Overview
The BLF8G10LS-160,112 is a high-performance LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed and manufactured by Ampleon (previously part of NXP USA Inc.). This transistor is optimized for use in RF power amplifiers, particularly in base station applications within the frequency range of 920 MHz to 960 MHz. Despite being discontinued, it remains a significant component in the realm of RF power electronics due to its robust features and performance characteristics.
Key Specifications
| Symbol | Parameter | Conditions | Min | Max | Unit | |
|---|---|---|---|---|---|---|
| f range | frequency range | - | 920 | - | 960 | MHz |
| P L(3dB) | nominal output power at 3 dB gain compression | Test signal: 2-c W-CDMA | - | 160 | - | W |
| G p | power gain | P L(AV) = 35 W; V DS = 30 V; I Dq = 1100 mA | 19 | 19.7 | - | dB |
| RL in | input return loss | P L(AV) = 35 W; V DS = 30 V; I Dq = 1100 mA | -15 | -10 | - | dB |
| η D | drain efficiency | P L(AV) = 35 W; V DS = 30 V; 920 MHz ≤ f ≤ 960 MHz; I Dq = 1100 mA | 27 | 29 | - | % |
| P L(AV) | average output power | - | - | 35 | - | W |
| ACPR | adjacent channel power ratio | P L(AV) = 35 W; V DS = 30 V; 920 MHz ≤ f ≤ 960 MHz; I Dq = 1100 mA | -38 | -34 | - | dBc |
| Voltage - Rated | - | - | - | 65 | - | V |
| Voltage - Test | - | - | - | 30 | - | V |
| Current - Test | - | - | - | 1.1 | - | A |
| Package / Case | - | - | - | SOT502B | - | - |
Key Features
- Excellent Ruggedness: Designed to withstand harsh operating conditions.
- High Efficiency: Offers high drain efficiency, typically up to 29%.
- Low Thermal Resistance: Provides excellent thermal stability with low Rth.
- Broadband Operation: Optimized for frequencies between 920 MHz and 960 MHz.
- Lower Output Capacitance: Improves performance in Doherty applications.
- Low Memory Effects: Excellent pre-distortability due to low memory effects.
- Internally Matched: Simplifies the design process with internal matching.
- Integrated ESD Protection: Enhances reliability with built-in ESD protection.
- RoHS Compliant: Compliant with the Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC.
Applications
- RF Power Amplifiers for W-CDMA Base Stations: Ideal for use in base station applications requiring high power and efficiency.
- Multicarrier Applications: Suitable for multicarrier operations within the 920 MHz to 960 MHz frequency range.
Q & A
- What is the frequency range of the BLF8G10LS-160,112 transistor?
The frequency range is from 920 MHz to 960 MHz.
- What is the nominal output power at 3 dB gain compression for this transistor?
The nominal output power at 3 dB gain compression is 160 W.
- What is the typical power gain of the BLF8G10LS-160,112?
The typical power gain is 19.7 dB.
- What is the drain efficiency of this transistor?
The drain efficiency is typically up to 29%.
- What package type is used for the BLF8G10LS-160,112?
The package type is SOT502B.
- Is the BLF8G10LS-160,112 RoHS compliant?
Yes, it is compliant with the RoHS Directive 2002/95/EC.
- What are the typical applications for this transistor?
Typical applications include RF power amplifiers for W-CDMA base stations and multicarrier applications.
- What is the rated voltage for the BLF8G10LS-160,112?
The rated voltage is 65 V.
- What is the test voltage for this transistor?
The test voltage is 30 V.
- What is the current rating during testing for the BLF8G10LS-160,112?
The current rating during testing is 1.1 A.
