BLF8G09LS-270GWQ
  • Share:

Ampleon USA Inc. BLF8G09LS-270GWQ

Manufacturer No:
BLF8G09LS-270GWQ
Manufacturer:
Ampleon USA Inc.
Package:
Tube
Description:
RF FET LDMOS 65V 20DB SOT1244C
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF8G09LS-270GWQ is a high-performance LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor manufactured by Ampleon USA Inc. This component is designed for use in high-power RF applications, particularly in the frequency range of 718.5 MHz to 725.5 MHz. Although this product is currently obsolete and no longer manufactured, it remains relevant for existing systems and maintenance purposes.

Key Specifications

ParameterValue
Frequency Range718.5 MHz ~ 725.5 MHz
Voltage - Test28 V
Gain20 dB
Power Output67 W
Package TypeCDFM6

Key Features

  • High power output of 67 W, making it suitable for high-power RF applications.
  • Improved video bandwidth, enhancing performance in base station applications.
  • Operates within a frequency range of 718.5 MHz to 725.5 MHz, which is ideal for various wireless communication systems.
  • LDMOS technology provides high efficiency and reliability.

Applications

The BLF8G09LS-270GWQ is primarily used in base station applications for mobile broadband and other high-power RF systems. It is also suitable for use in wireless communication infrastructure, such as cellular base stations and broadcast transmitters.

Q & A

  1. What is the frequency range of the BLF8G09LS-270GWQ? The frequency range is 718.5 MHz to 725.5 MHz.
  2. What is the power output of this transistor? The power output is 67 W.
  3. What is the voltage rating for this component? The voltage rating is 28 V.
  4. What type of package does the BLF8G09LS-270GWQ use? It uses the CDFM6 package type.
  5. Is the BLF8G09LS-270GWQ still in production? No, this product is obsolete and no longer manufactured.
  6. What technology is used in the BLF8G09LS-270GWQ? It uses LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology.
  7. What are the primary applications of the BLF8G09LS-270GWQ? It is used in base station applications for mobile broadband and other high-power RF systems.
  8. What is the gain of the BLF8G09LS-270GWQ? The gain is 20 dB.
  9. Who is the manufacturer of the BLF8G09LS-270GWQ? The manufacturer is Ampleon USA Inc.
  10. Where can I find detailed specifications for the BLF8G09LS-270GWQ? Detailed specifications can be found on the official Ampleon website, Digi-Key, and other electronic component distributors.

Product Attributes

Transistor Type:LDMOS
Frequency:718.5MHz ~ 725.5MHz
Gain:20dB
Voltage - Test:28 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:2 A
Power - Output:67W
Voltage - Rated:65 V
Package / Case:SOT-1244C
Supplier Device Package:CDFM6
0 Remaining View Similar

In Stock

$73.66
7

Please send RFQ , we will respond immediately.

Same Series
BLF8G09LS-270GWQ
BLF8G09LS-270GWQ
RF FET LDMOS 65V 20DB SOT1244C
BLF8G09LS-270WJ
BLF8G09LS-270WJ
RF FET LDMOS 65V 20DB SOT1244B
BLF8G09LS-270WU
BLF8G09LS-270WU
RF FET LDMOS 65V 20DB SOT1244B

Similar Products

Part Number BLF8G09LS-270GWQ BLF8G09LS-270GWJ
Manufacturer Ampleon USA Inc. Ampleon USA Inc.
Product Status Last Time Buy Last Time Buy
Transistor Type LDMOS LDMOS
Frequency 718.5MHz ~ 725.5MHz 718.5MHz ~ 725.5MHz
Gain 20dB 20dB
Voltage - Test 28 V 28 V
Current Rating (Amps) - -
Noise Figure - -
Current - Test 2 A 2 A
Power - Output 67W 67W
Voltage - Rated 65 V 65 V
Package / Case SOT-1244C SOT-1244C
Supplier Device Package CDFM6 CDFM6

Related Product By Categories

BLF183XRU
BLF183XRU
Ampleon USA Inc.
RF FET LDMOS 135V 28DB SOT1121A
BLF188XRGJ
BLF188XRGJ
Ampleon USA Inc.
RF FET LDMOS 135V 24DB SOT1248C
MRFE6VS25LR5
MRFE6VS25LR5
NXP USA Inc.
FET RF 133V 512MHZ NI360L
BLF7G20LS-90P,112
BLF7G20LS-90P,112
NXP USA Inc.
RF PFET, 2-ELEMENT, L BAND, SILI
BLF8G20LS-220U
BLF8G20LS-220U
Ampleon USA Inc.
RF FET LDMOS 65V 18.9DB SOT502B
BLF245B,112
BLF245B,112
Ampleon USA Inc.
RF FET 2 NC 65V 18DB SOT279A
BLF6G27-10G,118
BLF6G27-10G,118
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C
BLF647,112
BLF647,112
Ampleon USA Inc.
RF FET LDMOS 65V 14.5DB SOT540A
PD55003STR-E
PD55003STR-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO-10
BF510,215
BF510,215
NXP USA Inc.
RF MOSFET N-CH JFET 10V TO236AB
BLF7G21LS-160P,118
BLF7G21LS-160P,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1121B
A2T07H310-24SR6
A2T07H310-24SR6
NXP USA Inc.
FET RF 2CH 70V 880MHZ

Related Product By Brand

BLF647PS,112
BLF647PS,112
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121B
BLF574,112
BLF574,112
Ampleon USA Inc.
RF FET LDMOS 110V 26.5DB SOT539A
BLF178XR,112
BLF178XR,112
Ampleon USA Inc.
RF MOSFET LDMOS DL 50V SOT539A
BLF184XRGJ
BLF184XRGJ
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214C
BLF7G24LS-100,112
BLF7G24LS-100,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
BLF7G27LS-100,112
BLF7G27LS-100,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
BLF888,112
BLF888,112
Ampleon USA Inc.
RF FET LDMOS 104V 19DB SOT979A
BLF6G27S-45,118
BLF6G27S-45,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608B
BLF6G22-45,135
BLF6G22-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT608A
BLF8G22LS-160BV,11
BLF8G22LS-160BV,11
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1120B
BLF8G22LS-160BV:11
BLF8G22LS-160BV:11
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1120B
BLF6G27LS-40P,118
BLF6G27LS-40P,118
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121B