Overview
The BSS83,235 is an N-channel enhancement mode MOSFET produced by NXP USA Inc. This transistor is part of the BSS83 series and is known for its low ON resistance and low capacitances, making it suitable for various switching and analog applications. The device is packaged in a SOT143B envelope, which is a surface-mounted package with four leads.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (VDS max.) | 10 | V |
| Source-drain voltage (VSD max.) | 10 | V |
| Drain-substrate voltage (VDB max.) | 15 | V |
| Source-substrate voltage (VSB max.) | 15 | V |
| Drain current (ID max.) | 50 | mA |
| Total power dissipation (Ptot max.) at Tamb = 25 °C | 230 | mW |
| Gate-source threshold voltage (VGS(th)) | < 2.0 | V |
| Drain-source ON-resistance (RDSon) at VGS = 10 V, ID = 0.1 mA | < 45 | Ω |
| Feedback capacitance (Crss) at VGS = VBS = -15 V, VDS = 10 V, f = 1 MHz | 0.6 | pF |
| Junction temperature (Tj max.) | 125 | °C |
| Storage temperature range (Tstg) | -65 to +150 | °C |
Key Features
- Low ON resistance and low capacitances, enhancing switching performance.
- Integrated back-to-back diodes between gate and substrate for protection against excessive input voltages.
- Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type.
- Packaged in a SOT143B surface-mounted package with four leads.
- Drain and source are interchangeable, offering flexibility in circuit design.
Applications
- Analog and/or digital switching.
- Switch drivers.
- General-purpose switching applications where low ON resistance and low capacitance are required.
Q & A
- What is the maximum drain-source voltage for the BSS83,235 MOSFET?
The maximum drain-source voltage (VDS max.) is 10 V.
- What is the maximum drain current for the BSS83,235 MOSFET?
The maximum drain current (ID max.) is 50 mA.
- What is the typical feedback capacitance of the BSS83,235 MOSFET?
The typical feedback capacitance (Crss) is 0.6 pF at VGS = VBS = -15 V, VDS = 10 V, and f = 1 MHz.
- What is the maximum junction temperature for the BSS83,235 MOSFET?
The maximum junction temperature (Tj max.) is 125 °C.
- What type of package does the BSS83,235 MOSFET use?
The BSS83,235 MOSFET is packaged in a SOT143B surface-mounted package with four leads.
- Are the drain and source interchangeable in the BSS83,235 MOSFET?
- What are some common applications for the BSS83,235 MOSFET?
- What is the gate-source threshold voltage for the BSS83,235 MOSFET?
The gate-source threshold voltage (VGS(th)) is less than 2.0 V.
- What is the maximum total power dissipation for the BSS83,235 MOSFET at 25 °C ambient temperature?
The maximum total power dissipation (Ptot max.) at Tamb = 25 °C is 230 mW.
- Is the BSS83,235 MOSFET still in production?
No, the BSS83 MOSFET is no longer manufactured by NXP Semiconductors.
