BSS123L6327HTSA1
  • Share:

Infineon Technologies BSS123L6327HTSA1

Manufacturer No:
BSS123L6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 170MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS123L6327HTSA1 is a discrete semiconductor product manufactured by Infineon Technologies. Although this product is currently obsolete and no longer in production, it was widely used in various electronic applications due to its robust specifications and features. Here is an overview of its key aspects.

Key Specifications

Specification Value
Continuous Drain Current (ID) 170 mA
Drain to Source Voltage (Vdss) 100 V
Gate to Source Voltage (Vgs) 20 V
Fall Time 25 ns
Channel Type N-Channel

Key Features

  • N-Channel MOSFET: The BSS123L6327HTSA1 is an N-Channel MOSFET, making it suitable for a variety of switching and power management applications.
  • High Drain to Source Voltage: With a Vdss of 100 V, this MOSFET can handle high voltage applications.
  • Low Fall Time: The fall time of 25 ns indicates fast switching capabilities, which is beneficial for high-frequency applications.
  • Compact Package: Although specific package details are not provided here, MOSFETs from Infineon are often available in compact packages suitable for space-constrained designs.

Applications

  • Power Management: The BSS123L6327HTSA1 can be used in power management circuits due to its high voltage and current handling capabilities.
  • Switching Circuits: Its fast switching times make it suitable for use in switching circuits, such as in power supplies, motor control, and other high-frequency applications.
  • Automotive Systems: Given its robust specifications, it could be used in automotive systems that require reliable and efficient power management.
  • Industrial Control Systems: It can also be applied in industrial control systems where high reliability and performance are critical.

Q & A

  1. What is the continuous drain current of the BSS123L6327HTSA1?

    The continuous drain current (ID) is 170 mA.

  2. What is the drain to source voltage (Vdss) of the BSS123L6327HTSA1?

    The drain to source voltage (Vdss) is 100 V.

  3. What is the gate to source voltage (Vgs) of the BSS123L6327HTSA1?

    The gate to source voltage (Vgs) is 20 V.

  4. What is the fall time of the BSS123L6327HTSA1?

    The fall time is 25 ns.

  5. Is the BSS123L6327HTSA1 still in production?

    No, the BSS123L6327HTSA1 is obsolete and no longer manufactured.

  6. What type of MOSFET is the BSS123L6327HTSA1?

    The BSS123L6327HTSA1 is an N-Channel MOSFET.

  7. What are some common applications of the BSS123L6327HTSA1?

    Common applications include power management, switching circuits, automotive systems, and industrial control systems.

  8. Where can I find substitutes for the BSS123L6327HTSA1?

    You can find substitutes on websites like Digi-Key, Mouser, or through the manufacturer's recommendations.

  9. What are the benefits of using the BSS123L6327HTSA1 in high-frequency applications?

    The BSS123L6327HTSA1 offers fast switching times, which is beneficial for high-frequency applications.

  10. Can the BSS123L6327HTSA1 be used in space-constrained designs?

    Yes, MOSFETs from Infineon are often available in compact packages suitable for space-constrained designs.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id:1.8V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:2.67 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:69 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
60

Please send RFQ , we will respond immediately.

Same Series
BSS123 E6433
BSS123 E6433
MOSFET N-CH 100V 170MA SOT23-3
BSS123L7874XT
BSS123L7874XT
MOSFET N-CH 100V 170MA SOT23-3
BSS123L6327HTSA1
BSS123L6327HTSA1
MOSFET N-CH 100V 170MA SOT23-3
BSS123L6433HTMA1
BSS123L6433HTMA1
MOSFET N-CH 100V 170MA SOT23-3

Similar Products

Part Number BSS123L6327HTSA1 BSS126L6327HTSA1 BSS127L6327HTSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 170mA (Ta) 21mA (Ta) 21mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 0V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 170mA, 10V 500Ohm @ 16mA, 10V 500Ohm @ 16mA, 10V
Vgs(th) (Max) @ Id 1.8V @ 50µA 1.6V @ 8µA 2.6V @ 8µA
Gate Charge (Qg) (Max) @ Vgs 2.67 nC @ 10 V 2.1 nC @ 5 V 1 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 69 pF @ 25 V 28 pF @ 25 V 28 pF @ 25 V
FET Feature - Depletion Mode -
Power Dissipation (Max) 360mW (Ta) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-SOT23 PG-SOT23 PG-SOT23
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

NTH4LN019N65S3H
NTH4LN019N65S3H
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
PSMN4R0-30YLDX
PSMN4R0-30YLDX
Nexperia USA Inc.
MOSFET N-CH 30V 95A LFPAK56
STD2HNK60Z
STD2HNK60Z
STMicroelectronics
MOSFET N-CH 600V 2A DPAK
PSMN2R0-30YLE,115
PSMN2R0-30YLE,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
STH275N8F7-2AG
STH275N8F7-2AG
STMicroelectronics
MOSFET N-CH 80V 180A H2PAK-2
STD7ANM60N
STD7ANM60N
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
NTMFS4C03NT1G
NTMFS4C03NT1G
onsemi
MOSFET N-CH 30V 30A/136A 5DFN
STH315N10F7-6
STH315N10F7-6
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
STP360N4F6
STP360N4F6
STMicroelectronics
MOSFET N-CH 40V 120A TO220
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
BUK9880-55A,115
BUK9880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT223
STF13NM60N-H
STF13NM60N-H
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP

Related Product By Brand

BAV70UE6327
BAV70UE6327
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BAS7004SH6327XTSA1
BAS7004SH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT363
BAS16WE6327HTSA1
BAS16WE6327HTSA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
BC846SE6327BTSA1
BC846SE6327BTSA1
Infineon Technologies
TRANS 2NPN 65V 0.1A SOT363
BC847PNE6433BTMA1
BC847PNE6433BTMA1
Infineon Technologies
TRANS NPN/PNP 45V 0.1A SOT363-6
BCP 54-16 E6327
BCP 54-16 E6327
Infineon Technologies
TRANS NPN 45V 1A SOT223-4
IRFB4227PBF
IRFB4227PBF
Infineon Technologies
MOSFET N-CH 200V 65A TO220AB
FF600R12ME4CB11BPSA1
FF600R12ME4CB11BPSA1
Infineon Technologies
MEDIUM POWER ECONO AG-ECONOD-411
BTS70302EPAXUMA1
BTS70302EPAXUMA1
Infineon Technologies
IC PWR SWTCH N-CHAN 1:1 TSDSO-14
BTS452RATMA1
BTS452RATMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO252-5
BTS500851TMAATMA1
BTS500851TMAATMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO220-7
FM28V100-TG
FM28V100-TG
Infineon Technologies
IC FRAM 1MBIT PARALLEL 32TSOP I