IRFB4227PBF
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Infineon Technologies IRFB4227PBF

Manufacturer No:
IRFB4227PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET N-CH 200V 65A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRFB4227PBF is a 200V Single N-Channel StrongIRFET™ Power MOSFET produced by Infineon Technologies. This device is part of the StrongIRFET™ family, which is optimized for low RDS(on) and high current capability. It is ideal for low frequency applications that require performance and ruggedness. The IRFB4227PBF is housed in a TO-220 package, a standard through-hole power package, making it suitable for a wide range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Key Specifications

Parameter Units Typical Value Maximum Value
VDS(max) V 200 240 (Avalanche)
RDS(on) @ 10V 19.7 -
ID @ TC = 25°C A - 130
ID @ TC = 100°C A - 100
IDM Pulsed Drain Current A - 460
PD @ TC = 25°C W - 330
TJ(max) °C - 175
TSTG Storage Temperature Range °C -40 to +150 -
RθJC Junction-to-Case Thermal Resistance °C/W 0.45 -

Key Features

  • Advanced process technology optimized for low RDS(on) and high current capability.
  • Industry standard through-hole power package (TO-220).
  • High-current rating and high-current carrying capability package.
  • Silicon optimized for applications switching below 100 kHz.
  • Softer body-diode compared to previous silicon generation.
  • Low QG for fast response and short fall and rise times for fast switching.
  • 175°C operating junction temperature for improved ruggedness.
  • Repetitive avalanche capability for robustness and reliability.

Applications

  • DC motors.
  • Battery management systems.
  • Inverters.
  • DC-DC converters.
  • PDP Sustain, Energy Recovery, and Pass Switch applications.
  • Class-D audio amplifiers (300W-500W, half-bridge configuration).

Q & A

  1. What is the maximum drain-to-source voltage (VDS(max)) of the IRFB4227PBF?

    The maximum drain-to-source voltage (VDS(max)) is 200V, with an avalanche voltage of 240V.

  2. What is the typical on-resistance (RDS(on)) of the IRFB4227PBF at 10V gate-to-source voltage?

    The typical on-resistance (RDS(on)) at 10V gate-to-source voltage is 19.7 mΩ.

  3. What is the maximum continuous drain current (ID) at 25°C and 100°C?

    The maximum continuous drain current (ID) is 130A at 25°C and 100A at 100°C.

  4. What is the maximum junction temperature (TJ(max)) of the IRFB4227PBF?

    The maximum junction temperature (TJ(max)) is 175°C.

  5. What are the typical applications for the IRFB4227PBF?

    The IRFB4227PBF is typically used in DC motors, battery management systems, inverters, DC-DC converters, and PDP Sustain, Energy Recovery, and Pass Switch applications.

  6. What is the thermal resistance from junction to case (RθJC) for the IRFB4227PBF?

    The thermal resistance from junction to case (RθJC) is 0.45 °C/W.

  7. Does the IRFB4227PBF have repetitive avalanche capability?

    Yes, the IRFB4227PBF has repetitive avalanche capability for robustness and reliability.

  8. What is the storage temperature range for the IRFB4227PBF?

    The storage temperature range is -40°C to +150°C.

  9. Is the IRFB4227PBF suitable for high-frequency applications?

    No, the IRFB4227PBF is optimized for low frequency applications switching below 100 kHz.

  10. What is the package type of the IRFB4227PBF?

    The IRFB4227PBF is housed in a TO-220 package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:65A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:24mOhm @ 46A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:98 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4600 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):330W (Tc)
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number IRFB4227PBF IRFB4228PBF IRFB4229PBF IRFB4127PBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 150 V 250 V 200 V
Current - Continuous Drain (Id) @ 25°C 65A (Tc) 83A (Tc) 46A (Tc) 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 46A, 10V 15mOhm @ 33A, 10V 46mOhm @ 26A, 10V 20mOhm @ 44A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 98 nC @ 10 V 107 nC @ 10 V 110 nC @ 10 V 150 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4600 pF @ 25 V 4530 pF @ 25 V 4560 pF @ 25 V 5380 pF @ 50 V
FET Feature - - - -
Power Dissipation (Max) 330W (Tc) 330W (Tc) 330W (Tc) 375W (Tc)
Operating Temperature -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3

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