PD84010-E
  • Share:

STMicroelectronics PD84010-E

Manufacturer No:
PD84010-E
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
FET RF 40V 870MHZ
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PD84010-E is a high-performance RF power transistor designed by STMicroelectronics. It is a common source N-channel, enhancement-mode lateral field-effect transistor (LDMOS FET) optimized for high gain and broadband applications. This transistor is particularly suited for wide-band communication and Industrial, Scientific, and Medical (ISM) applications due to its robust design and reliable performance characteristics.

Key Specifications

ParameterValue
Power Output150 W
Drain-Source Voltage (Vds)28/32 V
Operating FrequencyBroadband
Channel TypeN-channel, enhancement-mode
ConfigurationCommon source
Transistor TypeLDMOS FET

Key Features

  • High gain and broadband capability, making it suitable for a wide range of frequencies.
  • Enhancement-mode operation, which allows for low power consumption in standby mode.
  • Common source configuration, providing high input impedance and low output impedance.
  • Robust design for reliable performance in demanding applications.
  • High power output of 150 W, suitable for high-power RF applications.

Applications

The PD84010-E is designed for various high-power RF applications, including:

  • Wide-band communication systems.
  • Industrial, Scientific, and Medical (ISM) applications.
  • Broadcasting and telecommunications equipment.
  • Radar and military communication systems.

Q & A

  1. What is the PD84010-E? The PD84010-E is a high-performance RF power transistor designed by STMicroelectronics.
  2. What type of transistor is the PD84010-E? It is an N-channel, enhancement-mode lateral field-effect RF power transistor (LDMOS FET).
  3. What is the power output of the PD84010-E? The power output is 150 W.
  4. What are the typical operating voltages for the PD84010-E? The typical operating voltages are 28/32 V.
  5. What are the primary applications of the PD84010-E? It is used in wide-band communication and ISM applications.
  6. What configuration does the PD84010-E use? It uses a common source configuration.
  7. Why is the PD84010-E suitable for broadband applications? It is designed for high gain and broadband capability.
  8. What are the benefits of the enhancement-mode operation in the PD84010-E? Enhancement-mode operation allows for low power consumption in standby mode.
  9. Is the PD84010-E suitable for high-power RF applications? Yes, it is suitable due to its high power output of 150 W.
  10. Where can I find detailed specifications for the PD84010-E? Detailed specifications can be found on the official STMicroelectronics website, as well as on distributor websites like Mouser Electronics.

Product Attributes

Transistor Type:LDMOS
Frequency:870MHz
Gain:16.3dB
Voltage - Test:7.5 V
Current Rating (Amps):8A
Noise Figure:- 
Current - Test:300 mA
Power - Output:2W
Voltage - Rated:40 V
Package / Case:PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Supplier Device Package:PowerSO-10RF (Formed Lead)
0 Remaining View Similar

In Stock

-
51

Please send RFQ , we will respond immediately.

Same Series
PD84010S-E
PD84010S-E
TRANS RF N-CH FET POWERSO-10RF
PD84010TR-E
PD84010TR-E
FET RF 40V 870MHZ 10PWRSOIC

Similar Products

Part Number PD84010-E PD84010S-E
Manufacturer STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete
Transistor Type LDMOS LDMOS
Frequency 870MHz 870MHz
Gain 16.3dB 16.3dB
Voltage - Test 7.5 V 7.5 V
Current Rating (Amps) 8A 8A
Noise Figure - -
Current - Test 300 mA 300 mA
Power - Output 2W 2W
Voltage - Rated 40 V 40 V
Package / Case PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) PowerSO-10 Exposed Bottom Pad
Supplier Device Package PowerSO-10RF (Formed Lead) PowerSO-10RF (Straight Lead)

Related Product By Categories

BLF647P,112
BLF647P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1121A
MRFE6VP100HR5
MRFE6VP100HR5
NXP USA Inc.
RF MOSFET LDMOS 50V NI780-4
BLF7G20LS-200,118
BLF7G20LS-200,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
NE5550779A-T1-A
NE5550779A-T1-A
Renesas Electronics America Inc
RF POWER N-CHANNEL, MOSFET
BF1212WR,115
BF1212WR,115
NXP USA Inc.
MOSFET N-CH DUAL GATE 6V SOT343R
BF998R,235
BF998R,235
NXP USA Inc.
MOSFET N-CH 12V 30MA SOT143
BLF245,112
BLF245,112
Ampleon USA Inc.
RF FET NCHA 65V 15.5DB SOT123A
BF909AR,215
BF909AR,215
NXP USA Inc.
MOSFET N-CH SOT-143R
BLF6G38S-25,118
BLF6G38S-25,118
Ampleon USA Inc.
RF FET LDMOS 65V 15DB SOT608B
NE5550279A-A
NE5550279A-A
CEL
FET RF 30V 900MHZ 79A
AFT05MS003NT1
AFT05MS003NT1
NXP USA Inc.
IC TRANS RF LDMOS
MMBF5485_NB50012
MMBF5485_NB50012
onsemi
IC POWER MANAGEMENT

Related Product By Brand

STPS0560Z
STPS0560Z
STMicroelectronics
DIODE SCHOTTKY 60V 500MA SOD123
ACST1235-8FP
ACST1235-8FP
STMicroelectronics
TRIAC 800V 12A TO-220FPAB
STP24N60M2
STP24N60M2
STMicroelectronics
MOSFET N-CH 600V 18A TO220
STM32F103T6U6A
STM32F103T6U6A
STMicroelectronics
IC MCU 32BIT 32KB FLASH 36VFQFPN
TS914ID
TS914ID
STMicroelectronics
IC CMOS 4 CIRCUIT 14SO
M24512-DRDW3TP/K
M24512-DRDW3TP/K
STMicroelectronics
IC EEPROM 512KBIT I2C 8TSSOP
L9959S-TR-D
L9959S-TR-D
STMicroelectronics
IC H-BRIDGE HIGH SIDE 24PSSOP
VN750SM
VN750SM
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
LD39100PU33R
LD39100PU33R
STMicroelectronics
IC REG LINEAR 3.3V 1A 6DFN
LD1085V18
LD1085V18
STMicroelectronics
IC REG LINEAR 1.8V 3A TO220AB
LPR450AL
LPR450AL
STMicroelectronics
GYRO 500DEG/S 2MV 140HZ 28LGA
ISM330DHCXTR
ISM330DHCXTR
STMicroelectronics
INEMO INERTIAL MODULE: ALWAYS-ON