BSS123L6327HTSA1
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Infineon Technologies BSS123L6327HTSA1

Manufacturer No:
BSS123L6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 170MA SOT23-3
Delivery:
Payment:
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Product Introduction

Overview

The BSS123L6327HTSA1 is a discrete semiconductor product manufactured by Infineon Technologies. Although this product is currently obsolete and no longer in production, it was widely used in various electronic applications due to its robust specifications and features. Here is an overview of its key aspects.

Key Specifications

Specification Value
Continuous Drain Current (ID) 170 mA
Drain to Source Voltage (Vdss) 100 V
Gate to Source Voltage (Vgs) 20 V
Fall Time 25 ns
Channel Type N-Channel

Key Features

  • N-Channel MOSFET: The BSS123L6327HTSA1 is an N-Channel MOSFET, making it suitable for a variety of switching and power management applications.
  • High Drain to Source Voltage: With a Vdss of 100 V, this MOSFET can handle high voltage applications.
  • Low Fall Time: The fall time of 25 ns indicates fast switching capabilities, which is beneficial for high-frequency applications.
  • Compact Package: Although specific package details are not provided here, MOSFETs from Infineon are often available in compact packages suitable for space-constrained designs.

Applications

  • Power Management: The BSS123L6327HTSA1 can be used in power management circuits due to its high voltage and current handling capabilities.
  • Switching Circuits: Its fast switching times make it suitable for use in switching circuits, such as in power supplies, motor control, and other high-frequency applications.
  • Automotive Systems: Given its robust specifications, it could be used in automotive systems that require reliable and efficient power management.
  • Industrial Control Systems: It can also be applied in industrial control systems where high reliability and performance are critical.

Q & A

  1. What is the continuous drain current of the BSS123L6327HTSA1?

    The continuous drain current (ID) is 170 mA.

  2. What is the drain to source voltage (Vdss) of the BSS123L6327HTSA1?

    The drain to source voltage (Vdss) is 100 V.

  3. What is the gate to source voltage (Vgs) of the BSS123L6327HTSA1?

    The gate to source voltage (Vgs) is 20 V.

  4. What is the fall time of the BSS123L6327HTSA1?

    The fall time is 25 ns.

  5. Is the BSS123L6327HTSA1 still in production?

    No, the BSS123L6327HTSA1 is obsolete and no longer manufactured.

  6. What type of MOSFET is the BSS123L6327HTSA1?

    The BSS123L6327HTSA1 is an N-Channel MOSFET.

  7. What are some common applications of the BSS123L6327HTSA1?

    Common applications include power management, switching circuits, automotive systems, and industrial control systems.

  8. Where can I find substitutes for the BSS123L6327HTSA1?

    You can find substitutes on websites like Digi-Key, Mouser, or through the manufacturer's recommendations.

  9. What are the benefits of using the BSS123L6327HTSA1 in high-frequency applications?

    The BSS123L6327HTSA1 offers fast switching times, which is beneficial for high-frequency applications.

  10. Can the BSS123L6327HTSA1 be used in space-constrained designs?

    Yes, MOSFETs from Infineon are often available in compact packages suitable for space-constrained designs.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id:1.8V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:2.67 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:69 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
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Similar Products

Part Number BSS123L6327HTSA1 BSS126L6327HTSA1 BSS127L6327HTSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 170mA (Ta) 21mA (Ta) 21mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 0V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 170mA, 10V 500Ohm @ 16mA, 10V 500Ohm @ 16mA, 10V
Vgs(th) (Max) @ Id 1.8V @ 50µA 1.6V @ 8µA 2.6V @ 8µA
Gate Charge (Qg) (Max) @ Vgs 2.67 nC @ 10 V 2.1 nC @ 5 V 1 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 69 pF @ 25 V 28 pF @ 25 V 28 pF @ 25 V
FET Feature - Depletion Mode -
Power Dissipation (Max) 360mW (Ta) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-SOT23 PG-SOT23 PG-SOT23
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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