Overview
The BC 807-25 E6327 is a PNP Silicon AF (Audio Frequency) transistor manufactured by Infineon Technologies. This transistor is designed for general AF applications and is known for its high collector current, high current gain, and low collector-emitter saturation voltage. It is part of the BC807 series, which includes various types such as BC807-16, BC807-25, and BC807-40, each with different current handling capabilities. The BC 807-25 E6327 is packaged in a Pb-free (RoHS compliant) SOT-23-3 package and is qualified according to AEC Q101 standards.
Key Specifications
| Parameter | Symbol | Values | Unit |
|---|---|---|---|
| Collector-emitter breakdown voltage | V(BR)CEO | 45 | V |
| Collector-base breakdown voltage | V(BR)CBO | 50 | V |
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V |
| Collector current | IC | 500 mA | mA |
| Base current | IB | 50 mA | mA |
| Collector-emitter saturation voltage | VCEsat | 0.7 | V |
| Base-emitter saturation voltage | VBEsat | 1.2 | V |
| Transition frequency | fT | 200 MHz | MHz |
| Junction temperature | Tj | 150 °C | °C |
| Total power dissipation | Ptot | 360 mW | mW |
Key Features
- High collector current up to 500 mA
- High current gain (hFE) with values ranging from 100 to 630 depending on the type and operating conditions
- Low collector-emitter saturation voltage (VCEsat) of 0.7 V
- Low base-emitter saturation voltage (VBEsat) of 1.2 V
- Pb-free (RoHS compliant) SOT-23-3 package
- Qualified according to AEC Q101 standards
- Complementary types available (BC817.../W, BC818.../W for NPN transistors)
Applications
The BC 807-25 E6327 is suitable for a variety of general AF applications, including:
- Audio amplifiers and audio signal processing circuits
- Switching and amplification in electronic devices
- Automotive electronics where high reliability and robustness are required
- Industrial control systems and automation
Q & A
- What is the collector-emitter breakdown voltage of the BC 807-25 E6327?
The collector-emitter breakdown voltage (V(BR)CEO) is 45 V.
- What is the maximum collector current for the BC 807-25 E6327?
The maximum collector current (IC) is 500 mA.
- What is the typical current gain (hFE) of the BC 807-25 E6327?
The typical current gain (hFE) ranges from 100 to 630 depending on the operating conditions.
- What is the collector-emitter saturation voltage (VCEsat) of the BC 807-25 E6327?
The collector-emitter saturation voltage (VCEsat) is 0.7 V.
- What is the base-emitter saturation voltage (VBEsat) of the BC 807-25 E6327?
The base-emitter saturation voltage (VBEsat) is 1.2 V.
- Is the BC 807-25 E6327 RoHS compliant?
- What are the complementary types for the BC 807-25 E6327?
The complementary types are BC817.../W and BC818.../W for NPN transistors.
- What is the junction temperature rating for the BC 807-25 E6327?
The junction temperature (Tj) rating is 150 °C.
- What is the total power dissipation (Ptot) for the BC 807-25 E6327?
The total power dissipation (Ptot) is 360 mW.
- Is the BC 807-25 E6327 suitable for life-support devices or systems?
No, Infineon Technologies components may only be used in life-support devices or systems with the express written approval of Infineon Technologies.
