Overview
The BLF8G10LS-160,118 is a high-performance LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed by Ampleon USA Inc. This component is specifically tailored for base station applications, operating within the frequency range of 920 MHz to 960 MHz. Despite being discontinued, it remains a notable example of advanced RF power transistor technology.
Key Specifications
| Symbol | Parameter | Conditions | Min | Max | Unit | |
|---|---|---|---|---|---|---|
| f range | Frequency range | 920 | 960 | MHz | ||
| P L(3dB) | Nominal output power at 3 dB gain compression | Test signal: 2-c W-CDMA | 160 | W | ||
| G p | Power gain | P L(AV) = 35 W; V DS = 30 V; I Dq = 1100 mA | 19 | 19.7 | dB | |
| RL in | Input return loss | P L(AV) = 35 W; V DS = 30 V; I Dq = 1100 mA | -15 | -10 | dB | |
| η D | Drain efficiency | P L(AV) = 35 W; V DS = 30 V; 920 MHz ≤ f ≤ 960 MHz; I Dq = 1100 mA | 27 | 29 | % | |
| P L(AV) | Average output power | 35 | W | |||
| ACPR | Adjacent channel power ratio | P L(AV) = 35 W; V DS = 30 V; 920 MHz ≤ f ≤ 960 MHz; I Dq = 1100 mA | -38 | -34 | dBc |
Key Features
- Excellent Ruggedness: The BLF8G10LS-160,118 is designed to withstand harsh operating conditions, ensuring reliability in demanding applications.
- High Efficiency: It offers high drain efficiency, typically up to 29%, which is crucial for minimizing power consumption and heat generation.
- Low Rth: The transistor features low thermal resistance, providing excellent thermal stability and reliability.
- Broadband Operation: It is designed for broadband operation within the 920 MHz to 960 MHz frequency range, making it versatile for various base station applications.
- Lower Output Capacitance: This feature improves performance in Doherty applications, enhancing overall system efficiency.
- Low Memory Effects: The transistor is designed to minimize memory effects, ensuring excellent pre-distortability and linearity.
- Internally Matched: It is internally matched for ease of use, simplifying the design and implementation process.
- Integrated ESD Protection: Built-in ESD protection enhances the component's robustness against electrostatic discharge.
- RoHS Compliance: The BLF8G10LS-160,118 is compliant with the Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC, ensuring environmental sustainability.
Applications
- RF Power Amplifiers for W-CDMA Base Stations: This transistor is specifically designed for use in RF power amplifiers in W-CDMA base stations, where high power and efficiency are critical.
- Multicarrier Applications: It is suitable for multicarrier applications within the 920 MHz to 960 MHz frequency range, making it a versatile choice for various wireless infrastructure needs.
Q & A
- What is the frequency range of the BLF8G10LS-160,118?
The BLF8G10LS-160,118 operates within the frequency range of 920 MHz to 960 MHz.
- What is the nominal output power at 3 dB gain compression for this transistor?
The nominal output power at 3 dB gain compression is 160 W.
- What is the typical power gain of the BLF8G10LS-160,118?
The typical power gain is 19.7 dB.
- What is the drain efficiency of this transistor?
The drain efficiency is typically up to 29%.
- Is the BLF8G10LS-160,118 internally matched?
- Does the BLF8G10LS-160,118 have integrated ESD protection?
- What is the package type of the BLF8G10LS-160,118?
The package type is SOT502B.
- Is the BLF8G10LS-160,118 RoHS compliant?
- What are the primary applications of the BLF8G10LS-160,118?
The primary applications include RF power amplifiers for W-CDMA base stations and multicarrier applications within the specified frequency range.
- What is the current status of the BLF8G10LS-160,118?
The BLF8G10LS-160,118 has been discontinued.
