BSC0702LSATMA1
  • Share:

Infineon Technologies BSC0702LSATMA1

Manufacturer No:
BSC0702LSATMA1
Manufacturer:
Infineon Technologies
Package:
Cut Tape (CT)
Description:
MOSFET N-CH 60V 100A SUPERSO8
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSC0702LSATMA1 is a high-performance OptiMOS™ PD power MOSFET produced by Infineon Technologies. This device is part of Infineon's portfolio targeting USB-PD and adapter applications, offering advanced SGT MOSFET technology. It is designed to provide fast ramp-up and optimized lead times, making it ideal for high-frequency switching applications.

Key Specifications

ParameterValue
Voltage Rating (V_DS)60 V
Current Rating (I_D)70 A
Thermal Resistance Junction-Ambient (RθJA)1.39 ℃/W
Package TypeTOSA (TO-263)
Avalanche Tested100% avalanche tested

Key Features

  • Ideal for high-frequency switching applications
  • Optimized for chargers and adapter applications
  • 100% avalanche tested for reliability
  • Fast ramp-up and optimized lead times
  • Advanced SGT MOSFET technology for improved performance

Applications

The BSC0702LSATMA1 is primarily used in USB-PD and adapter applications, including but not limited to:

  • High-power chargers
  • Power adapters
  • Switch-mode power supplies
  • High-frequency switching circuits

Q & A

  1. What is the voltage rating of the BSC0702LSATMA1? The voltage rating is 60 V.
  2. What is the current rating of the BSC0702LSATMA1? The current rating is 70 A.
  3. What is the thermal resistance junction-ambient of the BSC0702LSATMA1? The thermal resistance junction-ambient is 1.39 ℃/W.
  4. What package type does the BSC0702LSATMA1 use? The package type is TOSA (TO-263).
  5. Is the BSC0702LSATMA1 avalanche tested? Yes, it is 100% avalanche tested.
  6. What are the primary applications of the BSC0702LSATMA1? The primary applications include USB-PD, chargers, and adapter applications.
  7. What technology does the BSC0702LSATMA1 use? It uses advanced SGT MOSFET technology.
  8. Why is the BSC0702LSATMA1 suitable for high-frequency switching? It is optimized for high-frequency switching due to its advanced technology and design.
  9. Where can I find detailed specifications for the BSC0702LSATMA1? Detailed specifications can be found in the datasheet available on Infineon's official website and other electronic component suppliers like Digi-Key and Farnell.
  10. What are the benefits of using the BSC0702LSATMA1 in power supplies? It offers fast ramp-up, optimized lead times, and high reliability, making it beneficial for power supply applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.3V @ 49µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4400 pF @ 30 V
FET Feature:Standard
Power Dissipation (Max):83W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$1.86
18

Please send RFQ , we will respond immediately.

Same Series
RD15S10H00/AA
RD15S10H00/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20LV50/AA
DD15S20LV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HE2X/AA
CBC9W4S10HE2X/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20Z00
DD15S20Z00
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10H00/AA
CBC13W3S10H00/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S200V5S
DD15S200V5S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10H0S/AA
CBC9W4S10H0S/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20J0S
DD15S20J0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S0T0
DD26S2S0T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V5X
DD26S2S50V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20W00
DD26S20W00
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0V3X/AA
DD44S32S0V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BSC0702LSATMA1 BSC0704LSATMA1 BSC0703LSATMA1 BSC0802LSATMA1 BSC0302LSATMA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Active Active Not For New Designs Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 100 V 120 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 11A (Ta), 47A (Tc) 15A (Ta), 64A (Tc) 20A (Ta), 100A (Tc) 12A (Ta), 99A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.3mOhm @ 50A, 10V 9.4mOhm @ 24A, 10V 6.5mOhm @ 32A, 10V 3.4mOhm @ 50A, 10V 8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.3V @ 49µA 2.3V @ 14µA 2.3V @ 20µA 2.3V @ 115µA 2.4V @ 112µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 4.5 V 9.4 nC @ 4.5 V 13 nC @ 4.5 V 46 nC @ 4.5 V 79 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4400 pF @ 30 V 1300 pF @ 30 V 1800 pF @ 30 V 6500 pF @ 50 V 7400 pF @ 60 V
FET Feature Standard - - - -
Power Dissipation (Max) 83W (Tc) 2.1W (Ta), 36W (Tc) 2.5W (Ta), 46W (Tc) 156W (Tc) 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8 PG-TDSON-8-6 PG-TDSON-8-6 PG-TDSON-8-7 PG-TDSON-8-7
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

FDB38N30U
FDB38N30U
onsemi
MOSFET N CH 300V 38A D2PAK
PSMN4R0-30YLDX
PSMN4R0-30YLDX
Nexperia USA Inc.
MOSFET N-CH 30V 95A LFPAK56
CSD17575Q3T
CSD17575Q3T
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
CSD18534Q5AT
CSD18534Q5AT
Texas Instruments
MOSFET N-CHANNEL 60V 50A 8VSON
STD2NK100Z
STD2NK100Z
STMicroelectronics
MOSFET N-CH 1000V 1.85A DPAK
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
NTLUS3A18PZTAG
NTLUS3A18PZTAG
onsemi
MOSFET P-CH 20V 5.1A 6UDFN
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
BSN20BK215
BSN20BK215
Nexperia USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
STL10N65M2
STL10N65M2
STMicroelectronics
MOSFET N-CH 650V 4.5A POWERFLAT
NTMFS5C612NLT1G
NTMFS5C612NLT1G
onsemi
MOSFET N-CH 60V 36A/235A 5DFN
STF38N65M5
STF38N65M5
STMicroelectronics
MOSFET N-CH 650V 30A TO220FP

Related Product By Brand

BAV74E6327
BAV74E6327
Infineon Technologies
RECTIFIER DIODE
BAS28
BAS28
Infineon Technologies
SWITCHING DIODE ARRAY
BAS4007WE6327BTSA1
BAS4007WE6327BTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT343
BAS16E6393HTSA1
BAS16E6393HTSA1
Infineon Technologies
DIODE GP 80V 250MA SOT23-3
BC846AE6433
BC846AE6433
Infineon Technologies
TRANS NPN 45V 0.1A SOT23
BC807-16WE6327
BC807-16WE6327
Infineon Technologies
TRANS PNP 45V 0.5A SOT23-3
BCX5310E6327
BCX5310E6327
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
BC848B-E6327
BC848B-E6327
Infineon Technologies
TRANS NPN 30V 0.1A SOT23
BC80740WE6327BTSA1
BC80740WE6327BTSA1
Infineon Technologies
TRANS PNP 45V 0.5A SOT323
BSS138WH6433XTMA1
BSS138WH6433XTMA1
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
IRF4905SPBF
IRF4905SPBF
Infineon Technologies
MOSFET P-CH 55V 42A D2PAK
BSP75NNT
BSP75NNT
Infineon Technologies
IC PWR DRVR N-CHAN 1:1 SOT223-4