FF600R12ME4CBOSA1
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Infineon Technologies FF600R12ME4CBOSA1

Manufacturer No:
FF600R12ME4CBOSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
IGBT MOD 1200V 1060A 4050W
Delivery:
Payment:
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Product Introduction

Overview

The FF600R12ME4CBOSA1 is a dual IGBT4 - E4 module produced by Infineon Technologies, housed in the EconoDUAL™ 3 package. This module is designed for high-power industrial applications, featuring TRENCHSTOP™ IGBT4 technology, an emitter-controlled diode, and an NTC (Negative Temperature Coefficient) thermistor. It is optimized for high power density and reliability, making it suitable for various demanding industrial uses.

Key Specifications

Parameter Symbol Note or Test Condition Values Unit
Collector-emitter voltage VCES Tvj = 25 °C 1200 V
Continuous DC collector current ICDC Tvj max = 175 °C, TC = 100 °C 600 A
Repetitive peak collector current ICRM tp limited by Tvj op 1200 A
Gate-emitter peak voltage VGES ±20 V
Collector-emitter saturation voltage VCE sat IC = 600 A, VGE = 15 V, Tvj = 25 °C 1.75 - 2.10 V
Collector-emitter saturation voltage VCE sat IC = 600 A, VGE = 15 V, Tvj = 125 °C 2.00 V
Collector-emitter saturation voltage VCE sat IC = 600 A, VGE = 15 V, Tvj = 150 °C 2.05 V
Operating junction temperature Tvj op 150 °C
Weight 345 g

Key Features

  • Low VCE sat: The module features low collector-emitter saturation voltage, enhancing efficiency in high-power applications.
  • Tvj op = 150°C: The module can operate at a junction temperature of up to 150°C, ensuring reliability in demanding environments.
  • VCE sat with positive temperature coefficient: This feature helps in preventing thermal runaway and ensures stable operation over a wide temperature range.
  • High power density: The EconoDUAL™ 3 housing provides a compact and high-power density solution, ideal for space-constrained applications.
  • Isolated base plate: Ensures electrical isolation and enhances the module's reliability and safety.
  • Standard housing: The module uses a standard housing, making it compatible with various system designs.
  • PressFIT Contact Technology: Offers easy and reliable assembly without the need for soldering or additional connectors.

Applications

  • High-power converters: Suitable for high-power conversion applications requiring high reliability and efficiency.
  • Motor drives: Ideal for motor drive systems that demand high power density and low losses.
  • Servo drives: Used in servo drive applications where precise control and high power are necessary.
  • UPS systems: Employed in uninterruptible power supply systems to ensure reliable and efficient power delivery.
  • Wind turbines: Utilized in wind turbine systems for high-power conversion and control.

Q & A

  1. What is the maximum collector-emitter voltage of the FF600R12ME4CBOSA1 module?

    The maximum collector-emitter voltage (VCES) is 1200 V.

  2. What is the continuous DC collector current rating of the module?

    The continuous DC collector current (ICDC) is 600 A at a maximum junction temperature of 175 °C and case temperature of 100 °C.

  3. What is the repetitive peak collector current of the module?

    The repetitive peak collector current (ICRM) is 1200 A, limited by the operating junction temperature.

  4. What is the operating junction temperature of the module?

    The operating junction temperature (Tvj op) is up to 150 °C.

  5. What are the key features of the FF600R12ME4CBOSA1 module?

    The key features include low VCE sat, high power density, isolated base plate, standard housing, and VCE sat with a positive temperature coefficient.

  6. What applications is the FF600R12ME4CBOSA1 module suitable for?

    The module is suitable for high-power converters, motor drives, servo drives, UPS systems, and wind turbines.

  7. What is the weight of the FF600R12ME4CBOSA1 module?

    The weight of the module is 345 grams.

  8. Does the module use PressFIT Contact Technology?

    Yes, the module uses PressFIT Contact Technology for easy and reliable assembly.

  9. Is the base plate of the module isolated?

    Yes, the base plate of the module is isolated, ensuring electrical isolation and enhancing reliability.

  10. What is the gate-emitter peak voltage rating of the module?

    The gate-emitter peak voltage (VGES) is ±20 V.

Product Attributes

IGBT Type:Trench Field Stop
Configuration:Half Bridge
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):1060 A
Power - Max:4050 W
Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 600A
Current - Collector Cutoff (Max):3 mA
Input Capacitance (Cies) @ Vce:37 nF @ 25 V
Input:Standard
NTC Thermistor:Yes
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
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$390.00
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Similar Products

Part Number FF600R12ME4CBOSA1 FF600R12ME4PBOSA1 FF600R12ME4BOSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs Not For New Designs
IGBT Type Trench Field Stop - Trench Field Stop
Configuration Half Bridge - 2 Independent
Voltage - Collector Emitter Breakdown (Max) 1200 V - 1200 V
Current - Collector (Ic) (Max) 1060 A - -
Power - Max 4050 W - 4050 W
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 600A - 2.1V @ 15V, 600A
Current - Collector Cutoff (Max) 3 mA - 3 mA
Input Capacitance (Cies) @ Vce 37 nF @ 25 V - 37 nF @ 25 V
Input Standard - Standard
NTC Thermistor Yes - Yes
Operating Temperature -40°C ~ 150°C (TJ) - -40°C ~ 150°C
Mounting Type Chassis Mount - Chassis Mount
Package / Case Module - Module
Supplier Device Package Module - Module

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