FF600R12ME4AB11BOSA1
  • Share:

Infineon Technologies FF600R12ME4AB11BOSA1

Manufacturer No:
FF600R12ME4AB11BOSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
IGBT MODULE 1200V 3350W
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FF600R12ME4_B11 is a dual IGBT4 module from Infineon Technologies, housed in the EconoDUAL™ 3 package. This module is designed for high-power industrial applications, offering a combination of TRENCHSTOP™ IGBT4, emitter-controlled diode, NTC (Negative Temperature Coefficient) thermistor, and PressFIT contact technology. It is optimized for high power density and reliability, making it suitable for a variety of demanding applications.

Key Specifications

Parameter Symbol Note or Test Condition Values Unit
Collector-emitter voltage VCES Tvj = 25 °C 1200 V
Continuous DC collector current ICDC Tvj max = 175 °C, TC = 100 °C 600 A
Repetitive peak collector current ICRM tp limited by Tvj op 1200 A
Gate-emitter peak voltage VGES ±20 V
Collector-emitter saturation voltage VCE sat IC = 600 A, VGE = 15 V, Tvj = 25 °C 1.75 - 2.10 V
Gate threshold voltage VGEth IC = f(VCE), VGE = 15 V V
Operating junction temperature Tvj op 150 °C

Key Features

  • Low VCE sat: The module features low collector-emitter saturation voltage, enhancing efficiency in high-power applications.
  • High power density: Designed with a high power density, making it ideal for compact system designs.
  • Isolated base plate: Ensures electrical isolation, improving safety and reliability.
  • Standard housing: Uses the standard EconoDUAL™ 3 housing, facilitating easy integration into existing systems.
  • VCE sat with positive temperature coefficient: This feature helps in preventing thermal runaway and ensures stable operation over a wide temperature range.
  • PressFIT contact technology: Offers easy and reliable assembly without the need for soldering or additional connectors.
  • NTC thermistor: Provides temperature monitoring and control, enhancing the module's thermal management capabilities.

Applications

  • High-power converters: Suitable for high-power conversion applications due to its high current and voltage ratings.
  • Motor drives: Ideal for motor drive systems requiring high power density and reliability.
  • Servo drives: Used in servo drive applications where precise control and high power are necessary.
  • UPS systems: Applicable in uninterruptible power supply systems for reliable power backup.
  • Wind turbines: Can be used in wind turbine systems for efficient and reliable power conversion.

Q & A

  1. What is the collector-emitter voltage rating of the FF600R12ME4_B11 module?

    The collector-emitter voltage rating is 1200 V.

  2. What is the continuous DC collector current of the module?

    The continuous DC collector current is 600 A at a maximum junction temperature of 175 °C and case temperature of 100 °C.

  3. What is the repetitive peak collector current of the module?

    The repetitive peak collector current is 1200 A, limited by the operating junction temperature.

  4. What is the gate-emitter peak voltage of the module?

    The gate-emitter peak voltage is ±20 V.

  5. What is the operating junction temperature of the module?

    The operating junction temperature is up to 150 °C.

  6. What are the key features of the FF600R12ME4_B11 module?

    The key features include low VCE sat, high power density, isolated base plate, standard housing, VCE sat with positive temperature coefficient, PressFIT contact technology, and NTC thermistor.

  7. In which applications is the FF600R12ME4_B11 module typically used?

    The module is used in high-power converters, motor drives, servo drives, UPS systems, and wind turbines.

  8. Is the FF600R12ME4_B11 module compliant with any specific standards?

    Yes, it is qualified for industrial applications according to the relevant tests of IEC 60747, 60749, and 60068.

  9. What is the benefit of using PressFIT contact technology in the FF600R12ME4_B11 module?

    The PressFIT contact technology offers easy and reliable assembly without the need for soldering or additional connectors.

  10. How does the NTC thermistor enhance the module's performance?

    The NTC thermistor provides temperature monitoring and control, enhancing the module's thermal management capabilities.

Product Attributes

IGBT Type:Trench Field Stop
Configuration:2 Independent
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):- 
Power - Max:3350 W
Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 600A
Current - Collector Cutoff (Max):3 mA
Input Capacitance (Cies) @ Vce:37 nF @ 25 V
Input:Standard
NTC Thermistor:Yes
Operating Temperature:-40°C ~ 150°C
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
0 Remaining View Similar

In Stock

$380.13
4

Please send RFQ , we will respond immediately.

Same Series
DD26M2S5WV5X
DD26M2S5WV5X
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S200TS
DD15S200TS
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HV50/AA
RD15S10HV50/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S200V5S
DD15S200V5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HV30/AA
DD26M20HV30/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2S500X/AA
DD26S2S500X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T20/AA
DD26S2S50T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E0/AA
DD26S200E0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V50
DD26S2S0V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200TX
DD44S3200TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WT0/AA
DD26S20WT0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60TX
DD44S32S60TX
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number FF600R12ME4AB11BOSA1 FF600R12ME4EB11BOSA1 FF600R12ME4PB11BOSA1 FF600R12ME4CB11BOSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Discontinued at Digi-Key Not For New Designs Discontinued at Digi-Key
IGBT Type Trench Field Stop Trench Field Stop - Trench Field Stop
Configuration 2 Independent Half Bridge - 2 Independent
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V - 1200 V
Current - Collector (Ic) (Max) - 995 A - 1060 A
Power - Max 3350 W 4050 W - 4050 W
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 600A 2.1V @ 15V, 600A - 2.1V @ 15V, 600A
Current - Collector Cutoff (Max) 3 mA 3 mA - 3 mA
Input Capacitance (Cies) @ Vce 37 nF @ 25 V 37 nF @ 25 V - 37 nF @ 25 V
Input Standard Standard - Standard
NTC Thermistor Yes Yes - Yes
Operating Temperature -40°C ~ 150°C -40°C ~ 150°C - -40°C ~ 150°C
Mounting Type Chassis Mount Chassis Mount - Chassis Mount
Package / Case Module Module - Module
Supplier Device Package Module Module - Module

Related Product By Categories

FF600R12ME4BOSA1
FF600R12ME4BOSA1
Infineon Technologies
IGBT MODULE 1200V 4050W
FS820R08A6P2LBBPSA1
FS820R08A6P2LBBPSA1
Infineon Technologies
IGBT MODULE 820A HYBRID PK DRIVE
FF600R12ME4AB11BOSA1
FF600R12ME4AB11BOSA1
Infineon Technologies
IGBT MODULE 1200V 3350W
FF600R12ME4CBOSA1
FF600R12ME4CBOSA1
Infineon Technologies
IGBT MOD 1200V 1060A 4050W
A1C15S12M3
A1C15S12M3
STMicroelectronics
IGBT MOD 1200V 15A ACEPACK1
FF600R12ME4WB73BPSA1
FF600R12ME4WB73BPSA1
Infineon Technologies
MEDIUM POWER ECONO
NXH240B120H3Q1PG
NXH240B120H3Q1PG
onsemi
PIM Q1 3 CHANNEL IGBT+SIC BOOST
FF600R12ME4B73BPSA2
FF600R12ME4B73BPSA2
Infineon Technologies
MEDIUM POWER ECONO AG-ECONOD-411
FF600R12ME4B11BPSA2
FF600R12ME4B11BPSA2
Infineon Technologies
MEDIUM POWER ECONO AG-ECONOD-411
FF600R12ME4PB11BOSA1
FF600R12ME4PB11BOSA1
Infineon Technologies
IGBT MODULE VCES 600V 600A
FF600R12ME4CPB11BPSA1
FF600R12ME4CPB11BPSA1
Infineon Technologies
IGBT MODULE VCES 600V 600A
STGE50NB60HD
STGE50NB60HD
STMicroelectronics
IGBT MOD 600V 100A 300W ISOTOP

Related Product By Brand

BAS40-06WE6327
BAS40-06WE6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BAS4002S-02LRHE6327
BAS4002S-02LRHE6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BAL74E6327HTSA1
BAL74E6327HTSA1
Infineon Technologies
DIODE GEN PURP 50V 250MA SOT23-3
BC846SH6327XTSA1
BC846SH6327XTSA1
Infineon Technologies
TRANS 2NPN 65V 0.1A SOT363
BC846SE6433BTMA1
BC846SE6433BTMA1
Infineon Technologies
TRANS 2NPN 65V 0.1A SOT363
BC 846B E6433
BC 846B E6433
Infineon Technologies
TRANS NPN 65V 0.1A SOT23
BCX5616E6433HTMA1
BCX5616E6433HTMA1
Infineon Technologies
TRANS NPN 80V 1A SOT89
BF998E6327
BF998E6327
Infineon Technologies
BF998 - RF SMALL SIGNAL TRANSIST
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
SPP20N60C3HKSA1
SPP20N60C3HKSA1
Infineon Technologies
MOSFET N-CH 600V 20.7A TO220-3
BTS6143DAUMA1
BTS6143DAUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO252-5
TLF35584QVVS1XUMA2
TLF35584QVVS1XUMA2
Infineon Technologies
IC REG AUTO APPL 1OUT VQFN-48-31