BLF6G27LS-40PGJ
  • Share:

Ampleon USA Inc. BLF6G27LS-40PGJ

Manufacturer No:
BLF6G27LS-40PGJ
Manufacturer:
Ampleon USA Inc.
Package:
Tape & Reel (TR)
Description:
RF FET LDMOS 65V 17DB SOT1121E
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF6G27LS-40PGJ is a 40 W LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed by Ampleon USA Inc. for use in base station applications. This transistor operates within the frequency range of 2500 MHz to 2700 MHz and is also suitable for operation at 2300 MHz to 2400 MHz. Although this product has been discontinued, it remains relevant for understanding high-performance RF power amplifiers.

Key Specifications

Symbol Parameter Conditions Min Max Unit
f range frequency range - 2500 - 2700 MHz
P L(3dB) nominal output power at 3 dB gain compression - - 40 - W
G p power gain P L(AV) = 20 W; V DS = 28 V - 17.5 - dB
η D drain efficiency P L(AV) = 20 W; V DS = 28 V; 2500 MHz ≤ f ≤ 2700 MHz; I Dq = 450 mA - 37 - %
ACPR 5M adjacent channel power ratio (5 MHz) P L(AV) = 20 W; V DS = 28 V; 2500 MHz ≤ f ≤ 2700 MHz; I Dq = 450 mA - -35 - dBc
Voltage - Rated - - - 65 - V
Current - Test - - - 450 - mA
Gain - - - 17.5 - dB

Key Features

  • Excellent Ruggedness: Designed to withstand harsh operating conditions.
  • High Efficiency: Offers high drain efficiency, particularly at 37% when operating at 20 W average power and 2500 MHz to 2700 MHz frequency range.
  • Low Thermal Resistance: Provides excellent thermal stability due to low thermal resistance.
  • Broadband Operation: Designed for broadband operation within the 2500 MHz to 2700 MHz frequency range.
  • Lower Output Capacitance: Optimized for improved performance in Doherty applications.
  • Low Memory Effects: Designed for low memory effects, providing excellent pre-distortability.
  • Internally Matched: Simplifies the design process by being internally matched.
  • Integrated ESD Protection: Includes built-in ESD protection for enhanced reliability.
  • RoHS Compliant: Compliant with Directive 2002/95/EC regarding the Restriction of Hazardous Substances (RoHS).

Applications

The BLF6G27LS-40PGJ is primarily used in RF power amplifiers for W-CDMA base stations and multi-carrier applications within the 2500 MHz to 2700 MHz frequency range.

Q & A

  1. What is the BLF6G27LS-40PGJ used for?

    The BLF6G27LS-40PGJ is used in RF power amplifiers for W-CDMA base stations and multi-carrier applications.

  2. What is the frequency range of the BLF6G27LS-40PGJ?

    The BLF6G27LS-40PGJ operates within the frequency range of 2500 MHz to 2700 MHz and is also suitable for operation at 2300 MHz to 2400 MHz.

  3. What is the nominal output power of the BLF6G27LS-40PGJ at 3 dB gain compression?

    The nominal output power at 3 dB gain compression is 40 W.

  4. What is the drain efficiency of the BLF6G27LS-40PGJ?

    The drain efficiency is 37% when operating at 20 W average power and within the 2500 MHz to 2700 MHz frequency range.

  5. Is the BLF6G27LS-40PGJ RoHS compliant?

    Yes, the BLF6G27LS-40PGJ is compliant with Directive 2002/95/EC regarding the Restriction of Hazardous Substances (RoHS).

  6. What is the rated voltage of the BLF6G27LS-40PGJ?

    The rated voltage is 65 V.

  7. What is the test current for the BLF6G27LS-40PGJ?

    The test current is 450 mA.

  8. Does the BLF6G27LS-40PGJ have integrated ESD protection?

    Yes, it includes built-in ESD protection.

  9. Why is the BLF6G27LS-40PGJ no longer available?

    The BLF6G27LS-40PGJ has been discontinued by Ampleon USA Inc.

  10. What package type does the BLF6G27LS-40PGJ use?

    The BLF6G27LS-40PGJ uses the SOT1121E package.

Product Attributes

Transistor Type:LDMOS (Dual), Common Source
Frequency:2.5GHz ~ 2.7GHz
Gain:17.5dB
Voltage - Test:28 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:450 mA
Power - Output:12W
Voltage - Rated:65 V
Package / Case:SOT-1121E
Supplier Device Package:CDFM4
0 Remaining View Similar

In Stock

-
98

Please send RFQ , we will respond immediately.

Same Series
BLF6G27LS-40P,112
BLF6G27LS-40P,112
RF MOSFET LDMOS DL 28V LDMOST
BLF6G27L-40P,112
BLF6G27L-40P,112
RF FET LDMOS 65V 17DB SOT1121A
BLF6G27L-40P,118
BLF6G27L-40P,118
RF FET LDMOS 65V 17DB SOT1121A
BLF6G27LS-40PGJ
BLF6G27LS-40PGJ
RF FET LDMOS 65V 17DB SOT1121E

Related Product By Categories

BLF8G10LS-300PU
BLF8G10LS-300PU
Ampleon USA Inc.
RF FET LDMOS 65V 20.5DB SOT539B
PD55015TR-E
PD55015TR-E
STMicroelectronics
TRANS RF N-CH FET POWERSO-10RF
PD85035S-E
PD85035S-E
STMicroelectronics
FET RF 40V 870MHZ
A2T09D400-23NR6
A2T09D400-23NR6
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
BLF6G21-10G,135
BLF6G21-10G,135
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT538A
BLF6G21-10G,112
BLF6G21-10G,112
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT538A
BF511,215
BF511,215
NXP USA Inc.
JFET N-CH 20V 30MA SOT23
BLF6G22LS-130,112
BLF6G22LS-130,112
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
PD55003STR-E
PD55003STR-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO-10
BLF6G22-45,135
BLF6G22-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT608A
BLF7G15LS-300P,118
BLF7G15LS-300P,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539B
BF1107,235
BF1107,235
NXP USA Inc.
MOSFET N-CH 3V 10MA SOT23

Related Product By Brand

BLF642,112
BLF642,112
Ampleon USA Inc.
RF MOSFET LDMOS 32V SOT467C
BLF888A,112
BLF888A,112
Ampleon USA Inc.
RF FET LDMOS 110V 21DB SOT539A
BLF881S,112
BLF881S,112
Ampleon USA Inc.
RF MOSFET LDMOS 50V LDMOST
BLF888B,112
BLF888B,112
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT539A
BLF884PS,112
BLF884PS,112
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT1121B
BLF6G10-45,112
BLF6G10-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 22.5DB SOT608A
BLF6G10LS-135RN,11
BLF6G10LS-135RN,11
Ampleon USA Inc.
RF FET LDMOS 65V 21DB SOT502B
BLF861A,112
BLF861A,112
Ampleon USA Inc.
RF FET LDMOS 65V 14.5DB SOT540A
BLF647,112
BLF647,112
Ampleon USA Inc.
RF FET LDMOS 65V 14.5DB SOT540A
BLF6G38S-25,118
BLF6G38S-25,118
Ampleon USA Inc.
RF FET LDMOS 65V 15DB SOT608B
BLF7G21LS-160P,112
BLF7G21LS-160P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1121B
BLF6G27-10GHJ
BLF6G27-10GHJ
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C