FF600R12ME4CB11BOSA1
  • Share:

Infineon Technologies FF600R12ME4CB11BOSA1

Manufacturer No:
FF600R12ME4CB11BOSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
IGBT MOD 1200V 1060A 4050W
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FF600R12ME4CB11BOSA1 is a high-performance dual IGBT module produced by Infineon Technologies. This module is part of the EconoDUAL™ 3 series, designed for industrial applications requiring high power and reliability. It features TRENCHSTOP™ IGBT4 technology, an emitter-controlled diode, and an integrated NTC (Negative Temperature Coefficient) thermistor. The module is optimized for applications up to 1200 V and 600 A, making it suitable for various high-power converter systems.

Key Specifications

Parameter Symbol Note or Test Condition Values Unit
Collector-emitter voltage VCES Tvj = 25 °C 1200 V
Continuous DC collector current ICDC Tvj max = 175 °C, TC = 100 °C 600 A
Repetitive peak collector current ICRM tp limited by Tvj op 1200 A
Gate-emitter peak voltage VGES ±20 V
Collector-emitter saturation voltage VCE sat IC = 600 A, VGE = 15 V, Tvj = 25 °C 1.75 - 2.10 V
Collector-emitter saturation voltage VCE sat IC = 600 A, VGE = 15 V, Tvj = 125 °C 2.00 V
Collector-emitter saturation voltage VCE sat IC = 600 A, VGE = 15 V, Tvj = 150 °C 2.05 V
Operating junction temperature Tvj op -40 to 150 °C
Weight 345 g

Key Features

  • Low VCE sat: The module features low collector-emitter saturation voltage, which enhances efficiency and reduces power losses.
  • High Power Density: Designed with high power density, this module is ideal for applications where space is limited.
  • Isolated Base Plate: The module has an isolated base plate, ensuring electrical isolation and safety.
  • Standard Housing: It uses a standard EconoDUAL™ 3 housing, making it compatible with existing system designs.
  • VCE sat with Positive Temperature Coefficient: The collector-emitter saturation voltage has a positive temperature coefficient, which helps in paralleling multiple modules.
  • Compact Modules: The design is compact and does not require plugs and cables, making it ideal for low inductive system designs.
  • Easy and Reliable Assembly: The module is designed for easy and reliable assembly, reducing the complexity of system integration.

Applications

  • High-Power Converters: Suitable for high-power converter systems due to its high voltage and current ratings.
  • Motor Drives: Ideal for motor drive applications requiring high power and efficiency.
  • Servo Drives: Used in servo drive systems for precise control and high reliability.
  • UPS Systems: Applicable in uninterruptible power supply (UPS) systems for reliable power backup.
  • Wind Turbines: Used in wind turbine systems for efficient power conversion and control.

Q & A

  1. What is the maximum collector-emitter voltage of the FF600R12ME4 module?

    The maximum collector-emitter voltage (VCES) is 1200 V.

  2. What is the continuous DC collector current rating of the module?

    The continuous DC collector current (ICDC) is 600 A at a maximum junction temperature of 175 °C and case temperature of 100 °C.

  3. What is the repetitive peak collector current of the module?

    The repetitive peak collector current (ICRM) is 1200 A, limited by the operating junction temperature.

  4. What is the gate-emitter peak voltage of the module?

    The gate-emitter peak voltage (VGES) is ±20 V.

  5. What is the operating junction temperature range of the module?

    The operating junction temperature range is -40 to 150 °C.

  6. What are the key features of the FF600R12ME4 module?

    The key features include low VCE sat, high power density, isolated base plate, standard housing, and VCE sat with a positive temperature coefficient.

  7. What are the typical applications of the FF600R12ME4 module?

    The module is typically used in high-power converters, motor drives, servo drives, UPS systems, and wind turbines.

  8. Is the FF600R12ME4 module qualified for industrial applications?

    Yes, the module is qualified for industrial applications according to the relevant tests of IEC 60747, 60749, and 60068.

  9. What is the weight of the FF600R12ME4 module?

    The weight of the module is 345 grams.

  10. Does the module require any special assembly procedures?

    No, the module is designed for easy and reliable assembly without the need for plugs and cables.

Product Attributes

IGBT Type:Trench Field Stop
Configuration:2 Independent
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):1060 A
Power - Max:4050 W
Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 600A
Current - Collector Cutoff (Max):3 mA
Input Capacitance (Cies) @ Vce:37 nF @ 25 V
Input:Standard
NTC Thermistor:Yes
Operating Temperature:-40°C ~ 150°C
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
0 Remaining View Similar

In Stock

-
555

Please send RFQ , we will respond immediately.

Same Series
FF600R12ME4CBOSA1
FF600R12ME4CBOSA1
IGBT MOD 1200V 1060A 4050W
FF600R12ME4CPB11BPSA1
FF600R12ME4CPB11BPSA1
IGBT MODULE VCES 600V 600A
FF600R12ME4CB11BOSA1
FF600R12ME4CB11BOSA1
IGBT MOD 1200V 1060A 4050W

Similar Products

Part Number FF600R12ME4CB11BOSA1 FF600R12ME4EB11BOSA1 FF600R12ME4PB11BOSA1 FF600R12ME4AB11BOSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Discontinued at Digi-Key Not For New Designs Discontinued at Digi-Key
IGBT Type Trench Field Stop Trench Field Stop - Trench Field Stop
Configuration 2 Independent Half Bridge - 2 Independent
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V - 1200 V
Current - Collector (Ic) (Max) 1060 A 995 A - -
Power - Max 4050 W 4050 W - 3350 W
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 600A 2.1V @ 15V, 600A - 2.1V @ 15V, 600A
Current - Collector Cutoff (Max) 3 mA 3 mA - 3 mA
Input Capacitance (Cies) @ Vce 37 nF @ 25 V 37 nF @ 25 V - 37 nF @ 25 V
Input Standard Standard - Standard
NTC Thermistor Yes Yes - Yes
Operating Temperature -40°C ~ 150°C -40°C ~ 150°C - -40°C ~ 150°C
Mounting Type Chassis Mount Chassis Mount - Chassis Mount
Package / Case Module Module - Module
Supplier Device Package Module Module - Module

Related Product By Categories

FF600R12ME4BOSA1
FF600R12ME4BOSA1
Infineon Technologies
IGBT MODULE 1200V 4050W
FF600R12ME4EB11BOSA1
FF600R12ME4EB11BOSA1
Infineon Technologies
IGBT MOD 1200V 995A 4050W
A1C15S12M3
A1C15S12M3
STMicroelectronics
IGBT MOD 1200V 15A ACEPACK1
FF600R12ME4WB73BPSA1
FF600R12ME4WB73BPSA1
Infineon Technologies
MEDIUM POWER ECONO
NXH240B120H3Q1PG
NXH240B120H3Q1PG
onsemi
PIM Q1 3 CHANNEL IGBT+SIC BOOST
FF600R12ME4B11BPSA2
FF600R12ME4B11BPSA2
Infineon Technologies
MEDIUM POWER ECONO AG-ECONOD-411
FF600R12ME4PBOSA1
FF600R12ME4PBOSA1
Infineon Technologies
IGBT MODULE VCES 600V 600A
FF600R12ME4PB11BOSA1
FF600R12ME4PB11BOSA1
Infineon Technologies
IGBT MODULE VCES 600V 600A
FF600R12ME4CB11BPSA1
FF600R12ME4CB11BPSA1
Infineon Technologies
MEDIUM POWER ECONO AG-ECONOD-411
FF600R12ME4AB11BPSA1
FF600R12ME4AB11BPSA1
Infineon Technologies
MEDIUM POWER ECONO AG-ECONOD-411
FF600R12ME4CB11BOSA1
FF600R12ME4CB11BOSA1
Infineon Technologies
IGBT MOD 1200V 1060A 4050W
A1C15S12M3-F
A1C15S12M3-F
STMicroelectronics
IGBT MOD 1200V 15A ACEPACK1

Related Product By Brand

BAS21UE6327HTSA1
BAS21UE6327HTSA1
Infineon Technologies
DIODE ARRAY GP 200V 250MA SC74-6
BAS4007WE6327BTSA1
BAS4007WE6327BTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT343
BAV70WE6327BTSA1
BAV70WE6327BTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323
BAT54B5003
BAT54B5003
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BC817UPNB6327XT
BC817UPNB6327XT
Infineon Technologies
TRANS NPN/PNP 45V 0.5A SC74-6
BC847SH6827XTSA1
BC847SH6827XTSA1
Infineon Technologies
TRANS 2NPN 45V 0.1A SOT363
BC 846B B5003
BC 846B B5003
Infineon Technologies
TRANS NPN 65V 0.1A SOT23
BC817K40E6359HTMA1
BC817K40E6359HTMA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
IRLML9301TRPBF
IRLML9301TRPBF
Infineon Technologies
MOSFET P-CH 30V 3.6A SOT23
BSS138W L6327
BSS138W L6327
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
IRLML6402TRPBF-1
IRLML6402TRPBF-1
Infineon Technologies
MOSFET P-CH 20V 3.7A SOT23