BLF3G21-6,112
  • Share:

Ampleon USA Inc. BLF3G21-6,112

Manufacturer No:
BLF3G21-6,112
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET LDMOS 65V 15.5DB SOT538A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF3G21-6,112 is a high-performance RF MOSFET transistor manufactured by Ampleon USA Inc. This device is designed for general-purpose wideband applications, particularly in the realm of radio frequency (RF) amplification. It is known for its excellent back-off linearity, easy power control, and high power gain, making it a reliable choice for various RF systems.

Key Specifications

ParameterValue
Voltage Rating26 V
Current Rating90 mA
Frequency RangeUp to 2 GHz
Power Gain15.5 dB
Output Power6 W
Package Type2-CSMD (SOT467C)

Key Features

  • Excellent back-off linearity
  • Easy power control
  • High power gain
  • Excellent ruggedness
  • Excellent thermal stability

Applications

The BLF3G21-6,112 is suitable for a variety of RF applications, including but not limited to:

  • RF amplifiers in wireless communication systems
  • Broadcast transmitters
  • Industrial and medical RF equipment
  • General-purpose wideband amplifiers

Q & A

  1. What is the voltage rating of the BLF3G21-6,112?
    The voltage rating of the BLF3G21-6,112 is 26 V.
  2. What is the current rating of the BLF3G21-6,112?
    The current rating of the BLF3G21-6,112 is 90 mA.
  3. What is the frequency range of the BLF3G21-6,112?
    The frequency range of the BLF3G21-6,112 is up to 2 GHz.
  4. What is the power gain of the BLF3G21-6,112?
    The power gain of the BLF3G21-6,112 is 15.5 dB.
  5. What is the output power of the BLF3G21-6,112?
    The output power of the BLF3G21-6,112 is 6 W.
  6. What package type does the BLF3G21-6,112 use?
    The BLF3G21-6,112 uses a 2-CSMD (SOT467C) package.
  7. What are the key features of the BLF3G21-6,112?
    The key features include excellent back-off linearity, easy power control, high power gain, excellent ruggedness, and excellent thermal stability.
  8. What are some common applications of the BLF3G21-6,112?
    Common applications include RF amplifiers in wireless communication systems, broadcast transmitters, industrial and medical RF equipment, and general-purpose wideband amplifiers.
  9. Who manufactures the BLF3G21-6,112?
    The BLF3G21-6,112 is manufactured by Ampleon USA Inc.
  10. Where can I find the datasheet for the BLF3G21-6,112?
    You can find the datasheet on the official Ampleon website or through authorized distributors like Digi-Key and Lanka Micro.

Product Attributes

Transistor Type:LDMOS
Frequency:2GHz
Gain:15.5dB
Voltage - Test:26 V
Current Rating (Amps):2.3A
Noise Figure:- 
Current - Test:90 mA
Power - Output:6W
Voltage - Rated:65 V
Package / Case:SOT-538A
Supplier Device Package:2-CSMD
0 Remaining View Similar

In Stock

-
324

Please send RFQ , we will respond immediately.

Same Series
BLF3G21-6,135
BLF3G21-6,135
RF FET LDMOS 65V 15.5DB SOT538A

Related Product By Categories

MMBF4416A
MMBF4416A
onsemi
JFET N-CH 35V 15MA SOT23
BLF8G10LS-300PU
BLF8G10LS-300PU
Ampleon USA Inc.
RF FET LDMOS 65V 20.5DB SOT539B
MMBFJ310LT1G
MMBFJ310LT1G
onsemi
RF MOSFET N-CH JFET 10V SOT23
BLF8G09LS-270GWQ
BLF8G09LS-270GWQ
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT1244C
BF861A,215
BF861A,215
NXP USA Inc.
JFET N-CH 25V 6.5MA SOT23
BLF888,112
BLF888,112
Ampleon USA Inc.
RF FET LDMOS 104V 19DB SOT979A
BLF6G38LS-50,118
BLF6G38LS-50,118
Ampleon USA Inc.
RF FET LDMOS 65V 14DB SOT502B
PD55008L-E
PD55008L-E
STMicroelectronics
TRANSISTOR RF 5X5 POWERFLAT
BLF6G27LS-75,118
BLF6G27LS-75,118
Ampleon USA Inc.
RF FET LDMOS 65V SOT502B
BLF6G27-45,135
BLF6G27-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608A
BLF6G27LS-40PHJ
BLF6G27LS-40PHJ
Ampleon USA Inc.
RF FET LDMOS 65V 17DB
BF908R,235
BF908R,235
NXP USA Inc.
MOSFET DUAL GATE 12V 40MA SOT143

Related Product By Brand

BLF888A,112
BLF888A,112
Ampleon USA Inc.
RF FET LDMOS 110V 21DB SOT539A
BLF6G10LS-200RN:11
BLF6G10LS-200RN:11
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT502B
BLF7G20LS-90P,118
BLF7G20LS-90P,118
Ampleon USA Inc.
POWER FIELD-EFFECT TRANSISTOR, N
BLF578,112
BLF578,112
Ampleon USA Inc.
RF FET LDMOS 110V 24DB SOT539A
BLF7G24LS-140,112
BLF7G24LS-140,112
Ampleon USA Inc.
RF MOSFET LDMOS 28V SOT502B
CLF1G0060-10U
CLF1G0060-10U
Ampleon USA Inc.
RF FET HEMT 150V 14.5DB SOT1227A
BLF6G10-45,135
BLF6G10-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 22.5DB SOT608A
BLF2043F,112
BLF2043F,112
Ampleon USA Inc.
RF FET LDMOS 65V 11DB SOT467C
BLF888,112
BLF888,112
Ampleon USA Inc.
RF FET LDMOS 104V 19DB SOT979A
BLF6G38S-25,118
BLF6G38S-25,118
Ampleon USA Inc.
RF FET LDMOS 65V 15DB SOT608B
BLF7G27LS-140,118
BLF7G27LS-140,118
Ampleon USA Inc.
RF FET LDMOS 65V 16DB SOT502B
BLF6G10S-45K,118
BLF6G10S-45K,118
Ampleon USA Inc.
RF FET LDMOS 65V 23DB SOT608B