Overview
The NE5550779A-A is a Silicon Power LDMOS FET produced by California Eastern Laboratories (CEL). This device is designed for high-power applications, particularly in the VHF to UHF frequency bands. It is known for its high output power, high power added efficiency, and high linear gain, making it suitable for various radio system applications.
Key Specifications
| Parameter | Symbol | Test Conditions | MIN. | TYP. | MAX. | Unit |
|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDS | - | - | 30 | V | |
| Gate to Source Voltage | VGS | - | - | 6.0 | V | |
| Drain Current (Continuous) | ID | - | - | 2.1 | A | |
| Drain Current (50% Duty Pulsed) | ID-pulse | - | - | 4.2 | A | |
| Total Power Dissipation | Ptot | - | - | 17.8 | W | |
| Channel Temperature | Tch | - | - | 150 | °C | |
| Storage Temperature | Tstg | -55 | - | 150 | °C | |
| Output Power | Pout | f = 460 MHz, VDS = 7.5 V, IDset = 140 mA, Pin = 25 dBm | 37.0 | 38.5 | - | dBm |
| Power Added Efficiency | ηadd | f = 460 MHz, VDS = 7.5 V, IDset = 140 mA, Pin = 25 dBm | - | 66 | - | % |
| Linear Gain | GL | f = 460 MHz, VDS = 7.5 V, IDset = 140 mA, Pin = 10 dBm | - | 22.0 | - | dB |
Key Features
- High Output Power: Up to 38.5 dBm at 460 MHz with VDS = 7.5 V and IDset = 140 mA.
- High Power Added Efficiency: Typically 66% at 460 MHz with VDS = 7.5 V and IDset = 140 mA.
- High Linear Gain: Typically 22.0 dB at 460 MHz with VDS = 7.5 V and IDset = 140 mA.
- High ESD Tolerance: Enhanced electrostatic discharge protection.
- Suitable for VHF to UHF-Band Class-AB Power Amplifier: Applicable in various radio frequency bands.
Applications
- 150 MHz Band Radio System: Suitable for radio systems operating in the 150 MHz frequency band.
- 460 MHz Band Radio System: Ideal for radio systems operating in the 460 MHz frequency band.
- 900 MHz Band Radio System: Applicable in radio systems operating in the 900 MHz frequency band.
Q & A
- What is the maximum drain to source voltage for the NE5550779A-A?
The maximum drain to source voltage (VDS) is 30 V. - What is the typical output power of the NE5550779A-A at 460 MHz?
The typical output power (Pout) is 38.5 dBm at 460 MHz with VDS = 7.5 V and IDset = 140 mA. - What is the power added efficiency of the NE5550779A-A at 460 MHz?
The power added efficiency (ηadd) is typically 66% at 460 MHz with VDS = 7.5 V and IDset = 140 mA. - What are the typical linear gain values for the NE5550779A-A?
The typical linear gain (GL) is 22.0 dB at 460 MHz with VDS = 7.5 V and IDset = 140 mA. - What are the recommended operating conditions for the drain to source voltage (VDS) and gate to source voltage (VGS)?
The recommended operating range for VDS is – to 9.0 V, and for VGS is 1.65 to 2.85 V. - What is the maximum drain current for the NE5550779A-A?
The maximum continuous drain current (ID) is 2.1 A, and the maximum 50% duty pulsed drain current (ID-pulse) is 4.2 A. - What is the storage temperature range for the NE5550779A-A?
The storage temperature range is -55°C to 150°C. - Is the NE5550779A-A sensitive to electrostatic discharge?
Yes, the device is sensitive to electrostatic discharge and requires proper handling precautions. - What are the typical applications of the NE5550779A-A?
The device is suitable for 150 MHz, 460 MHz, and 900 MHz band radio systems. - Is the NE5550779A-A still in production?
No, the NE5550779A-A is discontinued.
