CLF1G0060-10
  • Share:

Ampleon USA Inc. CLF1G0060-10

Manufacturer No:
CLF1G0060-10
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
CLF1G0060-10 - 10W BROADBAND RF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CLF1G0060-10 and CLF1G0060S-10 are 10 W general purpose broadband GaN (Gallium Nitride) High Electron Mobility Transistors (HEMTs) produced by Ampleon USA Inc. These devices are designed for operation from DC to 6.0 GHz, making them versatile for a wide range of RF applications. They are known for their high voltage operation, excellent ruggedness, and thermally enhanced packaging, which ensures reliable performance under various conditions.

Key Specifications

Parameter Conditions Min Max Unit
f range 0 6000 MHz
P L(1dB) 10 W
V DS P L = 10 W 50 V
η D P L = 10 W 44 52 %
G p P L = 10 W 13.5 16 dB
RL in P L = 10 W -10 dB
t r P L = 10 W 5 ns
t f P L = 10 W 5 ns
V(BR)DSS VGS = -7 V; IDS = 2.4 mA 150 V
VGS -8 3 V
IGF external RG = 5 Ω 3.7 mA mA
Tstg -65 150 °C
Tj 250 °C
Rth(j-c) Tj = 200 °C 4.6 K/W

Key Features

  • Frequency of operation from DC to 6.0 GHz, making it suitable for a wide range of RF applications.
  • 10 W general purpose broadband RF power GaN HEMT, offering high power output.
  • Excellent ruggedness with a VSWR (Voltage Standing Wave Ratio) of 10:1, ensuring robust performance under various load conditions.
  • High voltage operation up to 50 V, which is beneficial for applications requiring high power and efficiency.
  • Thermally enhanced package, which helps in efficient heat dissipation and maintains device reliability.

Applications

  • Commercial wireless infrastructure (Cellular, WiMAX).
  • Radar systems.
  • Broadband general purpose amplifiers.
  • Public mobile radios.
  • Industrial, Scientific, and Medical (ISM) applications.
  • Jammers and EMC testing.
  • Defense applications.

Q & A

  1. Q: What is the frequency range of the CLF1G0060-10?

    A: The CLF1G0060-10 operates from DC to 6.0 GHz.

  2. Q: What is the output power of the CLF1G0060-10?

    A: The output power is 10 W.

  3. Q: What is the supply voltage for the CLF1G0060-10?

    A: The supply voltage is up to 50 V.

  4. Q: What type of package does the CLF1G0060-10 use?

    A: The device is packaged in a SOT-1227A (CDFM2) package.

  5. Q: What are the key applications of the CLF1G0060-10?

    A: Key applications include commercial wireless infrastructure, radar, broadband general purpose amplifiers, public mobile radios, ISM applications, jammers, EMC testing, and defense applications.

  6. Q: What is the thermal resistance from junction to case for the CLF1G0060-10?

    A: The thermal resistance from junction to case (Rth(j-c)) is 4.6 K/W at Tj = 200 °C.

  7. Q: How does the CLF1G0060-10 ensure ruggedness?

    A: The device ensures excellent ruggedness with a VSWR of 10:1, making it robust under various load conditions.

  8. Q: What is the typical drain efficiency of the CLF1G0060-10?

    A: The typical drain efficiency ranges from 42.6% to 52% depending on the operating frequency and conditions.

  9. Q: Is the CLF1G0060-10 suitable for high-power applications?

    A: Yes, the device is designed for high-power applications with its 10 W output and high voltage operation up to 50 V.

  10. Q: Where can I find detailed information and datasheets for the CLF1G0060-10?

    A: Detailed information and datasheets can be found on the official Ampleon website, as well as on distributor websites like Digi-Key and RFMW.

Product Attributes

Transistor Type:GaN HEMT
Frequency:6GHz
Gain:16dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:50 mA
Power - Output:10W
Voltage - Rated:150 V
Package / Case:SOT-1227B
Supplier Device Package:SOT1227B
0 Remaining View Similar

In Stock

$84.71
10

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV30/AA
DD15S2S5WV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S2S5WV50
DD15S2S5WV50
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20J0S/AA
DD15S20J0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HT20/AA
DD26M20HT20/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S10H00/AA
DD26S10H00/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S200T2X
DD26S200T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T2X
DD26S2S50T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T20
DD26S2S50T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200TX
DD44S3200TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20W00/AA
DD26S20W00/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60TX/AA
DD44S32S60TX/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE30
DD26S20WE30
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

A2I25D025GNR1
A2I25D025GNR1
NXP USA Inc.
IC TRANS RF LDMOS
BLF6G10LS-135R,112
BLF6G10LS-135R,112
NXP USA Inc.
RF TRANSISTOR
BLF8G22LS-220J
BLF8G22LS-220J
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
CLF1G0035-100H
CLF1G0035-100H
Ampleon USA Inc.
CLF1G0035-100 - 100W BROADBAND R
BF909WR,115
BF909WR,115
NXP USA Inc.
MOSFET N-CH 7V 40MA SOT343
BLF245,112
BLF245,112
Ampleon USA Inc.
RF FET NCHA 65V 15.5DB SOT123A
PD85004
PD85004
STMicroelectronics
FET RF 40V 870MHZ
BLF6G20S-45,118
BLF6G20S-45,118
Ampleon USA Inc.
RF FET LDMOS 65V 19.2DB SOT608B
BLF7G20LS-250P,118
BLF7G20LS-250P,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539B
BLF6G10S-45K,118
BLF6G10S-45K,118
Ampleon USA Inc.
RF FET LDMOS 65V 23DB SOT608B
BF909AWR,115
BF909AWR,115
NXP USA Inc.
MOSFET N-CH 7V 40MA SOT143R
BF908R,235
BF908R,235
NXP USA Inc.
MOSFET DUAL GATE 12V 40MA SOT143

Related Product By Brand

BLL6H0514-25,112
BLL6H0514-25,112
Ampleon USA Inc.
RF FET LDMOS 100V 21DB SOT467C
BLF578,112
BLF578,112
Ampleon USA Inc.
RF FET LDMOS 110V 24DB SOT539A
BLF884PS,112
BLF884PS,112
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT1121B
BLF6G27-45,112
BLF6G27-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608A
BLF6G10LS-260PRN:1
BLF6G10LS-260PRN:1
Ampleon USA Inc.
RF FET LDMOS 65V 22DB SOT539B
BLF245,112
BLF245,112
Ampleon USA Inc.
RF FET NCHA 65V 15.5DB SOT123A
BLF6G27S-45,118
BLF6G27S-45,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608B
BLF647,112
BLF647,112
Ampleon USA Inc.
RF FET LDMOS 65V 14.5DB SOT540A
BLF6G22-45,135
BLF6G22-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT608A
BLF6G10S-45K,118
BLF6G10S-45K,118
Ampleon USA Inc.
RF FET LDMOS 65V 23DB SOT608B
BLF6G27-10GHJ
BLF6G27-10GHJ
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C
BLM6G22-30G,118
BLM6G22-30G,118
Ampleon USA Inc.
IC AMP W-CDMA 2.11-2.17GHZ 16HSO