BLF184XRGQ
  • Share:

Ampleon USA Inc. BLF184XRGQ

Manufacturer No:
BLF184XRGQ
Manufacturer:
Ampleon USA Inc.
Package:
Tube
Description:
RF FET LDMOS 135V 23DB SOT1214C
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF184XRGQ is a 700 W extremely rugged LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed by Ampleon USA Inc. This device is optimized for broadcast and industrial applications, operating within the frequency range of HF to 600 MHz. It is known for its high efficiency, excellent thermal stability, and robust design, making it suitable for demanding environments.

Key Specifications

SymbolParameterConditionsMinTyp/NomMaxUnit
f rangefrequency range10600MHz
P L(1dB)nominal output power at 1 dB gain compressionTest signal: Pulsed RF700W
G ppower gainP L = 700 W; V DS = 50 V22.823.9dB
RL ininput return lossP L = 700 W; V DS = 50 V; I Dq = 100 mA-20-13dB
η Ddrain efficiencyP L = 700 W; V DS = 50 V; f = 108 MHz; I Dq = 100 mA7173.5%

Key Features

  • Easy power control
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (HF to 600 MHz)
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

  • Industrial, scientific and medical applications
  • Broadcast transmitter applications

Q & A

  1. What is the BLF184XRGQ used for? The BLF184XRGQ is used for broadcast and industrial applications, particularly in the HF to 600 MHz frequency range.
  2. What is the nominal output power of the BLF184XRGQ? The nominal output power at 1 dB gain compression is 700 W.
  3. What are the key features of the BLF184XRGQ? Key features include easy power control, integrated ESD protection, excellent ruggedness, high efficiency, and excellent thermal stability.
  4. What frequency range does the BLF184XRGQ operate in? The BLF184XRGQ operates in the frequency range of HF to 600 MHz.
  5. Is the BLF184XRGQ RoHS compliant? Yes, the BLF184XRGQ is compliant to Directive 2002/95/EC regarding Restriction of Hazardous Substances (RoHS).
  6. What are the typical applications of the BLF184XRGQ? Typical applications include industrial, scientific and medical applications, as well as broadcast transmitter applications.
  7. What is the power gain of the BLF184XRGQ? The power gain is typically 23.9 dB under specified conditions.
  8. What is the input return loss of the BLF184XRGQ? The input return loss is typically -13 dB under specified conditions.
  9. What is the drain efficiency of the BLF184XRGQ? The drain efficiency is typically 73.5% under specified conditions.
  10. Who is the manufacturer of the BLF184XRGQ? The BLF184XRGQ is manufactured by Ampleon USA Inc.

Product Attributes

Transistor Type:LDMOS (Dual), Common Source
Frequency:108MHz
Gain:23.9dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:100 mA
Power - Output:700W
Voltage - Rated:135 V
Package / Case:SOT-1214C
Supplier Device Package:SOT1214C
0 Remaining View Similar

In Stock

$165.24
3

Please send RFQ , we will respond immediately.

Same Series
BLF184XRGJ
BLF184XRGJ
RF FET LDMOS 135V 23DB SOT1214C

Similar Products

Part Number BLF184XRGQ BLF184XRGJ
Manufacturer Ampleon USA Inc. Ampleon USA Inc.
Product Status Active Active
Transistor Type LDMOS (Dual), Common Source LDMOS (Dual), Common Source
Frequency 108MHz 108MHz
Gain 23.9dB 23.9dB
Voltage - Test 50 V 50 V
Current Rating (Amps) - -
Noise Figure - -
Current - Test 100 mA 100 mA
Power - Output 700W 700W
Voltage - Rated 135 V 135 V
Package / Case SOT-1214C SOT-1214C
Supplier Device Package SOT1214C SOT1214C

Related Product By Categories

BLF8G10LS-160,112
BLF8G10LS-160,112
NXP USA Inc.
RF PFET, 1-ELEMENT, ULTRA HIGH F
PD57006S-E
PD57006S-E
STMicroelectronics
FET RF 65V 945MHZ PWRSO-10
BLF8G20LS-220U
BLF8G20LS-220U
Ampleon USA Inc.
RF FET LDMOS 65V 18.9DB SOT502B
CLF1G0060-10U
CLF1G0060-10U
Ampleon USA Inc.
RF FET HEMT 150V 14.5DB SOT1227A
BLF178XRS,112
BLF178XRS,112
Ampleon USA Inc.
RF FET LDMOS 110V 28DB SOT539B
A2I20H060NR1
A2I20H060NR1
NXP USA Inc.
IC TRANS RF LDMOS
CLF1G0035-100H
CLF1G0035-100H
Ampleon USA Inc.
CLF1G0035-100 - 100W BROADBAND R
BLF6G21-10G,135
BLF6G21-10G,135
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT538A
BLF6G27-10G,112
BLF6G27-10G,112
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C
PD55003
PD55003
STMicroelectronics
FET RF 40V 500MHZ PWRSO-10
BLF6G10S-45,112
BLF6G10S-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 23DB SOT608B
AFT05MS003NT1
AFT05MS003NT1
NXP USA Inc.
IC TRANS RF LDMOS

Related Product By Brand

BLF188XRGJ
BLF188XRGJ
Ampleon USA Inc.
RF FET LDMOS 135V 24DB SOT1248C
BLF183XRSU
BLF183XRSU
Ampleon USA Inc.
RF FET LDMOS 135V 28DB SOT1121B
BLF6G22LS-40P,118
BLF6G22LS-40P,118
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT1121B
CLF1G0035-100PU
CLF1G0035-100PU
Ampleon USA Inc.
RF MOSFET HEMT 50V LDMOST
BLF7G27LS-150P,118
BLF7G27LS-150P,118
Ampleon USA Inc.
RF FET LDMOS 65V 16DB SOT539B
CLF1G0035-100,112
CLF1G0035-100,112
Ampleon USA Inc.
RF MOSFET HEMT 50V SOT467C
BLF7G22LS-130,112
BLF7G22LS-130,112
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF6G10LS-135RN,11
BLF6G10LS-135RN,11
Ampleon USA Inc.
RF FET LDMOS 65V 21DB SOT502B
BLF245,112
BLF245,112
Ampleon USA Inc.
RF FET NCHA 65V 15.5DB SOT123A
BLF3G21-6,135
BLF3G21-6,135
Ampleon USA Inc.
RF FET LDMOS 65V 15.5DB SOT538A
BLF2043F,112
BLF2043F,112
Ampleon USA Inc.
RF FET LDMOS 65V 11DB SOT467C
BLF6G27LS-75,118
BLF6G27LS-75,118
Ampleon USA Inc.
RF FET LDMOS 65V SOT502B