Overview
The BLF7G22LS-130,118 is a 130 W LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed by Ampleon USA Inc. for base station applications. This transistor operates within the frequency range of 2000 MHz to 2200 MHz, making it suitable for various wireless communication systems, including W-CDMA base stations. The device is known for its excellent ruggedness, high efficiency, and low memory effects, which are crucial for reliable and efficient RF power amplification.
Key Specifications
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| f range | frequency range | - | 2000 | - | 2200 | MHz |
| P L(3dB) | nominal output power at 3 dB gain compression | Test signal: 2-c W-CDMA | - | 130 | - | W |
| G p | power gain | P L(AV) = 30 W; V DS = 28 V | 17 | 18.5 | - | dB |
| RL in | input return loss | P L(AV) = 30 W; V DS = 28 V; I Dq = 950 mA | -15 | -9 | - | dB |
| η D | drain efficiency | P L(AV) = 30 W; V DS = 28 V; I Dq = 950 mA | 29 | 32 | - | % |
| P L(AV) | average output power | - | - | 30 | - | W |
| ACPR | adjacent channel power ratio | P L(AV) = 30 W; V DS = 28 V; 2110 MHz ≤ f ≤ 2170 MHz; I Dq = 950 mA | -31 | -28 | - | dBc |
Key Features
- Excellent Ruggedness: The BLF7G22LS-130,118 is designed to withstand harsh operating conditions, ensuring reliable performance.
- Low Memory Effects: This feature provides excellent digital pre-distortion capability, which is essential for modern wireless communication systems.
- High Efficiency: The transistor offers high efficiency, which helps in reducing power consumption and heat generation.
- Internally Matched: The device is internally matched for ease of use, simplifying the design and implementation process.
- Integrated ESD Protection: Built-in ESD protection enhances the device's durability and reliability.
- Low Rth: The low thermal resistance (Rth) ensures excellent thermal stability.
- Lower Output Capacitance: This feature improves performance in Doherty applications.
- Compliance with RoHS Directive: The device is compliant with Directive 2002/95/EC, regarding the Restriction of Hazardous Substances.
Applications
- RF Power Amplifiers for W-CDMA Base Stations: The BLF7G22LS-130,118 is specifically designed for use in W-CDMA base stations, operating within the 2000 MHz to 2200 MHz frequency range.
- Multicarrier Applications: It is suitable for multicarrier applications within the same frequency range, making it versatile for various wireless infrastructure needs.
Q & A
- What is the frequency range of the BLF7G22LS-130,118 transistor?
The frequency range of the BLF7G22LS-130,118 transistor is from 2000 MHz to 2200 MHz. - What is the nominal output power at 3 dB gain compression for this transistor?
The nominal output power at 3 dB gain compression is 130 W. - What are the key features of the BLF7G22LS-130,118 transistor?
The key features include excellent ruggedness, low memory effects, high efficiency, internally matched, integrated ESD protection, low Rth, and lower output capacitance. - What are the typical applications of the BLF7G22LS-130,118 transistor?
The typical applications include RF power amplifiers for W-CDMA base stations and multicarrier applications within the 2000 MHz to 2200 MHz frequency range. - Is the BLF7G22LS-130,118 compliant with any environmental directives?
Yes, it is compliant with Directive 2002/95/EC regarding the Restriction of Hazardous Substances (RoHS). - What is the package type of the BLF7G22LS-130,118 transistor?
The package type is SOT502B. - What is the typical drain efficiency of the BLF7G22LS-130,118 transistor?
The typical drain efficiency is 32%. - What is the input return loss of the BLF7G22LS-130,118 transistor?
The input return loss is typically -9 dB. - Does the BLF7G22LS-130,118 have integrated ESD protection?
Yes, it has integrated ESD protection. - What is the average output power of the BLF7G22LS-130,118 transistor?
The average output power is 30 W.
