BSC0702LSATMA1
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Infineon Technologies BSC0702LSATMA1

Manufacturer No:
BSC0702LSATMA1
Manufacturer:
Infineon Technologies
Package:
Cut Tape (CT)
Description:
MOSFET N-CH 60V 100A SUPERSO8
Delivery:
Payment:
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Product Introduction

Overview

The BSC0702LSATMA1 is a high-performance OptiMOS™ PD power MOSFET produced by Infineon Technologies. This device is part of Infineon's portfolio targeting USB-PD and adapter applications, offering advanced SGT MOSFET technology. It is designed to provide fast ramp-up and optimized lead times, making it ideal for high-frequency switching applications.

Key Specifications

ParameterValue
Voltage Rating (V_DS)60 V
Current Rating (I_D)70 A
Thermal Resistance Junction-Ambient (RθJA)1.39 ℃/W
Package TypeTOSA (TO-263)
Avalanche Tested100% avalanche tested

Key Features

  • Ideal for high-frequency switching applications
  • Optimized for chargers and adapter applications
  • 100% avalanche tested for reliability
  • Fast ramp-up and optimized lead times
  • Advanced SGT MOSFET technology for improved performance

Applications

The BSC0702LSATMA1 is primarily used in USB-PD and adapter applications, including but not limited to:

  • High-power chargers
  • Power adapters
  • Switch-mode power supplies
  • High-frequency switching circuits

Q & A

  1. What is the voltage rating of the BSC0702LSATMA1? The voltage rating is 60 V.
  2. What is the current rating of the BSC0702LSATMA1? The current rating is 70 A.
  3. What is the thermal resistance junction-ambient of the BSC0702LSATMA1? The thermal resistance junction-ambient is 1.39 ℃/W.
  4. What package type does the BSC0702LSATMA1 use? The package type is TOSA (TO-263).
  5. Is the BSC0702LSATMA1 avalanche tested? Yes, it is 100% avalanche tested.
  6. What are the primary applications of the BSC0702LSATMA1? The primary applications include USB-PD, chargers, and adapter applications.
  7. What technology does the BSC0702LSATMA1 use? It uses advanced SGT MOSFET technology.
  8. Why is the BSC0702LSATMA1 suitable for high-frequency switching? It is optimized for high-frequency switching due to its advanced technology and design.
  9. Where can I find detailed specifications for the BSC0702LSATMA1? Detailed specifications can be found in the datasheet available on Infineon's official website and other electronic component suppliers like Digi-Key and Farnell.
  10. What are the benefits of using the BSC0702LSATMA1 in power supplies? It offers fast ramp-up, optimized lead times, and high reliability, making it beneficial for power supply applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.3V @ 49µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4400 pF @ 30 V
FET Feature:Standard
Power Dissipation (Max):83W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8
Package / Case:8-PowerTDFN
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Similar Products

Part Number BSC0702LSATMA1 BSC0704LSATMA1 BSC0703LSATMA1 BSC0802LSATMA1 BSC0302LSATMA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Active Active Not For New Designs Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 100 V 120 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 11A (Ta), 47A (Tc) 15A (Ta), 64A (Tc) 20A (Ta), 100A (Tc) 12A (Ta), 99A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.3mOhm @ 50A, 10V 9.4mOhm @ 24A, 10V 6.5mOhm @ 32A, 10V 3.4mOhm @ 50A, 10V 8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.3V @ 49µA 2.3V @ 14µA 2.3V @ 20µA 2.3V @ 115µA 2.4V @ 112µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 4.5 V 9.4 nC @ 4.5 V 13 nC @ 4.5 V 46 nC @ 4.5 V 79 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4400 pF @ 30 V 1300 pF @ 30 V 1800 pF @ 30 V 6500 pF @ 50 V 7400 pF @ 60 V
FET Feature Standard - - - -
Power Dissipation (Max) 83W (Tc) 2.1W (Ta), 36W (Tc) 2.5W (Ta), 46W (Tc) 156W (Tc) 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8 PG-TDSON-8-6 PG-TDSON-8-6 PG-TDSON-8-7 PG-TDSON-8-7
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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