CLF1G0060-10
  • Share:

Ampleon USA Inc. CLF1G0060-10

Manufacturer No:
CLF1G0060-10
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
CLF1G0060-10 - 10W BROADBAND RF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CLF1G0060-10 and CLF1G0060S-10 are 10 W general purpose broadband GaN (Gallium Nitride) High Electron Mobility Transistors (HEMTs) produced by Ampleon USA Inc. These devices are designed for operation from DC to 6.0 GHz, making them versatile for a wide range of RF applications. They are known for their high voltage operation, excellent ruggedness, and thermally enhanced packaging, which ensures reliable performance under various conditions.

Key Specifications

Parameter Conditions Min Max Unit
f range 0 6000 MHz
P L(1dB) 10 W
V DS P L = 10 W 50 V
η D P L = 10 W 44 52 %
G p P L = 10 W 13.5 16 dB
RL in P L = 10 W -10 dB
t r P L = 10 W 5 ns
t f P L = 10 W 5 ns
V(BR)DSS VGS = -7 V; IDS = 2.4 mA 150 V
VGS -8 3 V
IGF external RG = 5 Ω 3.7 mA mA
Tstg -65 150 °C
Tj 250 °C
Rth(j-c) Tj = 200 °C 4.6 K/W

Key Features

  • Frequency of operation from DC to 6.0 GHz, making it suitable for a wide range of RF applications.
  • 10 W general purpose broadband RF power GaN HEMT, offering high power output.
  • Excellent ruggedness with a VSWR (Voltage Standing Wave Ratio) of 10:1, ensuring robust performance under various load conditions.
  • High voltage operation up to 50 V, which is beneficial for applications requiring high power and efficiency.
  • Thermally enhanced package, which helps in efficient heat dissipation and maintains device reliability.

Applications

  • Commercial wireless infrastructure (Cellular, WiMAX).
  • Radar systems.
  • Broadband general purpose amplifiers.
  • Public mobile radios.
  • Industrial, Scientific, and Medical (ISM) applications.
  • Jammers and EMC testing.
  • Defense applications.

Q & A

  1. Q: What is the frequency range of the CLF1G0060-10?

    A: The CLF1G0060-10 operates from DC to 6.0 GHz.

  2. Q: What is the output power of the CLF1G0060-10?

    A: The output power is 10 W.

  3. Q: What is the supply voltage for the CLF1G0060-10?

    A: The supply voltage is up to 50 V.

  4. Q: What type of package does the CLF1G0060-10 use?

    A: The device is packaged in a SOT-1227A (CDFM2) package.

  5. Q: What are the key applications of the CLF1G0060-10?

    A: Key applications include commercial wireless infrastructure, radar, broadband general purpose amplifiers, public mobile radios, ISM applications, jammers, EMC testing, and defense applications.

  6. Q: What is the thermal resistance from junction to case for the CLF1G0060-10?

    A: The thermal resistance from junction to case (Rth(j-c)) is 4.6 K/W at Tj = 200 °C.

  7. Q: How does the CLF1G0060-10 ensure ruggedness?

    A: The device ensures excellent ruggedness with a VSWR of 10:1, making it robust under various load conditions.

  8. Q: What is the typical drain efficiency of the CLF1G0060-10?

    A: The typical drain efficiency ranges from 42.6% to 52% depending on the operating frequency and conditions.

  9. Q: Is the CLF1G0060-10 suitable for high-power applications?

    A: Yes, the device is designed for high-power applications with its 10 W output and high voltage operation up to 50 V.

  10. Q: Where can I find detailed information and datasheets for the CLF1G0060-10?

    A: Detailed information and datasheets can be found on the official Ampleon website, as well as on distributor websites like Digi-Key and RFMW.

Product Attributes

Transistor Type:GaN HEMT
Frequency:6GHz
Gain:16dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:50 mA
Power - Output:10W
Voltage - Rated:150 V
Package / Case:SOT-1227B
Supplier Device Package:SOT1227B
0 Remaining View Similar

In Stock

$84.71
10

Please send RFQ , we will respond immediately.

Same Series
DD44S320000
DD44S320000
CONN D-SUB HD RCPT 44P VERT SLDR
DD26M2S5WV5X
DD26M2S5WV5X
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20LV5S
DD15S20LV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z0X
DD15S20Z0X
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z0X/AA
DD15S20Z0X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10H00/AA
CBC13W3S10H00/AA
CONN D-SUB RCPT 13POS CRIMP
CBC13W3S10HT0/AA
CBC13W3S10HT0/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S200V5S/AA
DD15S200V5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200T2X
DD26S200T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50TX/AA
DD26S2S50TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200EX
DD26S200EX
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JVLS
DD15S20JVLS
CONN D-SUB HD RCPT 15P SLDR CUP

Related Product By Categories

MRFE6VP100HR5
MRFE6VP100HR5
NXP USA Inc.
RF MOSFET LDMOS 50V NI780-4
PD55003TR-E
PD55003TR-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO-10
BLF6G27LS-40P,112
BLF6G27LS-40P,112
Ampleon USA Inc.
RF MOSFET LDMOS DL 28V LDMOST
PD55015-E
PD55015-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO-10
PD85035S-E
PD85035S-E
STMicroelectronics
FET RF 40V 870MHZ
BF909,235
BF909,235
NXP USA Inc.
MOSFET N-CH 7V 40MA SOT143
BF909,215
BF909,215
NXP USA Inc.
MOSFET N-CH 7V 40MA SOT143
BF998,235
BF998,235
NXP USA Inc.
MOSFET N-CH 12V 30MA SOT143
BLF6G27-10G,112
BLF6G27-10G,112
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C
BLF6G38-25,112
BLF6G38-25,112
Ampleon USA Inc.
RF FET LDMOS 65V 15DB SOT608A
BLF6G20S-45,118
BLF6G20S-45,118
Ampleon USA Inc.
RF FET LDMOS 65V 19.2DB SOT608B
A2T18H455W23NR6
A2T18H455W23NR6
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO

Related Product By Brand

BLF574XR,112
BLF574XR,112
Ampleon USA Inc.
RF FET LDMOS 110V 23DB SOT1214A
CLF1G0060-10
CLF1G0060-10
Ampleon USA Inc.
CLF1G0060-10 - 10W BROADBAND RF
BLF6G27LS-40P,112
BLF6G27LS-40P,112
Ampleon USA Inc.
RF MOSFET LDMOS DL 28V LDMOST
BLF8G22LS-220U
BLF8G22LS-220U
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
BLF8G20LS-220U
BLF8G20LS-220U
Ampleon USA Inc.
RF FET LDMOS 65V 18.9DB SOT502B
BLF3G21-6,135
BLF3G21-6,135
Ampleon USA Inc.
RF FET LDMOS 65V 15.5DB SOT538A
BLF6G27-10G,118
BLF6G27-10G,118
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C
BLF6G20S-45,112
BLF6G20S-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 19.2DB SOT608B
BLF6G27-45,135
BLF6G27-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608A
BLF7G15LS-300P,118
BLF7G15LS-300P,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539B
BLF7G24LS-140
BLF7G24LS-140
Ampleon USA Inc.
RF FET LDMOS 140W SOT502B
BLM6G22-30G,118
BLM6G22-30G,118
Ampleon USA Inc.
IC AMP W-CDMA 2.11-2.17GHZ 16HSO