BF998E6327
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Infineon Technologies BF998E6327

Manufacturer No:
BF998E6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
BF998 - RF SMALL SIGNAL TRANSIST
Delivery:
Payment:
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Product Introduction

Overview

The BF998E6327 is a dual-gate N-channel MOSFET manufactured by Infineon Technologies. This component is specifically designed for high-frequency, low-noise amplifier applications. It is known for its high performance and reliability in various electronic circuits, making it a popular choice in the industry.

Key Specifications

ParameterValue
Channel TypeDual-gate N-channel
Package TypeSOT-89
Drain-Source Voltage (Vds)25 V
Gate-Source Voltage (Vgs)±10 V
Continuous Drain Current (Id)100 mA
Power Dissipation (Pd)350 mW
Operating Temperature Range-55°C to +150°C

Key Features

  • High-frequency operation
  • Low noise characteristics
  • Dual-gate design for improved control and stability
  • Compact SOT-89 package
  • High reliability and durability

Applications

The BF998E6327 is widely used in various high-frequency and low-noise applications, including:

  • RF amplifiers
  • Microwave circuits
  • Communication systems
  • Medical equipment
  • Aerospace and defense systems

Q & A

  1. What is the BF998E6327?
    The BF998E6327 is a dual-gate N-channel MOSFET designed for high-frequency, low-noise amplifier applications.
  2. Who manufactures the BF998E6327?
    The BF998E6327 is manufactured by Infineon Technologies.
  3. What is the package type of the BF998E6327?
    The package type is SOT-89.
  4. What is the maximum drain-source voltage (Vds) of the BF998E6327?
    The maximum drain-source voltage is 25 V.
  5. What is the continuous drain current (Id) of the BF998E6327?
    The continuous drain current is 100 mA.
  6. What are the typical applications of the BF998E6327?
    Typical applications include RF amplifiers, microwave circuits, communication systems, medical equipment, and aerospace and defense systems.
  7. What is the operating temperature range of the BF998E6327?
    The operating temperature range is -55°C to +150°C.
  8. What are the key features of the BF998E6327?
    The key features include high-frequency operation, low noise characteristics, dual-gate design, compact SOT-89 package, and high reliability.
  9. Where can I purchase the BF998E6327?
    The BF998E6327 can be purchased from various electronic component distributors such as Mouser, Digi-Key, and Allelco Electronics.
  10. What is the power dissipation (Pd) of the BF998E6327?
    The power dissipation is 350 mW.

Product Attributes

Transistor Type:N-Channel
Frequency:1GHz
Gain:28dB
Voltage - Test:8 V
Current Rating (Amps):15mA
Noise Figure:2.8dB
Current - Test:10 mA
Power - Output:- 
Voltage - Rated:12 V
Package / Case:TO-253-4, TO-253AA
Supplier Device Package:SOT143 (SC-61)
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