BSS123E6327
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Infineon Technologies BSS123E6327

Manufacturer No:
BSS123E6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 170MA SOT23-3
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The BSS123E6327 is an N-Channel Small Signal MOSFET produced by Infineon Technologies. This component is part of Infineon's extensive portfolio of N and P-Channel Small Signal MOSFETs, designed to meet the highest quality requirements in industry-standard packages. The BSS123E6327 is housed in a SOT23 package, making it suitable for a variety of applications where space is a concern.

Key Specifications

ParameterUnitMaxTypMin
Drain-Source Voltage (VDSS)V100
Gate-Source Voltage (VGSS)V±20
Continuous Drain Current (ID)A0.17
Pulsed Drain Current (ID)A0.68
Maximum Power Dissipation (PD)W0.36
Gate Threshold Voltage (VGS(th))V0.8 - 1.72
Static Drain-Source On-Resistance (RDS(on)) at VGS = 10 VΩ1.2 - 6
Input Capacitance (Ciss)pF73

Key Features

The BSS123E6327 features several key attributes that make it a reliable and efficient choice for various applications:

  • Enhancement Mode: The MOSFET operates in enhancement mode, which means it is normally off and requires a positive gate-source voltage to turn on.
  • Logic Level: It is a logic level MOSFET, making it compatible with standard logic voltage levels.
  • Avalanche Rated: The device is rated for avalanche conditions, providing robustness against transient voltage spikes.
  • Fast Switching: It offers fast switching times, which is crucial for high-frequency applications.
  • Dv/dt Rated: The MOSFET is rated for high dv/dt (voltage change over time), ensuring stability in dynamic operating conditions.
  • Pb-free and RoHS Compliant: The component is lead-free and compliant with RoHS standards, making it environmentally friendly.
  • Qualified According to Automotive Standards: It meets stringent automotive quality standards, ensuring reliability in demanding environments.
  • PPAP Capable: The device is capable of undergoing Production Part Approval Process (PPAP), which is essential for automotive and industrial applications.

Applications

The BSS123E6327 is versatile and can be used in a variety of applications, including:

  • LED Lighting: For controlling and switching LED lights efficiently.
  • ADAS (Advanced Driver Assistance Systems): In automotive systems that require reliable and fast switching.
  • Body Control Units: In automotive body control modules for managing various electrical functions.
  • SMPS (Switch-Mode Power Supplies): For efficient power conversion and management.
  • Motor Control: In motor control circuits where fast switching and low on-resistance are critical.

Q & A

  1. What is the maximum drain-source voltage of the BSS123E6327?
    The maximum drain-source voltage (VDSS) is 100 V.
  2. What is the continuous drain current rating of the BSS123E6327?
    The continuous drain current (ID) is 0.17 A.
  3. Is the BSS123E6327 Pb-free and RoHS compliant?
    Yes, the component is lead-free and RoHS compliant.
  4. What is the typical gate threshold voltage of the BSS123E6327?
    The typical gate threshold voltage (VGS(th)) ranges from 0.8 to 1.7 V.
  5. What are the key features of the BSS123E6327?
    The key features include enhancement mode operation, logic level compatibility, avalanche rating, fast switching, and dv/dt rating.
  6. In what package is the BSS123E6327 available?
    The BSS123E6327 is available in a SOT23 package.
  7. What are some common applications of the BSS123E6327?
    Common applications include LED lighting, ADAS, body control units, SMPS, and motor control.
  8. Is the BSS123E6327 qualified according to automotive standards?
    Yes, it is qualified according to automotive standards and is PPAP capable.
  9. What is the maximum power dissipation of the BSS123E6327?
    The maximum power dissipation (PD) is 0.36 W.
  10. What is the static drain-source on-resistance of the BSS123E6327 at VGS = 10 V?
    The static drain-source on-resistance (RDS(on)) at VGS = 10 V is typically between 1.2 and 6 Ω.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id:1.8V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:2.67 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:69 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23
Package / Case:TO-236-3, SC-59, SOT-23-3
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