BLF7G20LS-200,112
  • Share:

Ampleon USA Inc. BLF7G20LS-200,112

Manufacturer No:
BLF7G20LS-200,112
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET LDMOS 65V 18DB SOT502B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF7G20LS-200,112 is a high-performance RF power transistor manufactured by Ampleon USA Inc. This device is designed for use in various RF amplifier applications, particularly in the mobile broadband sector. It is known for its excellent pre-distortability, internal matching, and robust design, making it a reliable choice for high-power RF systems.

Key Specifications

ParameterValue
TechnologyLDMOS
Frequency Range1.81 GHz ~ 1.88 GHz
Gain18 dB
Voltage - Rated65 V
Current - Test1.62 A
Power - Output55 W
Mounting TypeChassis Mount
FET TechnologyMetal-Oxide Semiconductor
Operating ModeEnhancement Mode
Package StyleFlange Mount
Polarity/Channel TypeN-Channel

Key Features

  • Designed for low memory effects, providing excellent pre-distortability
  • Internally matched for ease of use
  • Excellent ruggedness and reliability
  • Integrated ESD protection
  • High power output of 55 W
  • Operates in the frequency range of 1.81 GHz to 1.88 GHz

Applications

The BLF7G20LS-200,112 is primarily used in RF amplifier applications within the mobile broadband sector. It is suitable for base stations, cellular infrastructure, and other high-power RF systems where reliability and performance are critical.

Q & A

  1. What is the technology used in the BLF7G20LS-200,112? The technology used is LDMOS (Laterally Diffused Metal Oxide Semiconductor).
  2. What is the frequency range of the BLF7G20LS-200,112? The frequency range is from 1.81 GHz to 1.88 GHz.
  3. What is the gain of the BLF7G20LS-200,112? The gain is 18 dB.
  4. What is the rated voltage of the BLF7G20LS-200,112? The rated voltage is 65 V.
  5. What is the maximum current of the BLF7G20LS-200,112 during testing? The maximum current during testing is 1.62 A.
  6. What is the power output of the BLF7G20LS-200,112? The power output is 55 W.
  7. What type of mounting does the BLF7G20LS-200,112 use? It uses chassis mounting.
  8. What is the FET technology of the BLF7G20LS-200,112? The FET technology is Metal-Oxide Semiconductor.
  9. What is the operating mode of the BLF7G20LS-200,112? The operating mode is Enhancement Mode.
  10. What are the key features of the BLF7G20LS-200,112? Key features include low memory effects, internal matching, excellent ruggedness, and integrated ESD protection.

Product Attributes

Transistor Type:LDMOS
Frequency:1.81GHz ~ 1.88GHz
Gain:18dB
Voltage - Test:28 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:1.62 A
Power - Output:55W
Voltage - Rated:65 V
Package / Case:SOT-502B
Supplier Device Package:SOT502B
0 Remaining View Similar

In Stock

$90.36
6

Please send RFQ , we will respond immediately.

Same Series
BLF7G20LS-200,112
BLF7G20LS-200,112
RF FET LDMOS 65V 18DB SOT502B
BLF7G20L-200,112
BLF7G20L-200,112
RF FET LDMOS 65V 18DB SOT502A
BLF7G20L-200,118
BLF7G20L-200,118
RF FET LDMOS 65V 18DB SOT502A

Similar Products

Part Number BLF7G20LS-200,112 BLF7G20LS-200,118 BLF7G22LS-200,112 BLF7G20L-200,112
Manufacturer Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc.
Product Status Last Time Buy Last Time Buy Obsolete Obsolete
Transistor Type LDMOS LDMOS LDMOS LDMOS
Frequency 1.81GHz ~ 1.88GHz 1.81GHz ~ 1.88GHz 2.11GHz ~ 2.17GHz 1.81GHz ~ 1.88GHz
Gain 18dB 18dB 18.5dB 18dB
Voltage - Test 28 V 28 V 28 V 28 V
Current Rating (Amps) - - - -
Noise Figure - - - -
Current - Test 1.62 A 1.62 A 1.62 A 1.62 A
Power - Output 55W 55W 55W 55W
Voltage - Rated 65 V 65 V 65 V 65 V
Package / Case SOT-502B SOT-502B SOT-502B SOT-502A
Supplier Device Package SOT502B SOT502B SOT502B SOT502A

Related Product By Categories

MRFE6VP100HR5
MRFE6VP100HR5
NXP USA Inc.
RF MOSFET LDMOS 50V NI780-4
BLF884P,112
BLF884P,112
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT1121A
BLF7G10LS-250,118
BLF7G10LS-250,118
Ampleon USA Inc.
RF FET LDMOS 65V 19.5DB SOT502B
BLF7G24LS-100,112
BLF7G24LS-100,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
BLF647PSJ
BLF647PSJ
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121B
BLS6G3135S-120,112
BLS6G3135S-120,112
Ampleon USA Inc.
RF FET LDMOS 60V 11DB SOT502B
BLF7G22LS-130,118
BLF7G22LS-130,118
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF7G22LS-130,112
BLF7G22LS-130,112
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BF909,215
BF909,215
NXP USA Inc.
MOSFET N-CH 7V 40MA SOT143
BF908WR,115
BF908WR,115
NXP USA Inc.
MOSFET NCH DUAL GATE 12V CMPAK-4
BF1107,215
BF1107,215
NXP USA Inc.
MOSFET N-CH 3V 10MA SOT23
BLF6G27LS-40PHJ
BLF6G27LS-40PHJ
Ampleon USA Inc.
RF FET LDMOS 65V 17DB

Related Product By Brand

BLF184XRU
BLF184XRU
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214A
BLP7G22-10Z
BLP7G22-10Z
Ampleon USA Inc.
RF FET LDMOS 65V 16DB 12VDFN
BLF7G20LS-90P,118
BLF7G20LS-90P,118
Ampleon USA Inc.
POWER FIELD-EFFECT TRANSISTOR, N
BLF8G09LS-270GWQ
BLF8G09LS-270GWQ
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT1244C
BLF7G27LS-150P,118
BLF7G27LS-150P,118
Ampleon USA Inc.
RF FET LDMOS 65V 16DB SOT539B
BLF871,112
BLF871,112
Ampleon USA Inc.
RF FET LDMOS 89V 19DB SOT467C
BLF6G10LS-260PRN,1
BLF6G10LS-260PRN,1
Ampleon USA Inc.
RF FET LDMOS 65V 22DB SOT539B
BLF3G21-6,135
BLF3G21-6,135
Ampleon USA Inc.
RF FET LDMOS 65V 15.5DB SOT538A
BLF6G20LS-110,112
BLF6G20LS-110,112
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT502B
BLF7G20LS-250P,118
BLF7G20LS-250P,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539B
BLF7G27LS-140,118
BLF7G27LS-140,118
Ampleon USA Inc.
RF FET LDMOS 65V 16DB SOT502B
BLM6G22-30G,118
BLM6G22-30G,118
Ampleon USA Inc.
IC AMP W-CDMA 2.11-2.17GHZ 16HSO