CLF1G0060-10
  • Share:

Ampleon USA Inc. CLF1G0060-10

Manufacturer No:
CLF1G0060-10
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
CLF1G0060-10 - 10W BROADBAND RF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CLF1G0060-10 and CLF1G0060S-10 are 10 W general purpose broadband GaN (Gallium Nitride) High Electron Mobility Transistors (HEMTs) produced by Ampleon USA Inc. These devices are designed for operation from DC to 6.0 GHz, making them versatile for a wide range of RF applications. They are known for their high voltage operation, excellent ruggedness, and thermally enhanced packaging, which ensures reliable performance under various conditions.

Key Specifications

Parameter Conditions Min Max Unit
f range 0 6000 MHz
P L(1dB) 10 W
V DS P L = 10 W 50 V
η D P L = 10 W 44 52 %
G p P L = 10 W 13.5 16 dB
RL in P L = 10 W -10 dB
t r P L = 10 W 5 ns
t f P L = 10 W 5 ns
V(BR)DSS VGS = -7 V; IDS = 2.4 mA 150 V
VGS -8 3 V
IGF external RG = 5 Ω 3.7 mA mA
Tstg -65 150 °C
Tj 250 °C
Rth(j-c) Tj = 200 °C 4.6 K/W

Key Features

  • Frequency of operation from DC to 6.0 GHz, making it suitable for a wide range of RF applications.
  • 10 W general purpose broadband RF power GaN HEMT, offering high power output.
  • Excellent ruggedness with a VSWR (Voltage Standing Wave Ratio) of 10:1, ensuring robust performance under various load conditions.
  • High voltage operation up to 50 V, which is beneficial for applications requiring high power and efficiency.
  • Thermally enhanced package, which helps in efficient heat dissipation and maintains device reliability.

Applications

  • Commercial wireless infrastructure (Cellular, WiMAX).
  • Radar systems.
  • Broadband general purpose amplifiers.
  • Public mobile radios.
  • Industrial, Scientific, and Medical (ISM) applications.
  • Jammers and EMC testing.
  • Defense applications.

Q & A

  1. Q: What is the frequency range of the CLF1G0060-10?

    A: The CLF1G0060-10 operates from DC to 6.0 GHz.

  2. Q: What is the output power of the CLF1G0060-10?

    A: The output power is 10 W.

  3. Q: What is the supply voltage for the CLF1G0060-10?

    A: The supply voltage is up to 50 V.

  4. Q: What type of package does the CLF1G0060-10 use?

    A: The device is packaged in a SOT-1227A (CDFM2) package.

  5. Q: What are the key applications of the CLF1G0060-10?

    A: Key applications include commercial wireless infrastructure, radar, broadband general purpose amplifiers, public mobile radios, ISM applications, jammers, EMC testing, and defense applications.

  6. Q: What is the thermal resistance from junction to case for the CLF1G0060-10?

    A: The thermal resistance from junction to case (Rth(j-c)) is 4.6 K/W at Tj = 200 °C.

  7. Q: How does the CLF1G0060-10 ensure ruggedness?

    A: The device ensures excellent ruggedness with a VSWR of 10:1, making it robust under various load conditions.

  8. Q: What is the typical drain efficiency of the CLF1G0060-10?

    A: The typical drain efficiency ranges from 42.6% to 52% depending on the operating frequency and conditions.

  9. Q: Is the CLF1G0060-10 suitable for high-power applications?

    A: Yes, the device is designed for high-power applications with its 10 W output and high voltage operation up to 50 V.

  10. Q: Where can I find detailed information and datasheets for the CLF1G0060-10?

    A: Detailed information and datasheets can be found on the official Ampleon website, as well as on distributor websites like Digi-Key and RFMW.

Product Attributes

Transistor Type:GaN HEMT
Frequency:6GHz
Gain:16dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:50 mA
Power - Output:10W
Voltage - Rated:150 V
Package / Case:SOT-1227B
Supplier Device Package:SOT1227B
0 Remaining View Similar

In Stock

$84.71
10

Please send RFQ , we will respond immediately.

Same Series
DD62M3200T0/AA
DD62M3200T0/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD62M3200T20/AA
DD62M3200T20/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD15S20LV5S/AA
DD15S20LV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V5S
DD15S200V5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WTS
DD15S20WTS
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10H0S/AA
CBC9W4S10H0S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26M20H00/AA
DD26M20H00/AA
CONN D-SUB HD PLUG 26P SLDR CUP
CBC47W1S100V50
CBC47W1S100V50
CONN D-SUB RCPT 47POS CRIMP
DD26S2S5000
DD26S2S5000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V50
DD26S200V50
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S1000S
CBC46W4S1000S
CONN D-SUB RCPT 46POS CRIMP
DD26S20WE30/AA
DD26S20WE30/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

BLF7G20LS-90P,112
BLF7G20LS-90P,112
NXP USA Inc.
RF PFET, 2-ELEMENT, L BAND, SILI
BLF6G10LS-200RN,11
BLF6G10LS-200RN,11
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT502B
BLF278C
BLF278C
Rochester Electronics, LLC
BLF278C - DUAL PUSH-PULL N-CHANN
CLF1G0035-100
CLF1G0035-100
Rochester Electronics, LLC
CLF1G0035-100 - 100W BROADBAND R
BLF7G20LS-200,112
BLF7G20LS-200,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
BLF7G22LS-130,118
BLF7G22LS-130,118
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BF909,215
BF909,215
NXP USA Inc.
MOSFET N-CH 7V 40MA SOT143
BF861B,235
BF861B,235
NXP USA Inc.
JFET N-CH 25V 15MA SOT23
BLF6G27LS-75,118
BLF6G27LS-75,118
Ampleon USA Inc.
RF FET LDMOS 65V SOT502B
BLF6G22LS-40P,112
BLF6G22LS-40P,112
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT1121B
MRFE6VP8600HSR5
MRFE6VP8600HSR5
NXP USA Inc.
FET RF 2CH 130V 860MHZ NI1230S
BLF6G10S-45K,112
BLF6G10S-45K,112
Ampleon USA Inc.
RF FET LDMOS 65V 23DB SOT608B

Related Product By Brand

BLF183XRU
BLF183XRU
Ampleon USA Inc.
RF FET LDMOS 135V 28DB SOT1121A
BLF881S,112
BLF881S,112
Ampleon USA Inc.
RF MOSFET LDMOS 50V LDMOST
BLF7G20LS-200,118
BLF7G20LS-200,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
CLF1G0060-10
CLF1G0060-10
Ampleon USA Inc.
CLF1G0060-10 - 10W BROADBAND RF
BLF6G27LS-40P,112
BLF6G27LS-40P,112
Ampleon USA Inc.
RF MOSFET LDMOS DL 28V LDMOST
BLF881,112
BLF881,112
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT467C
BLF6G27-45,112
BLF6G27-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608A
BLF888,112
BLF888,112
Ampleon USA Inc.
RF FET LDMOS 104V 19DB SOT979A
BLF6G27-10G,118
BLF6G27-10G,118
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C
BLF861A,112
BLF861A,112
Ampleon USA Inc.
RF FET LDMOS 65V 14.5DB SOT540A
BLF7G20LS-250P,118
BLF7G20LS-250P,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539B
BLF6G27LS-40PGJ
BLF6G27LS-40PGJ
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121E