Overview
The BLF6G21-10G,135 is a 10 W LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed by Ampleon USA Inc. for base station applications. This transistor operates across a wide frequency range from HF to 2200 MHz, making it versatile for various wireless communication systems. The device is known for its high efficiency, excellent thermal stability, and ruggedness, which are critical for reliable operation in demanding environments.
Key Specifications
| Parameter | Conditions | Min | Max | Unit | |
|---|---|---|---|---|---|
| f range | Frequency range | - | - | 2200 | MHz |
| P L(3dB) | Nominal output power at 3 dB gain compression | - | 10 | - | W |
| G p | Power gain | P L(AV) = 0.7 W; V DS = 28 V | 18.5 | - | dB |
| η D | Drain efficiency | P L(AV) = 0.7 W; V DS = 28 V; 2110 MHz < f < 2170 MHz; I Dq = 100 mA | - | 15 | % |
| P L(AV) | Average output power | - | 0.7 | - | W |
| ACPR | Adjacent channel power ratio | P L(AV) = 0.7 W; V DS = 28 V; 2110 MHz < f < 2170 MHz; I Dq = 100 mA | - | -50 | dBc |
| V DS | Drain-source voltage | - | - | 65 | V |
| Package | - | - | - | SOT-538A | - |
Key Features
- Easy power control: Simplifies the process of managing power output.
- Integrated ESD protection: Enhances device reliability by protecting against electrostatic discharge.
- Excellent ruggedness: Ensures the transistor can withstand harsh operating conditions.
- High efficiency: Optimizes power usage and reduces heat generation.
- Excellent thermal stability: Maintains consistent performance across various temperatures.
- No internal matching for broadband operation: Allows for flexible use across a wide frequency range without the need for internal matching components.
- Compliant to Directive 2002/95/EC (RoHS): Meets environmental standards by restricting the use of hazardous substances.
Applications
- RF power amplifiers for GSM, PHS, EDGE, CDMA, and W-CDMA base stations: Ideal for various wireless communication systems.
- Broadcast drivers: Suitable for broadcast applications requiring high power and efficiency.
- Multicarrier applications in the HF to 2200 MHz frequency range: Versatile for use in multiple frequency bands and applications.
Q & A
- What is the maximum frequency range of the BLF6G21-10G,135 transistor?
The BLF6G21-10G,135 operates up to a frequency of 2200 MHz.
- What is the nominal output power of the BLF6G21-10G,135 at 3 dB gain compression?
The nominal output power is 10 W.
- What is the power gain of the BLF6G21-10G,135?
The power gain is 18.5 dB under specified conditions.
- What is the drain efficiency of the BLF6G21-10G,135?
The drain efficiency is 15% under specified conditions.
- Does the BLF6G21-10G,135 have integrated ESD protection?
Yes, it has integrated ESD protection.
- What is the package type of the BLF6G21-10G,135?
The package type is SOT-538A.
- Is the BLF6G21-10G,135 compliant with RoHS directives?
Yes, it is compliant with Directive 2002/95/EC (RoHS).
- What are the typical applications of the BLF6G21-10G,135?
It is used in RF power amplifiers for base stations, broadcast drivers, and multicarrier applications.
- What is the maximum drain-source voltage for the BLF6G21-10G,135?
The maximum drain-source voltage is 65 V.
- Does the BLF6G21-10G,135 require internal matching for broadband operation?
No, it does not require internal matching for broadband operation.
