Overview
The NE5550234-AZ is a high-performance silicon power MOSFET transistor produced by CEL (California Eastern Laboratories). This component is designed for use in high-power radio frequency (RF) applications, particularly in the VHF to UHF frequency bands. It is known for its high output power, high power added efficiency, and high linear gain, making it suitable for Class-AB power amplifier systems.
Key Specifications
| Parameter | Symbol | Typical Value | Unit |
|---|---|---|---|
| Drain to Source Voltage | VDS | 7.5 | V |
| Gate to Source Voltage | VGS | 2.20 | V |
| Drain Current (50% Duty Pulsed) | IDS-pulse | 1.2 | A |
| Total Power Dissipation | Ptot | 12.5 | W |
| Channel Temperature | Tch | 150 | °C |
| Storage Temperature | Tstg | −65 to +150 | °C |
| Output Power | Pout | 33.0 dBm | dBm |
| Power Added Efficiency | ηadd | 68% | % |
| Linear Gain | GL | 23.5 dB | dB |
Key Features
- High Output Power: The NE5550234-AZ offers a high output power of 33.0 dBm at VDS = 7.5 V, IDset = 40 mA, and f = 460 MHz.
- High Power Added Efficiency: It achieves a high power added efficiency of 68% under the same conditions.
- High Linear Gain: The component provides a high linear gain of 23.5 dB.
- High ESD Tolerance: It has high electrostatic discharge (ESD) tolerance, ensuring robustness against static damage.
- Suitable for VHF to UHF-BAND Class-AB Power Amplifier: It is specifically designed for use in Class-AB power amplifier systems in the VHF to UHF frequency bands.
Applications
- 150 MHz Band Radio System: Suitable for radio systems operating in the 150 MHz band.
- 460 MHz Band Radio System: Ideal for radio systems in the 460 MHz band.
- 900 MHz Band Radio System: Also applicable for radio systems in the 900 MHz band.
Q & A
- What is the typical output power of the NE5550234-AZ?
The typical output power is 33.0 dBm at VDS = 7.5 V, IDset = 40 mA, and f = 460 MHz.
- What is the power added efficiency of the NE5550234-AZ?
The power added efficiency is typically 68% under the specified conditions.
- What is the linear gain of the NE5550234-AZ?
The linear gain is typically 23.5 dB.
- What are the typical operating frequencies for the NE5550234-AZ?
The component is suitable for VHF to UHF frequency bands, specifically 150 MHz, 460 MHz, and 900 MHz.
- What is the maximum drain to source voltage for the NE5550234-AZ?
The maximum drain to source voltage (VDS) is 30 V.
- What is the maximum gate to source voltage for the NE5550234-AZ?
The maximum gate to source voltage (VGS) is 6.0 V.
- What is the total power dissipation of the NE5550234-AZ?
The total power dissipation (Ptot) is 12.5 W.
- What is the storage temperature range for the NE5550234-AZ?
The storage temperature range is from −65°C to +150°C.
- Is the NE5550234-AZ sensitive to electrostatic discharge?
Yes, the component is sensitive to electrostatic discharge and requires precautions during handling.
- What is the package type for the NE5550234-AZ?
The component is packaged in a 3-pin power minimold (34 PKG) package.
