BLF184XRGQ
  • Share:

Ampleon USA Inc. BLF184XRGQ

Manufacturer No:
BLF184XRGQ
Manufacturer:
Ampleon USA Inc.
Package:
Tube
Description:
RF FET LDMOS 135V 23DB SOT1214C
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF184XRGQ is a 700 W extremely rugged LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed by Ampleon USA Inc. This device is optimized for broadcast and industrial applications, operating within the frequency range of HF to 600 MHz. It is known for its high efficiency, excellent thermal stability, and robust design, making it suitable for demanding environments.

Key Specifications

SymbolParameterConditionsMinTyp/NomMaxUnit
f rangefrequency range10600MHz
P L(1dB)nominal output power at 1 dB gain compressionTest signal: Pulsed RF700W
G ppower gainP L = 700 W; V DS = 50 V22.823.9dB
RL ininput return lossP L = 700 W; V DS = 50 V; I Dq = 100 mA-20-13dB
η Ddrain efficiencyP L = 700 W; V DS = 50 V; f = 108 MHz; I Dq = 100 mA7173.5%

Key Features

  • Easy power control
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (HF to 600 MHz)
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

  • Industrial, scientific and medical applications
  • Broadcast transmitter applications

Q & A

  1. What is the BLF184XRGQ used for? The BLF184XRGQ is used for broadcast and industrial applications, particularly in the HF to 600 MHz frequency range.
  2. What is the nominal output power of the BLF184XRGQ? The nominal output power at 1 dB gain compression is 700 W.
  3. What are the key features of the BLF184XRGQ? Key features include easy power control, integrated ESD protection, excellent ruggedness, high efficiency, and excellent thermal stability.
  4. What frequency range does the BLF184XRGQ operate in? The BLF184XRGQ operates in the frequency range of HF to 600 MHz.
  5. Is the BLF184XRGQ RoHS compliant? Yes, the BLF184XRGQ is compliant to Directive 2002/95/EC regarding Restriction of Hazardous Substances (RoHS).
  6. What are the typical applications of the BLF184XRGQ? Typical applications include industrial, scientific and medical applications, as well as broadcast transmitter applications.
  7. What is the power gain of the BLF184XRGQ? The power gain is typically 23.9 dB under specified conditions.
  8. What is the input return loss of the BLF184XRGQ? The input return loss is typically -13 dB under specified conditions.
  9. What is the drain efficiency of the BLF184XRGQ? The drain efficiency is typically 73.5% under specified conditions.
  10. Who is the manufacturer of the BLF184XRGQ? The BLF184XRGQ is manufactured by Ampleon USA Inc.

Product Attributes

Transistor Type:LDMOS (Dual), Common Source
Frequency:108MHz
Gain:23.9dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:100 mA
Power - Output:700W
Voltage - Rated:135 V
Package / Case:SOT-1214C
Supplier Device Package:SOT1214C
0 Remaining View Similar

In Stock

$165.24
3

Please send RFQ , we will respond immediately.

Same Series
BLF184XRGQ
BLF184XRGQ
RF FET LDMOS 135V 23DB SOT1214C

Similar Products

Part Number BLF184XRGQ BLF184XRGJ
Manufacturer Ampleon USA Inc. Ampleon USA Inc.
Product Status Active Active
Transistor Type LDMOS (Dual), Common Source LDMOS (Dual), Common Source
Frequency 108MHz 108MHz
Gain 23.9dB 23.9dB
Voltage - Test 50 V 50 V
Current Rating (Amps) - -
Noise Figure - -
Current - Test 100 mA 100 mA
Power - Output 700W 700W
Voltage - Rated 135 V 135 V
Package / Case SOT-1214C SOT-1214C
Supplier Device Package SOT1214C SOT1214C

Related Product By Categories

2SK3557-7-TB-E
2SK3557-7-TB-E
onsemi
RF MOSFET N-CH JFET 5V 3CP
BLF177R
BLF177R
Ampleon USA Inc.
HF/VHF POWER VDMOS TRANSISTOR (
BLF871S,112
BLF871S,112
Ampleon USA Inc.
RF FET LDMOS 89V 19DB SOT467B
PD57045-E
PD57045-E
STMicroelectronics
FET RF 65V 945MHZ PWRSO-10
BLF8G09LS-270GWQ
BLF8G09LS-270GWQ
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT1244C
BLF7G27LS-100,118
BLF7G27LS-100,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
BF998E6327
BF998E6327
Infineon Technologies
BF998 - RF SMALL SIGNAL TRANSIST
BLF6G27S-45,112
BLF6G27S-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608B
BLF878,112
BLF878,112
Ampleon USA Inc.
RF FET LDMOS 89V 21DB SOT979A
BLF6G22-45,135
BLF6G22-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT608A
BLF640U
BLF640U
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT538A
A2T07H310-24SR6
A2T07H310-24SR6
NXP USA Inc.
FET RF 2CH 70V 880MHZ

Related Product By Brand

LYE16350XH
LYE16350XH
Ampleon USA Inc.
LYE16350XH - RF POWER TRANSISTOR
BLF888A,112
BLF888A,112
Ampleon USA Inc.
RF FET LDMOS 110V 21DB SOT539A
BLF574,112
BLF574,112
Ampleon USA Inc.
RF FET LDMOS 110V 26.5DB SOT539A
BLF7G20LS-90P,118
BLF7G20LS-90P,118
Ampleon USA Inc.
POWER FIELD-EFFECT TRANSISTOR, N
BLF8G10LS-300PU
BLF8G10LS-300PU
Ampleon USA Inc.
RF FET LDMOS 65V 20.5DB SOT539B
BLF7G27LS-100,118
BLF7G27LS-100,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
BLF578XRS,112
BLF578XRS,112
Ampleon USA Inc.
RF FET LDMOS 110V 23.5DB SOT539B
BLF6G21-10G,135
BLF6G21-10G,135
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT538A
BLF3G21-30,112
BLF3G21-30,112
Ampleon USA Inc.
RF FET LDMOS 65V 13.5DB SOT467C
BLF278,112
BLF278,112
Ampleon USA Inc.
RF FET 2 NC 125V 22DB SOT262A1
BLF7G27LS-140,118
BLF7G27LS-140,118
Ampleon USA Inc.
RF FET LDMOS 65V 16DB SOT502B
BLF6G10S-45K,112
BLF6G10S-45K,112
Ampleon USA Inc.
RF FET LDMOS 65V 23DB SOT608B