BC858B
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Infineon Technologies BC858B

Manufacturer No:
BC858B
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS PNP 30V 0.1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC858B is a general-purpose PNP bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is designed for a wide range of applications, particularly in audio frequency (AF) input stages and driver circuits. It is known for its high current gain, low collector-emitter saturation voltage, and low noise characteristics between 30 Hz and 15 kHz. The BC858B is packaged in a SOT-23-3 case, making it suitable for surface mount technology (SMT) assembly. It is also RoHS compliant and lead-free, adhering to environmental standards.

Key Specifications

Parameter Value
Manufacturer Infineon Technologies
Transistor Type PNP
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 30 V
Vce Saturation (Max) @ Ib, Ic 650 mV @ 5 mA, 100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2 mA, 5 V
Power - Max 250 mW
Frequency - Transition 100 MHz
Operating Temperature -55 ℃ ~ 150 ℃ (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-3 (TO-236)
Environmental Compliance RoHS Compliant, Lead Free

Key Features

  • High Current Gain: The BC858B offers a high DC current gain (hFE) of 220 at 2 mA and 5 V, making it suitable for amplification and switching applications.
  • Low Collector-Emitter Saturation Voltage: It has a low Vce saturation voltage of 650 mV at 5 mA and 100 mA, which reduces power losses and improves efficiency.
  • Low Noise: The transistor exhibits low noise characteristics between 30 Hz and 15 kHz, making it ideal for audio frequency applications.
  • Complementary Types: The BC858B has complementary NPN types such as BC847-BC850, allowing for balanced circuit designs.
  • RoHS Compliant and Lead Free: The transistor is packaged in a lead-free, RoHS-compliant SOT-23-3 case, ensuring environmental compliance.

Applications

  • AF Input Stages: The BC858B is well-suited for audio frequency input stages due to its low noise and high current gain characteristics.
  • Driver Applications: It can be used in various driver circuits where high current gain and low saturation voltage are required.
  • General Purpose Amplification: The transistor can be used in general-purpose amplification and switching circuits due to its robust specifications and reliability.

Q & A

  1. What is the maximum collector current of the BC858B transistor?

    The maximum collector current (Ic) of the BC858B transistor is 100 mA.

  2. What is the maximum collector-emitter breakdown voltage of the BC858B?

    The maximum collector-emitter breakdown voltage is 30 V).

  3. What is the typical DC current gain (hFE) of the BC858B transistor?

    The typical DC current gain (hFE) is 220 at 2 mA and 5 V).

  4. What is the operating temperature range of the BC858B transistor?

    The operating temperature range is -55 ℃ to 150 ℃ (TJ)).

  5. Is the BC858B transistor RoHS compliant?

    Yes, the BC858B transistor is RoHS compliant and lead-free).

  6. What is the package type of the BC858B transistor?

    The BC858B transistor is packaged in a SOT-23-3 (TO-236) case).

  7. What are some potential applications of the BC858B transistor?

    Potential applications include AF input stages, driver applications, and general-purpose amplification and switching circuits).

  8. Does the BC858B have complementary NPN types?

    Yes, the BC858B has complementary NPN types such as BC847-BC850).

  9. What is the maximum power dissipation of the BC858B transistor?

    The maximum power dissipation is 250 mW).

  10. What is the transition frequency of the BC858B transistor?

    The transition frequency is 100 MHz).

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number BC858B BC858C BC859B BC858BW BC858A
Manufacturer Infineon Technologies Fairchild Semiconductor Fairchild Semiconductor Infineon Technologies Infineon Technologies
Product Status Active Obsolete Active Active Active
Transistor Type PNP PNP PNP PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V 30 V 30 V 30 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V 420 @ 2mA, 5V 220 @ 2mA, 5V 220 @ 2mA, 5V 125 @ 2mA, 5V
Power - Max 250 mW 380 mW 250 mW 200 mW 250 mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-323 SOT-23-3 (TO-236)

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