ 46A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:98 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4600 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):330W (Tc)
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$3.79
187

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRFB4227PBF IRFB4228PBF IRFB4229PBF IRFB4127PBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 150 V 250 V 200 V
Current - Continuous Drain (Id) @ 25°C 65A (Tc) 83A (Tc) 46A (Tc) 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 46A, 10V 15mOhm @ 33A, 10V 46mOhm @ 26A, 10V 20mOhm @ 44A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 98 nC @ 10 V 107 nC @ 10 V 110 nC @ 10 V 150 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4600 pF @ 25 V 4530 pF @ 25 V 4560 pF @ 25 V 5380 pF @ 50 V
FET Feature - - - -
Power Dissipation (Max) 330W (Tc) 330W (Tc) 330W (Tc) 375W (Tc)
Operating Temperature -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
AO3407A
AO3407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.3A SOT23-3L
NTLJF4156NT1G
NTLJF4156NT1G
onsemi
MOSFET N-CH 30V 2.5A 6WDFN
FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
STD5N52U
STD5N52U
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
NTMFS4C03NT1G
NTMFS4C03NT1G
onsemi
MOSFET N-CH 30V 30A/136A 5DFN
FCPF1300N80Z
FCPF1300N80Z
onsemi
MOSFET N-CH 800V 4A TO220F
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
PMZB290UNE,315
PMZB290UNE,315
NXP USA Inc.
MOSFET N-CH 20V 1A DFN1006B-3
NTMFS4834NT1G
NTMFS4834NT1G
onsemi
MOSFET N-CH 30V 13A/130A 5DFN

Related Product By Brand

BAS16B5003
BAS16B5003
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BC817K25E6327HTSA1
BC817K25E6327HTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
BC860BE6327
BC860BE6327
Infineon Technologies
TRANS PNP 45V 0.1A SOT23-3
BCX5310E6327
BCX5310E6327
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
BCX5316E6433HTMA1
BCX5316E6433HTMA1
Infineon Technologies
TRANS PNP 80V 1A SOT89
IPG20N04S4L08AATMA1
IPG20N04S4L08AATMA1
Infineon Technologies
MOSFET 2N-CH 40V 20A 8TDSON
IRLML5203TRPBF
IRLML5203TRPBF
Infineon Technologies
MOSFET P-CH 30V 3A MICRO3/SOT23
BSC016N06NSATMA1
BSC016N06NSATMA1
Infineon Technologies
MOSFET N-CH 60V 30A/100A TDSON
FF600R12ME4PBOSA1
FF600R12ME4PBOSA1
Infineon Technologies
IGBT MODULE VCES 600V 600A
IKW50N60TAFKSA1
IKW50N60TAFKSA1
Infineon Technologies
IGBT TRENCH/FS 600V 80A TO247-3
IRS2092STRPBF
IRS2092STRPBF
Infineon Technologies
IC AMP CLASS D MONO 16SOIC
BTS72002EPAXUMA1
BTS72002EPAXUMA1
Infineon Technologies
IC PWR SWTCH N-CHAN 1:1 TSDSO-14