CLF1G0060-10
  • Share:

Ampleon USA Inc. CLF1G0060-10

Manufacturer No:
CLF1G0060-10
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
CLF1G0060-10 - 10W BROADBAND RF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CLF1G0060-10 and CLF1G0060S-10 are 10 W general purpose broadband GaN (Gallium Nitride) High Electron Mobility Transistors (HEMTs) produced by Ampleon USA Inc. These devices are designed for operation from DC to 6.0 GHz, making them versatile for a wide range of RF applications. They are known for their high voltage operation, excellent ruggedness, and thermally enhanced packaging, which ensures reliable performance under various conditions.

Key Specifications

Parameter Conditions Min Max Unit
f range 0 6000 MHz
P L(1dB) 10 W
V DS P L = 10 W 50 V
η D P L = 10 W 44 52 %
G p P L = 10 W 13.5 16 dB
RL in P L = 10 W -10 dB
t r P L = 10 W 5 ns
t f P L = 10 W 5 ns
V(BR)DSS VGS = -7 V; IDS = 2.4 mA 150 V
VGS -8 3 V
IGF external RG = 5 Ω 3.7 mA mA
Tstg -65 150 °C
Tj 250 °C
Rth(j-c) Tj = 200 °C 4.6 K/W

Key Features

  • Frequency of operation from DC to 6.0 GHz, making it suitable for a wide range of RF applications.
  • 10 W general purpose broadband RF power GaN HEMT, offering high power output.
  • Excellent ruggedness with a VSWR (Voltage Standing Wave Ratio) of 10:1, ensuring robust performance under various load conditions.
  • High voltage operation up to 50 V, which is beneficial for applications requiring high power and efficiency.
  • Thermally enhanced package, which helps in efficient heat dissipation and maintains device reliability.

Applications

  • Commercial wireless infrastructure (Cellular, WiMAX).
  • Radar systems.
  • Broadband general purpose amplifiers.
  • Public mobile radios.
  • Industrial, Scientific, and Medical (ISM) applications.
  • Jammers and EMC testing.
  • Defense applications.

Q & A

  1. Q: What is the frequency range of the CLF1G0060-10?

    A: The CLF1G0060-10 operates from DC to 6.0 GHz.

  2. Q: What is the output power of the CLF1G0060-10?

    A: The output power is 10 W.

  3. Q: What is the supply voltage for the CLF1G0060-10?

    A: The supply voltage is up to 50 V.

  4. Q: What type of package does the CLF1G0060-10 use?

    A: The device is packaged in a SOT-1227A (CDFM2) package.

  5. Q: What are the key applications of the CLF1G0060-10?

    A: Key applications include commercial wireless infrastructure, radar, broadband general purpose amplifiers, public mobile radios, ISM applications, jammers, EMC testing, and defense applications.

  6. Q: What is the thermal resistance from junction to case for the CLF1G0060-10?

    A: The thermal resistance from junction to case (Rth(j-c)) is 4.6 K/W at Tj = 200 °C.

  7. Q: How does the CLF1G0060-10 ensure ruggedness?

    A: The device ensures excellent ruggedness with a VSWR of 10:1, making it robust under various load conditions.

  8. Q: What is the typical drain efficiency of the CLF1G0060-10?

    A: The typical drain efficiency ranges from 42.6% to 52% depending on the operating frequency and conditions.

  9. Q: Is the CLF1G0060-10 suitable for high-power applications?

    A: Yes, the device is designed for high-power applications with its 10 W output and high voltage operation up to 50 V.

  10. Q: Where can I find detailed information and datasheets for the CLF1G0060-10?

    A: Detailed information and datasheets can be found on the official Ampleon website, as well as on distributor websites like Digi-Key and RFMW.

Product Attributes

Transistor Type:GaN HEMT
Frequency:6GHz
Gain:16dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:50 mA
Power - Output:10W
Voltage - Rated:150 V
Package / Case:SOT-1227B
Supplier Device Package:SOT1227B
0 Remaining View Similar

In Stock

$84.71
10

Please send RFQ , we will respond immediately.

Same Series
RD15S10H00/AA
RD15S10H00/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20JVL0/AA
DD15S20JVL0/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S2S0V50
DD15S2S0V50
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S100E30
CBC47W1S100E30
CONN D-SUB RCPT 47POS CRIMP
CBC46W4S10G00/AA
CBC46W4S10G00/AA
CONN D-SUB RCPT 46POS CRIMP
M24308/24-67Z
M24308/24-67Z
CONN D-SUB HD PLUG 15POS SLDR
DD26S2S0V5X
DD26S2S0V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HV30/AA
DD26S10HV30/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S50T0
DD26S2S50T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HV50/AA
DD26S10HV50/AA
CONN D-SUB HD RCPT 26POS CRIMP
CBC46W4S1000S
CBC46W4S1000S
CONN D-SUB RCPT 46POS CRIMP
DD44S3200TX
DD44S3200TX
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

BLF881S,112
BLF881S,112
Ampleon USA Inc.
RF MOSFET LDMOS 50V LDMOST
BLF7G20LS-90P,112
BLF7G20LS-90P,112
NXP USA Inc.
RF PFET, 2-ELEMENT, L BAND, SILI
BLF404
BLF404
Rochester Electronics, LLC
BLF404 - UHF POWER VDMOS TRANSIS
PD57045-E
PD57045-E
STMicroelectronics
FET RF 65V 945MHZ PWRSO-10
BLF7G24LS-100,118
BLF7G24LS-100,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
BLF2043F,112
BLF2043F,112
Ampleon USA Inc.
RF FET LDMOS 65V 11DB SOT467C
BLF6G27S-45,135
BLF6G27S-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608B
BLF6G22-45,112
BLF6G22-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT608A
BLF7G20LS-250P,118
BLF7G20LS-250P,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539B
NE5550979A-A
NE5550979A-A
CEL
FET RF 30V 900MHZ 79A-PKG
BLF640U
BLF640U
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT538A
MMBF5485_NB50012
MMBF5485_NB50012
onsemi
IC POWER MANAGEMENT

Related Product By Brand

BLF183XRU
BLF183XRU
Ampleon USA Inc.
RF FET LDMOS 135V 28DB SOT1121A
CLF1G0035-50
CLF1G0035-50
Ampleon USA Inc.
CLF1G0035-50 - 50W BROADBAND RF
BLF7G24LS-140,112
BLF7G24LS-140,112
Ampleon USA Inc.
RF MOSFET LDMOS 28V SOT502B
BLF8G09LS-270GWQ
BLF8G09LS-270GWQ
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT1244C
BLF888ESU
BLF888ESU
Ampleon USA Inc.
RF FET LDMOS 104V 17DB SOT539B
BLF6G21-10G,112
BLF6G21-10G,112
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT538A
BLF245,112
BLF245,112
Ampleon USA Inc.
RF FET NCHA 65V 15.5DB SOT123A
BLF2043F,135
BLF2043F,135
Ampleon USA Inc.
RF FET LDMOS 65V 11DB SOT467C
BLF6G38-25,112
BLF6G38-25,112
Ampleon USA Inc.
RF FET LDMOS 65V 15DB SOT608A
BLF6G20S-45,112
BLF6G20S-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 19.2DB SOT608B
BLF6G20S-45,118
BLF6G20S-45,118
Ampleon USA Inc.
RF FET LDMOS 65V 19.2DB SOT608B
BLF7G22LS-200,112
BLF7G22LS-200,112
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B