FF600R12ME4AB11BOSA1
  • Share:

Infineon Technologies FF600R12ME4AB11BOSA1

Manufacturer No:
FF600R12ME4AB11BOSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
IGBT MODULE 1200V 3350W
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FF600R12ME4_B11 is a dual IGBT4 module from Infineon Technologies, housed in the EconoDUAL™ 3 package. This module is designed for high-power industrial applications, offering a combination of TRENCHSTOP™ IGBT4, emitter-controlled diode, NTC (Negative Temperature Coefficient) thermistor, and PressFIT contact technology. It is optimized for high power density and reliability, making it suitable for a variety of demanding applications.

Key Specifications

Parameter Symbol Note or Test Condition Values Unit
Collector-emitter voltage VCES Tvj = 25 °C 1200 V
Continuous DC collector current ICDC Tvj max = 175 °C, TC = 100 °C 600 A
Repetitive peak collector current ICRM tp limited by Tvj op 1200 A
Gate-emitter peak voltage VGES ±20 V
Collector-emitter saturation voltage VCE sat IC = 600 A, VGE = 15 V, Tvj = 25 °C 1.75 - 2.10 V
Gate threshold voltage VGEth IC = f(VCE), VGE = 15 V V
Operating junction temperature Tvj op 150 °C

Key Features

  • Low VCE sat: The module features low collector-emitter saturation voltage, enhancing efficiency in high-power applications.
  • High power density: Designed with a high power density, making it ideal for compact system designs.
  • Isolated base plate: Ensures electrical isolation, improving safety and reliability.
  • Standard housing: Uses the standard EconoDUAL™ 3 housing, facilitating easy integration into existing systems.
  • VCE sat with positive temperature coefficient: This feature helps in preventing thermal runaway and ensures stable operation over a wide temperature range.
  • PressFIT contact technology: Offers easy and reliable assembly without the need for soldering or additional connectors.
  • NTC thermistor: Provides temperature monitoring and control, enhancing the module's thermal management capabilities.

Applications

  • High-power converters: Suitable for high-power conversion applications due to its high current and voltage ratings.
  • Motor drives: Ideal for motor drive systems requiring high power density and reliability.
  • Servo drives: Used in servo drive applications where precise control and high power are necessary.
  • UPS systems: Applicable in uninterruptible power supply systems for reliable power backup.
  • Wind turbines: Can be used in wind turbine systems for efficient and reliable power conversion.

Q & A

  1. What is the collector-emitter voltage rating of the FF600R12ME4_B11 module?

    The collector-emitter voltage rating is 1200 V.

  2. What is the continuous DC collector current of the module?

    The continuous DC collector current is 600 A at a maximum junction temperature of 175 °C and case temperature of 100 °C.

  3. What is the repetitive peak collector current of the module?

    The repetitive peak collector current is 1200 A, limited by the operating junction temperature.

  4. What is the gate-emitter peak voltage of the module?

    The gate-emitter peak voltage is ±20 V.

  5. What is the operating junction temperature of the module?

    The operating junction temperature is up to 150 °C.

  6. What are the key features of the FF600R12ME4_B11 module?

    The key features include low VCE sat, high power density, isolated base plate, standard housing, VCE sat with positive temperature coefficient, PressFIT contact technology, and NTC thermistor.

  7. In which applications is the FF600R12ME4_B11 module typically used?

    The module is used in high-power converters, motor drives, servo drives, UPS systems, and wind turbines.

  8. Is the FF600R12ME4_B11 module compliant with any specific standards?

    Yes, it is qualified for industrial applications according to the relevant tests of IEC 60747, 60749, and 60068.

  9. What is the benefit of using PressFIT contact technology in the FF600R12ME4_B11 module?

    The PressFIT contact technology offers easy and reliable assembly without the need for soldering or additional connectors.

  10. How does the NTC thermistor enhance the module's performance?

    The NTC thermistor provides temperature monitoring and control, enhancing the module's thermal management capabilities.

Product Attributes

IGBT Type:Trench Field Stop
Configuration:2 Independent
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):- 
Power - Max:3350 W
Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 600A
Current - Collector Cutoff (Max):3 mA
Input Capacitance (Cies) @ Vce:37 nF @ 25 V
Input:Standard
NTC Thermistor:Yes
Operating Temperature:-40°C ~ 150°C
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
0 Remaining View Similar

In Stock

$380.13
4

Please send RFQ , we will respond immediately.

Same Series
RD15S10HT20/AA
RD15S10HT20/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20JV3S
DD15S20JV3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HV30/AA
DD26M20HV30/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S200T0/AA
DD26S200T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E30
DD26S200E30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0T2X/AA
DD26S2S0T2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50TX/AA
DD26S2S50TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V5X
DD26S2S0V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F000/AA
DD26S2F000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V5X
DD26S200V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V3X
DD26S2S50V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD62M32S0V3S/AA
DD62M32S0V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR

Similar Products

Part Number FF600R12ME4AB11BOSA1 FF600R12ME4EB11BOSA1 FF600R12ME4PB11BOSA1 FF600R12ME4CB11BOSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Discontinued at Digi-Key Not For New Designs Discontinued at Digi-Key
IGBT Type Trench Field Stop Trench Field Stop - Trench Field Stop
Configuration 2 Independent Half Bridge - 2 Independent
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V - 1200 V
Current - Collector (Ic) (Max) - 995 A - 1060 A
Power - Max 3350 W 4050 W - 4050 W
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 600A 2.1V @ 15V, 600A - 2.1V @ 15V, 600A
Current - Collector Cutoff (Max) 3 mA 3 mA - 3 mA
Input Capacitance (Cies) @ Vce 37 nF @ 25 V 37 nF @ 25 V - 37 nF @ 25 V
Input Standard Standard - Standard
NTC Thermistor Yes Yes - Yes
Operating Temperature -40°C ~ 150°C -40°C ~ 150°C - -40°C ~ 150°C
Mounting Type Chassis Mount Chassis Mount - Chassis Mount
Package / Case Module Module - Module
Supplier Device Package Module Module - Module

Related Product By Categories

FF600R12ME4BOSA1
FF600R12ME4BOSA1
Infineon Technologies
IGBT MODULE 1200V 4050W
FS820R08A6P2LBBPSA1
FS820R08A6P2LBBPSA1
Infineon Technologies
IGBT MODULE 820A HYBRID PK DRIVE
FF600R12ME4EB11BOSA1
FF600R12ME4EB11BOSA1
Infineon Technologies
IGBT MOD 1200V 995A 4050W
FF600R12ME4AB11BOSA1
FF600R12ME4AB11BOSA1
Infineon Technologies
IGBT MODULE 1200V 3350W
NXH240B120H3Q1PG
NXH240B120H3Q1PG
onsemi
PIM Q1 3 CHANNEL IGBT+SIC BOOST
FF600R12ME4PB72BPSA1
FF600R12ME4PB72BPSA1
Infineon Technologies
MEDIUM POWER ECONO
FF600R12ME4B11BPSA2
FF600R12ME4B11BPSA2
Infineon Technologies
MEDIUM POWER ECONO AG-ECONOD-411
FF600R12ME4PB11BOSA1
FF600R12ME4PB11BOSA1
Infineon Technologies
IGBT MODULE VCES 600V 600A
FF600R12ME4CPBPSA1
FF600R12ME4CPBPSA1
Infineon Technologies
IGBT MODULE VCES 600V 600A
FF600R12ME4CPB11BPSA1
FF600R12ME4CPB11BPSA1
Infineon Technologies
IGBT MODULE VCES 600V 600A
FF600R12ME4B11BPSA1
FF600R12ME4B11BPSA1
Infineon Technologies
FF600R12 - IGBT MODULE
FF600R12ME4B73BPSA1
FF600R12ME4B73BPSA1
Infineon Technologies
IGBT MOD 1200V 1200A 20MW

Related Product By Brand

BAV70E6767
BAV70E6767
Infineon Technologies
GENERAL PURPOSE HIGH SPEED SWITC
BAS 40 B5003
BAS 40 B5003
Infineon Technologies
DIODE SCHOTTKY 40V 120MA SOT23-3
BC856A-E6327
BC856A-E6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BC 817-25W E6327
BC 817-25W E6327
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
BC 857BT E6327
BC 857BT E6327
Infineon Technologies
TRANS PNP 45V 0.1A SC75
IRF7342TRPBF
IRF7342TRPBF
Infineon Technologies
MOSFET 2P-CH 55V 3.4A 8-SOIC
IRF630NPBF
IRF630NPBF
Infineon Technologies
MOSFET N-CH 200V 9.3A TO220AB
IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
IKW50N60TAFKSA1
IKW50N60TAFKSA1
Infineon Technologies
IGBT TRENCH/FS 600V 80A TO247-3
TLE9255WSKXUMA2
TLE9255WSKXUMA2
Infineon Technologies
IC TRANSCEIVER FULL DSO-14
ICE2PCS02GXUMA1
ICE2PCS02GXUMA1
Infineon Technologies
IC PFC CTRLR CCM 65KHZ 8DSO
BSP762TNT
BSP762TNT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-8