Overview
The BAV199E6433HTMA1 is a silicon low-leakage diode array manufactured by Infineon Technologies. This component is part of the BAV199 series and is designed for low-leakage applications and medium speed switching times. It is packaged in a SOT23 series package, which is Pb-free and RoHS compliant. The diode array is qualified according to AEC Q101 standards, ensuring reliability and performance in various electronic systems.
Key Specifications
Parameter | Symbol | Value | Unit |
---|---|---|---|
Diode Reverse Voltage | VR | 80 | V |
Peak Reverse Voltage | VRM | 85 | V |
Forward Current | IF | 200 | mA |
Non-repetitive Peak Surge Forward Current | IFSM | 4.5 A (t = 1 µs), 0.5 A (t = 1 s) | A |
Total Power Dissipation | Ptot | 330 mW | mW |
Junction Temperature | Tj | 150 | °C |
Storage Temperature | Tstg | -65 to 150 | °C |
Forward Voltage | VF | 1.25 V (IF = 150 mA) | V |
Diode Capacitance | CT | 2 pF (VR = 0 V, f = 1 MHz) | pF |
Reverse Recovery Time | trr | 0.6 to 1.5 µs | µs |
Key Features
- Low-leakage applications
- Medium speed switching times
- Series pair configuration
- Pb-free (RoHS compliant) package
- Qualified according to AEC Q101 standards
- Low forward voltage drop (VF = 1.25 V at IF = 150 mA)
- Low diode capacitance (CT = 2 pF at VR = 0 V, f = 1 MHz)
- Fast reverse recovery time (trr = 0.6 to 1.5 µs)
Applications
- General-purpose switching and rectification
- Low-leakage applications in automotive and industrial systems
- Medium speed switching circuits
- Power supply and voltage regulation circuits
- Signal processing and protection circuits
Q & A
- What is the maximum reverse voltage for the BAV199E6433HTMA1 diode?
The maximum reverse voltage (VR) is 80 V, with a peak reverse voltage (VRM) of 85 V.
- What is the forward current rating of the BAV199E6433HTMA1?
The forward current (IF) rating is 200 mA.
- What is the junction temperature range for this diode?
The junction temperature (Tj) range is up to 150°C.
- Is the BAV199E6433HTMA1 RoHS compliant?
- What is the typical forward voltage drop for this diode?
The typical forward voltage drop (VF) is 1.25 V at a forward current (IF) of 150 mA.
- What is the diode capacitance of the BAV199E6433HTMA1?
The diode capacitance (CT) is 2 pF at VR = 0 V and f = 1 MHz.
- What is the reverse recovery time of this diode?
The reverse recovery time (trr) is between 0.6 to 1.5 µs).
- What are the storage temperature limits for the BAV199E6433HTMA1?
The storage temperature (Tstg) range is from -65°C to 150°C).
- Is the BAV199E6433HTMA1 qualified according to any specific standards?
- What is the package type of the BAV199E6433HTMA1?
The package type is SOT23 series).