BC 807-16 E6327
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Infineon Technologies BC 807-16 E6327

Manufacturer No:
BC 807-16 E6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.5A SOT-23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC 807-16 E6327 is a PNP Silicon AF (Amplifier) Transistor manufactured by Infineon Technologies. This transistor is designed for general AF applications and is known for its high collector current, high current gain, and low collector-emitter saturation voltage. It is part of the BC807 series, which also includes complementary NPN types such as the BC817 and BC818 series. The BC 807-16 E6327 is packaged in a Pb-free (RoHS compliant) SOT-23 package and is qualified according to AEC Q101 standards.

Key Specifications

Parameter Symbol Values Unit
Collector-emitter breakdown voltage V(BR)CEO 45 V
Collector-base breakdown voltage V(BR)CBO 50 V
Emitter-base breakdown voltage V(BR)EBO 5 V
Continuous Collector Current IC 0.5 A A
Peak Collector Current ICM 1.5 A A
Base Current IB 50 mA mA
Total Power Dissipation Pd 330 mW mW
Junction Temperature Tj 150 °C °C
DC Current Gain (hFE) hFE 100 - 300 -
Collector-emitter Saturation Voltage VCEsat 0.7 V V
Base-emitter Saturation Voltage VBEsat 1.2 V V

Key Features

  • High collector current and high current gain, making it suitable for various amplifier applications.
  • Low collector-emitter saturation voltage, which reduces power losses and improves efficiency.
  • Pb-free (RoHS compliant) SOT-23 package, ensuring environmental compliance.
  • Qualified according to AEC Q101 standards, indicating reliability and quality for automotive and other demanding applications.
  • Complementary types available (BC817 and BC818 series for NPN), allowing for balanced circuit designs.

Applications

  • General AF (Amplifier) applications in electronic circuits.
  • Automotive electronics due to its AEC Q101 qualification.
  • Audio amplifiers and other low-frequency applications.
  • Switching and driver circuits where high current gain and low saturation voltage are beneficial.

Q & A

  1. What is the collector-emitter breakdown voltage of the BC 807-16 E6327?

    The collector-emitter breakdown voltage is 45 V.

  2. What is the continuous collector current of the BC 807-16 E6327?

    The continuous collector current is 0.5 A.

  3. What is the total power dissipation of the BC 807-16 E6327?

    The total power dissipation is 330 mW.

  4. Is the BC 807-16 E6327 RoHS compliant?
  5. What are the complementary types for the BC 807-16 E6327?

    The complementary types are BC817 and BC818 series for NPN transistors.

  6. What is the junction temperature rating for the BC 807-16 E6327?

    The junction temperature rating is 150 °C.

  7. What is the DC current gain (hFE) range for the BC 807-16 E6327?

    The DC current gain (hFE) range is 100 to 300.

  8. What is the collector-emitter saturation voltage of the BC 807-16 E6327?

    The collector-emitter saturation voltage is 0.7 V.

  9. What is the base-emitter saturation voltage of the BC 807-16 E6327?

    The base-emitter saturation voltage is 1.2 V.

  10. Can the BC 807-16 E6327 be used in life-support devices?

    No, it cannot be used in life-support devices without the express written approval of Infineon Technologies.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 1V
Power - Max:330 mW
Frequency - Transition:200MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
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Similar Products

Part Number BC 807-16 E6327 BC 807-16W E6327 BC 817-16 E6327
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
Transistor Type PNP PNP NPN
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 1V 100 @ 100mA, 1V 100 @ 100mA, 1V
Power - Max 330 mW 250 mW 330 mW
Frequency - Transition 200MHz 200MHz 170MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23 PG-SOT323 PG-SOT23

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