Overview
The BLF6G27S-45,112 is a high-performance LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed and manufactured by Ampleon USA Inc., a leading provider of RF power solutions. This transistor is specifically tailored for base station applications, operating within the frequency range of 2500 MHz to 2700 MHz, making it ideal for WiMAX and other wireless communication systems.
Key Specifications
| Parameter | Value |
|---|---|
| Part Number | BLF6G27S-45,112 |
| Manufacturer | Ampleon USA Inc. |
| Package | SOT608B |
| Power Output | 45 W |
| Frequency Range | 2500 MHz to 2700 MHz |
| Voltage | 65 V |
| Gain | 18 dB |
| Thermal Resistance | 0.35 K/W (typical) |
Key Features
- High power output of 45 W, making it suitable for high-power base station applications.
- Operates within the frequency range of 2500 MHz to 2700 MHz, ideal for WiMAX and similar wireless communication systems.
- High gain of 18 dB, ensuring efficient signal amplification.
- LDMOS technology provides high efficiency and reliability.
- Compact SOT608B package, facilitating ease of integration into various RF systems.
Applications
The BLF6G27S-45,112 is primarily used in base station applications for wireless communication systems, including but not limited to:
- WiMAX base stations.
- Cellular base stations.
- Broadcast transmitters.
- RF power amplifiers in various communication systems.
Q & A
- What is the power output of the BLF6G27S-45,112 transistor?
The power output of the BLF6G27S-45,112 transistor is 45 W. - What is the frequency range of the BLF6G27S-45,112 transistor?
The frequency range of the BLF6G27S-45,112 transistor is from 2500 MHz to 2700 MHz. - What is the typical gain of the BLF6G27S-45,112 transistor?
The typical gain of the BLF6G27S-45,112 transistor is 18 dB. - What is the voltage rating of the BLF6G27S-45,112 transistor?
The voltage rating of the BLF6G27S-45,112 transistor is 65 V. - In what package is the BLF6G27S-45,112 transistor available?
The BLF6G27S-45,112 transistor is available in the SOT608B package. - What technology is used in the BLF6G27S-45,112 transistor?
The BLF6G27S-45,112 transistor uses LDMOS technology. - What are the primary applications of the BLF6G27S-45,112 transistor?
The primary applications include WiMAX base stations, cellular base stations, broadcast transmitters, and RF power amplifiers. - Who manufactures the BLF6G27S-45,112 transistor?
The BLF6G27S-45,112 transistor is manufactured by Ampleon USA Inc. - What is the thermal resistance of the BLF6G27S-45,112 transistor?
The thermal resistance of the BLF6G27S-45,112 transistor is typically 0.35 K/W. - Where can I find detailed specifications and datasheets for the BLF6G27S-45,112 transistor?
Detailed specifications and datasheets can be found on the official Ampleon website, as well as through distributors like Digi-Key and Ariat-Tech.
