PD84010-E
  • Share:

STMicroelectronics PD84010-E

Manufacturer No:
PD84010-E
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
FET RF 40V 870MHZ
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PD84010-E is a high-performance RF power transistor designed by STMicroelectronics. It is a common source N-channel, enhancement-mode lateral field-effect transistor (LDMOS FET) optimized for high gain and broadband applications. This transistor is particularly suited for wide-band communication and Industrial, Scientific, and Medical (ISM) applications due to its robust design and reliable performance characteristics.

Key Specifications

ParameterValue
Power Output150 W
Drain-Source Voltage (Vds)28/32 V
Operating FrequencyBroadband
Channel TypeN-channel, enhancement-mode
ConfigurationCommon source
Transistor TypeLDMOS FET

Key Features

  • High gain and broadband capability, making it suitable for a wide range of frequencies.
  • Enhancement-mode operation, which allows for low power consumption in standby mode.
  • Common source configuration, providing high input impedance and low output impedance.
  • Robust design for reliable performance in demanding applications.
  • High power output of 150 W, suitable for high-power RF applications.

Applications

The PD84010-E is designed for various high-power RF applications, including:

  • Wide-band communication systems.
  • Industrial, Scientific, and Medical (ISM) applications.
  • Broadcasting and telecommunications equipment.
  • Radar and military communication systems.

Q & A

  1. What is the PD84010-E? The PD84010-E is a high-performance RF power transistor designed by STMicroelectronics.
  2. What type of transistor is the PD84010-E? It is an N-channel, enhancement-mode lateral field-effect RF power transistor (LDMOS FET).
  3. What is the power output of the PD84010-E? The power output is 150 W.
  4. What are the typical operating voltages for the PD84010-E? The typical operating voltages are 28/32 V.
  5. What are the primary applications of the PD84010-E? It is used in wide-band communication and ISM applications.
  6. What configuration does the PD84010-E use? It uses a common source configuration.
  7. Why is the PD84010-E suitable for broadband applications? It is designed for high gain and broadband capability.
  8. What are the benefits of the enhancement-mode operation in the PD84010-E? Enhancement-mode operation allows for low power consumption in standby mode.
  9. Is the PD84010-E suitable for high-power RF applications? Yes, it is suitable due to its high power output of 150 W.
  10. Where can I find detailed specifications for the PD84010-E? Detailed specifications can be found on the official STMicroelectronics website, as well as on distributor websites like Mouser Electronics.

Product Attributes

Transistor Type:LDMOS
Frequency:870MHz
Gain:16.3dB
Voltage - Test:7.5 V
Current Rating (Amps):8A
Noise Figure:- 
Current - Test:300 mA
Power - Output:2W
Voltage - Rated:40 V
Package / Case:PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Supplier Device Package:PowerSO-10RF (Formed Lead)
0 Remaining View Similar

In Stock

-
51

Please send RFQ , we will respond immediately.

Same Series
PD84010S-E
PD84010S-E
TRANS RF N-CH FET POWERSO-10RF
PD84010TR-E
PD84010TR-E
FET RF 40V 870MHZ 10PWRSOIC

Similar Products

Part Number PD84010-E PD84010S-E
Manufacturer STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete
Transistor Type LDMOS LDMOS
Frequency 870MHz 870MHz
Gain 16.3dB 16.3dB
Voltage - Test 7.5 V 7.5 V
Current Rating (Amps) 8A 8A
Noise Figure - -
Current - Test 300 mA 300 mA
Power - Output 2W 2W
Voltage - Rated 40 V 40 V
Package / Case PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) PowerSO-10 Exposed Bottom Pad
Supplier Device Package PowerSO-10RF (Formed Lead) PowerSO-10RF (Straight Lead)

Related Product By Categories

BLF888BS,112
BLF888BS,112
Ampleon USA Inc.
RF MOSFET LDMOS DL 50V SOT539B
MMRF1015NR1
MMRF1015NR1
NXP USA Inc.
FET RF 68V 960MHZ TO270
MRFE6VP5600HR6
MRFE6VP5600HR6
NXP USA Inc.
FET RF 2CH 130V 230MHZ NI1230
BLF8G10LS-160,112
BLF8G10LS-160,112
NXP USA Inc.
RF PFET, 1-ELEMENT, ULTRA HIGH F
MMBF5485
MMBF5485
onsemi
JFET N-CH 25V 10MA SOT23
BF998E6327HTSA1
BF998E6327HTSA1
Infineon Technologies
MOSFET N-CH 12V 200MA SOT-143
PD55015S-E
PD55015S-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO-10
BLF6G10LS-135RN:11
BLF6G10LS-135RN:11
Ampleon USA Inc.
RF FET LDMOS 65V 21DB SOT502B
PD57006-E
PD57006-E
STMicroelectronics
FET RF 65V 945MHZ PWRSO-10
PD57006S
PD57006S
STMicroelectronics
FET RF 65V 945MHZ PWRSO-10
NE5550779A-A
NE5550779A-A
CEL
FET RF 30V 900MHZ 79A
BF1107,235
BF1107,235
NXP USA Inc.
MOSFET N-CH 3V 10MA SOT23

Related Product By Brand

SMA6J8.5CA-TR
SMA6J8.5CA-TR
STMicroelectronics
TVS DIODE 8.5VWM 18.7VC SMA
STPS2H100U
STPS2H100U
STMicroelectronics
DIODE SCHOTTKY 100V 2A SMB
BTA08-600CWRG
BTA08-600CWRG
STMicroelectronics
TRIAC ALTERNISTOR 600V TO220AB
BTB16-800BWRG
BTB16-800BWRG
STMicroelectronics
TRIAC ALTERNISTOR 800V TO220AB
STD10NF30
STD10NF30
STMicroelectronics
MOSFET N-CHANNEL 300V 10A DPAK
STM32F334K8T6TR
STM32F334K8T6TR
STMicroelectronics
IC MCU 32BIT 64KB FLASH 32LQFP
STM32L451RET6
STM32L451RET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 64LQFP
STM32F427VGT6TR
STM32F427VGT6TR
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
TDA7498LTR
TDA7498LTR
STMicroelectronics
IC AMP D STEREO 80W POWERSSO36
VNQ6040S-E
VNQ6040S-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO36
L6599ATDTR
L6599ATDTR
STMicroelectronics
IC RESONANT CONVRTR CTRLR 16SOIC
PSD813F2A-90M
PSD813F2A-90M
STMicroelectronics
IC FLASH 1M PARALLEL 52PQFP