CLF1G0060-10
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Ampleon USA Inc. CLF1G0060-10

Manufacturer No:
CLF1G0060-10
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
CLF1G0060-10 - 10W BROADBAND RF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CLF1G0060-10 and CLF1G0060S-10 are 10 W general purpose broadband GaN (Gallium Nitride) High Electron Mobility Transistors (HEMTs) produced by Ampleon USA Inc. These devices are designed for operation from DC to 6.0 GHz, making them versatile for a wide range of RF applications. They are known for their high voltage operation, excellent ruggedness, and thermally enhanced packaging, which ensures reliable performance under various conditions.

Key Specifications

Parameter Conditions Min Max Unit
f range 0 6000 MHz
P L(1dB) 10 W
V DS P L = 10 W 50 V
η D P L = 10 W 44 52 %
G p P L = 10 W 13.5 16 dB
RL in P L = 10 W -10 dB
t r P L = 10 W 5 ns
t f P L = 10 W 5 ns
V(BR)DSS VGS = -7 V; IDS = 2.4 mA 150 V
VGS -8 3 V
IGF external RG = 5 Ω 3.7 mA mA
Tstg -65 150 °C
Tj 250 °C
Rth(j-c) Tj = 200 °C 4.6 K/W

Key Features

  • Frequency of operation from DC to 6.0 GHz, making it suitable for a wide range of RF applications.
  • 10 W general purpose broadband RF power GaN HEMT, offering high power output.
  • Excellent ruggedness with a VSWR (Voltage Standing Wave Ratio) of 10:1, ensuring robust performance under various load conditions.
  • High voltage operation up to 50 V, which is beneficial for applications requiring high power and efficiency.
  • Thermally enhanced package, which helps in efficient heat dissipation and maintains device reliability.

Applications

  • Commercial wireless infrastructure (Cellular, WiMAX).
  • Radar systems.
  • Broadband general purpose amplifiers.
  • Public mobile radios.
  • Industrial, Scientific, and Medical (ISM) applications.
  • Jammers and EMC testing.
  • Defense applications.

Q & A

  1. Q: What is the frequency range of the CLF1G0060-10?

    A: The CLF1G0060-10 operates from DC to 6.0 GHz.

  2. Q: What is the output power of the CLF1G0060-10?

    A: The output power is 10 W.

  3. Q: What is the supply voltage for the CLF1G0060-10?

    A: The supply voltage is up to 50 V.

  4. Q: What type of package does the CLF1G0060-10 use?

    A: The device is packaged in a SOT-1227A (CDFM2) package.

  5. Q: What are the key applications of the CLF1G0060-10?

    A: Key applications include commercial wireless infrastructure, radar, broadband general purpose amplifiers, public mobile radios, ISM applications, jammers, EMC testing, and defense applications.

  6. Q: What is the thermal resistance from junction to case for the CLF1G0060-10?

    A: The thermal resistance from junction to case (Rth(j-c)) is 4.6 K/W at Tj = 200 °C.

  7. Q: How does the CLF1G0060-10 ensure ruggedness?

    A: The device ensures excellent ruggedness with a VSWR of 10:1, making it robust under various load conditions.

  8. Q: What is the typical drain efficiency of the CLF1G0060-10?

    A: The typical drain efficiency ranges from 42.6% to 52% depending on the operating frequency and conditions.

  9. Q: Is the CLF1G0060-10 suitable for high-power applications?

    A: Yes, the device is designed for high-power applications with its 10 W output and high voltage operation up to 50 V.

  10. Q: Where can I find detailed information and datasheets for the CLF1G0060-10?

    A: Detailed information and datasheets can be found on the official Ampleon website, as well as on distributor websites like Digi-Key and RFMW.

Product Attributes

Transistor Type:GaN HEMT
Frequency:6GHz
Gain:16dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:50 mA
Power - Output:10W
Voltage - Rated:150 V
Package / Case:SOT-1227B
Supplier Device Package:SOT1227B
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$84.71
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