Overview
The BCX 55-16 E6327 is a bipolar junction transistor (BJT) produced by Infineon Technologies. This transistor is part of the BCX55 series, known for its high current gain and low saturation voltage, making it suitable for a variety of applications in electronic circuits. Although the specific part number BCX 55-16 E6327 is currently obsolete and no longer manufactured, it remains relevant for existing designs and maintenance of older systems.
Key Specifications
| Parameter | Symbol | Values | Unit |
|---|---|---|---|
| Collector-emitter breakdown voltage | V(BR)CEO | 60 | V |
| Collector-base breakdown voltage | V(BR)CBO | 60 | V |
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V |
| Collector current | IC | 1 | A |
| Peak collector current (tp ≤ 10 ms) | ICM | 1.5 | A |
| Base current | IB | 100 | mA |
| Peak base current | IBM | 200 | mA |
| Total power dissipation (TS ≤ 120°C) | Ptot | 2 | W |
| Junction temperature | Tj | 150 | °C |
| Storage temperature | Tstg | -65 to 150 | °C |
| DC current gain (IC = 150 mA, VCE = 2 V) | hFE | 100 | |
| Collector-emitter saturation voltage (IC = 500 mA, IB = 50 mA) | VCEsat | 0.5 | V |
Key Features
- High DC Current Gain: The BCX 55-16 E6327 has a high DC current gain (hFE) of up to 100, making it suitable for applications requiring high amplification.
- Low Saturation Voltage: It features a low collector-emitter saturation voltage (VCEsat) of 0.5 V, which is beneficial for reducing power losses in switching applications.
- High Breakdown Voltages: The transistor has high breakdown voltages, including collector-emitter (V(BR)CEO), collector-base (V(BR)CBO), and emitter-base (V(BR)EBO) breakdown voltages, ensuring robustness against voltage spikes).
- Compact Package: The SOT89 package is compact and suitable for space-constrained designs, offering a good balance between performance and size).
Applications
- Amplifier Circuits: The high current gain and low saturation voltage make this transistor ideal for use in amplifier circuits, including audio and general-purpose amplifiers).
- Switching Circuits: Its low saturation voltage and high breakdown voltages make it suitable for switching applications, such as in power supplies and motor control circuits).
- Automotive Electronics: The robust electrical characteristics and high temperature ratings make it a candidate for use in automotive electronics, such as in ignition systems and other vehicle control circuits).
Q & A
- What is the collector-emitter breakdown voltage of the BCX 55-16 E6327?
The collector-emitter breakdown voltage (V(BR)CEO) is 60 V).
- What is the maximum collector current for this transistor?
The maximum collector current (IC) is 1 A, with a peak collector current (ICM) of 1.5 A for tp ≤ 10 ms).
- What is the DC current gain (hFE) of the BCX 55-16 E6327?
The DC current gain (hFE) is up to 100 at IC = 150 mA and VCE = 2 V).
- What is the collector-emitter saturation voltage (VCEsat) of this transistor?
The collector-emitter saturation voltage (VCEsat) is 0.5 V at IC = 500 mA and IB = 50 mA).
- What is the junction temperature rating for the BCX 55-16 E6327?
The junction temperature (Tj) rating is up to 150°C).
- What is the storage temperature range for this transistor?
The storage temperature range (Tstg) is from -65°C to 150°C).
- What package type is the BCX 55-16 E6327 available in?
The transistor is available in the SOT89 package).
- Is the BCX 55-16 E6327 still in production?
No, the BCX 55-16 E6327 is obsolete and no longer manufactured).
- What are some common applications for the BCX 55-16 E6327?
Common applications include amplifier circuits, switching circuits, and automotive electronics).
- What is the total power dissipation (Ptot) for this transistor?
The total power dissipation (Ptot) is 2 W at TS ≤ 120°C).
