BAS4007WH6327
  • Share:

Infineon Technologies BAS4007WH6327

Manufacturer No:
BAS4007WH6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
SCHOTTKY DIODE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS4007WH6327 is a Schottky diode produced by Infineon Technologies. This component is part of Infineon's range of high-performance Schottky diodes, known for their low forward voltage drop and high switching speeds. The BAS4007WH6327 is packaged in a SOT-343-4 configuration, making it suitable for a variety of applications requiring efficient rectification and switching.

Key Specifications

Parameter Value Unit
Package Type SOT-343-4 -
Forward Voltage Drop (V_F) Typically 0.37 V
Reverse Voltage (V_RRM) 40 V
Maximum Continuous Forward Current (I_F) 1 A
Maximum Peak Reverse Current (I_RRM) 1 A
Operating Junction Temperature (T_J) -55 to 150 °C
Storage Temperature (T_STG) -55 to 150 °C
RoHS Compliance Yes -

Key Features

  • Low Forward Voltage Drop: The BAS4007WH6327 features a low forward voltage drop, typically 0.37V, which reduces power losses and improves efficiency in applications.
  • High Switching Speeds: This Schottky diode is designed for high-speed switching applications, making it suitable for use in high-frequency circuits.
  • Compact Package: The SOT-343-4 package is compact and suitable for space-constrained designs, allowing for higher density on PCBs.
  • RoHS Compliance: The component is RoHS compliant, ensuring it meets environmental regulations and is safe for use in a wide range of applications.

Applications

  • Power Supplies: The BAS4007WH6327 is often used in power supply circuits to improve efficiency and reduce heat generation.
  • Switch-Mode Power Supplies (SMPS): Its high switching speeds make it ideal for use in SMPS applications.
  • High-Frequency Circuits: Suitable for use in high-frequency circuits such as RF amplifiers and oscillators.
  • Automotive Electronics: Can be used in automotive electronics due to its robustness and reliability.

Q & A

  1. What is the package type of the BAS4007WH6327?

    The package type of the BAS4007WH6327 is SOT-343-4.

  2. What is the typical forward voltage drop of the BAS4007WH6327?

    The typical forward voltage drop is 0.37V.

  3. What is the maximum continuous forward current of the BAS4007WH6327?

    The maximum continuous forward current is 1A.

  4. Is the BAS4007WH6327 RoHS compliant?

    Yes, the BAS4007WH6327 is RoHS compliant.

  5. What are the typical applications of the BAS4007WH6327?

    The BAS4007WH6327 is typically used in power supplies, switch-mode power supplies (SMPS), high-frequency circuits, and automotive electronics.

  6. What is the operating junction temperature range of the BAS4007WH6327?

    The operating junction temperature range is -55°C to 150°C.

  7. What is the storage temperature range of the BAS4007WH6327?

    The storage temperature range is -55°C to 150°C.

  8. Why is the BAS4007WH6327 preferred in high-frequency circuits?

    The BAS4007WH6327 is preferred in high-frequency circuits due to its high switching speeds and low forward voltage drop.

  9. Can the BAS4007WH6327 be used in automotive applications?

    Yes, the BAS4007WH6327 can be used in automotive applications due to its robustness and reliability.

  10. Where can I find detailed specifications for the BAS4007WH6327?

    Detailed specifications can be found in the datasheet available on Infineon's official website, as well as on distributor websites like Mouser, Digi-Key, and LCSC.

Product Attributes

Diode Configuration:2 Independent
Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io) (per Diode):120mA (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 40 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:1 µA @ 30 V
Operating Temperature - Junction:150°C
Mounting Type:Surface Mount
Package / Case:SC-82A, SOT-343
Supplier Device Package:PG-SOT343-4
0 Remaining View Similar

In Stock

$0.11
1,000

Please send RFQ , we will respond immediately.

Same Series
DD15S2S0V50
DD15S2S0V50
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HV50/AA
RD15S10HV50/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20Z0X/AA
DD15S20Z0X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S20000
DD26S20000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T0
DD26S200T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S500X
DD26S2S500X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F000
DD26S2F000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T20/AA
DD26S2S50T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0T2X
DD44S32S0T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S50V50
DD26S2S50V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WTX
DD26S20WTX
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60V3X/AA
DD44S32S60V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BAS4007WH6327 BAS40-07WH6327
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
Diode Configuration 2 Independent 2 Independent
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 40 V 40 V
Current - Average Rectified (Io) (per Diode) 120mA (DC) 120mA (DC)
Voltage - Forward (Vf) (Max) @ If 1 V @ 40 mA 1 V @ 40 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 1 µA @ 30 V 1 µA @ 30 V
Operating Temperature - Junction 150°C 150°C
Mounting Type Surface Mount Surface Mount
Package / Case SC-82A, SOT-343 SC-82A, SOT-343
Supplier Device Package PG-SOT343-4 PG-SOT343-4

Related Product By Categories

BAW56S,115
BAW56S,115
Nexperia USA Inc.
DIODE ARRAY GP 90V 250MA 6TSSOP
1PS66SB82,115
1PS66SB82,115
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 15V SOT666
BYV44-500,127
BYV44-500,127
WeEn Semiconductors
DIODE ARRAY GP 500V 30A TO220AB
BAS40-05WH6327
BAS40-05WH6327
Infineon Technologies
SCHOTTKY DIODE
BAV70LT3G
BAV70LT3G
onsemi
DIODE ARRAY GP 100V 200MA SOT23
BAT54CQ-13
BAT54CQ-13
Diodes Incorporated
SCHOTTKY DIODE SOT23 T&R 10K
BAV23C-G3-18
BAV23C-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 200MA SOT23
BYV42E-200,127
BYV42E-200,127
WeEn Semiconductors
DIODE ARRAY GP 200V 30A TO220AB
MBRD660CTTR
MBRD660CTTR
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 60V 3A DPAK
MUR3060WT
MUR3060WT
onsemi
DIODE ARRAY GP 600V 15A TO247
MMBD1204_D87Z
MMBD1204_D87Z
onsemi
DIODE ARRAY GP 100V 200MA SOT23
BAV99HMT116
BAV99HMT116
Rohm Semiconductor
PMDU RECTIFYING DIODE

Related Product By Brand

BAS4005E6327HTSA1
BAS4005E6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
BAS40-04B5003
BAS40-04B5003
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BC 856B E6433
BC 856B E6433
Infineon Technologies
TRANS PNP 65V 0.1A SOT23
BC 807-40W H6433
BC 807-40W H6433
Infineon Technologies
TRANS PNP 45V 0.5A SOT323
BCP 54-16 H6778
BCP 54-16 H6778
Infineon Technologies
TRANS NPN 45V 1A SOT223-4
BCP5416E6433HTMA1
BCP5416E6433HTMA1
Infineon Technologies
TRANS NPN 45V 1A SOT223-4
IRLML6346TRPBF
IRLML6346TRPBF
Infineon Technologies
MOSFET N-CH 30V 3.4A SOT23
IRLML5203TRPBF
IRLML5203TRPBF
Infineon Technologies
MOSFET P-CH 30V 3A MICRO3/SOT23
IRFP4668PBF
IRFP4668PBF
Infineon Technologies
MOSFET N-CH 200V 130A TO247AC
IPB072N15N3GE8187ATMA1
IPB072N15N3GE8187ATMA1
Infineon Technologies
MOSFET N-CH 150V 100A TO263-3
IRS44273LTRPBF
IRS44273LTRPBF
Infineon Technologies
IC GATE DRVR LOW-SIDE SOT23-5
S34ML01G100TFI000
S34ML01G100TFI000
Infineon Technologies
IC FLASH 1GBIT PARALLEL 48TSOP I