Overview
The MMBF4416A is an N-Channel RF Amplifier transistor manufactured by onsemi. This device is designed for use in RF amplifier applications and is sourced from onsemi's Process 50. It is a Pb-Free and Halide Free device, making it environmentally friendly. The MMBF4416A is packaged in a SOT-23 case, which is suitable for surface mount applications. This transistor is known for its high performance and reliability in various RF circuits.
Key Specifications
| Parameter | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Drain-Gate Voltage | VDG | - | - | 35 | V |
| Gate-Source Voltage | VGS | -35 | - | - | V |
| Forward Gate Current | IGF | - | - | 10 | mA |
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | - | 150 | °C |
| Total Device Dissipation | PD | - | - | 225 | mW |
| Thermal Resistance, Junction-to-Ambient | RJA | - | - | 556 | °C/W |
| Gate-Source Breakdown Voltage | V(BR)GSS | -35 | - | - | V |
| Gate Reverse Current | IGSS | - | - | -100 | pA |
| Gate-Source Cut-off Voltage | VGS(off) | -2.5 | - | -6.0 | V |
| Zero-Gate Voltage Drain Current | IDSS | 5 | - | 15 | mA |
| Forward Transfer Admittance | gfs | 4500 | - | 7500 | μmhos |
| Input Capacitance | Ciss | - | - | 4.0 | pF |
| Reverse Transfer Capacitance | Crss | - | - | 0.8 | pF |
| Output Capacitance | Coss | - | - | 2.0 | pF |
| Noise Figure | NF | - | - | 4.0 | dB |
Key Features
- RF Amplifier Design: Specifically designed for RF amplifier applications.
- Pb-Free and Halide Free: Environmentally friendly packaging.
- SOT-23 Package: Suitable for surface mount applications.
- High Performance: Offers high forward transfer admittance and low noise figure.
- Wide Operating Temperature Range: Operates from -55°C to +150°C.
- Low Power Dissipation: Maximum total device dissipation of 225 mW.
Applications
- RF Amplifiers: Ideal for use in RF amplifier circuits due to its high performance and low noise characteristics.
- Communication Systems: Suitable for use in various communication systems requiring high-frequency amplification.
- Electronic Switching: Can be used in electronic switching applications due to its fast switching times.
- General Purpose Amplification: Can be used in general-purpose amplification circuits where high gain and low noise are required.
Q & A
- What is the MMBF4416A used for?
The MMBF4416A is primarily used as an N-Channel RF Amplifier transistor in various RF circuits.
- What is the maximum drain-gate voltage for the MMBF4416A?
The maximum drain-gate voltage (VDG) is 35 V.
- What is the operating temperature range of the MMBF4416A?
The operating temperature range is from -55°C to +150°C.
- What is the maximum power dissipation of the MMBF4416A?
The maximum total device dissipation (PD) is 225 mW.
- Is the MMBF4416A Pb-Free and Halide Free?
Yes, the MMBF4416A is Pb-Free and Halide Free.
- What is the typical noise figure of the MMBF4416A?
The typical noise figure (NF) is 4.0 dB.
- What is the forward transfer admittance of the MMBF4416A?
The forward transfer admittance (gfs) ranges from 4500 to 7500 μmhos.
- What package type is the MMBF4416A available in?
The MMBF4416A is available in a SOT-23 package.
- What are the key applications of the MMBF4416A?
The MMBF4416A is ideal for RF amplifiers, communication systems, electronic switching, and general-purpose amplification.
- What is the gate-source cut-off voltage of the MMBF4416A?
The gate-source cut-off voltage (VGS(off)) ranges from -2.5 V to -6.0 V.
