BLF6G27LS-40PGJ
  • Share:

Ampleon USA Inc. BLF6G27LS-40PGJ

Manufacturer No:
BLF6G27LS-40PGJ
Manufacturer:
Ampleon USA Inc.
Package:
Tape & Reel (TR)
Description:
RF FET LDMOS 65V 17DB SOT1121E
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF6G27LS-40PGJ is a 40 W LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed by Ampleon USA Inc. for use in base station applications. This transistor operates within the frequency range of 2500 MHz to 2700 MHz and is also suitable for operation at 2300 MHz to 2400 MHz. Although this product has been discontinued, it remains relevant for understanding high-performance RF power amplifiers.

Key Specifications

Symbol Parameter Conditions Min Max Unit
f range frequency range - 2500 - 2700 MHz
P L(3dB) nominal output power at 3 dB gain compression - - 40 - W
G p power gain P L(AV) = 20 W; V DS = 28 V - 17.5 - dB
η D drain efficiency P L(AV) = 20 W; V DS = 28 V; 2500 MHz ≤ f ≤ 2700 MHz; I Dq = 450 mA - 37 - %
ACPR 5M adjacent channel power ratio (5 MHz) P L(AV) = 20 W; V DS = 28 V; 2500 MHz ≤ f ≤ 2700 MHz; I Dq = 450 mA - -35 - dBc
Voltage - Rated - - - 65 - V
Current - Test - - - 450 - mA
Gain - - - 17.5 - dB

Key Features

  • Excellent Ruggedness: Designed to withstand harsh operating conditions.
  • High Efficiency: Offers high drain efficiency, particularly at 37% when operating at 20 W average power and 2500 MHz to 2700 MHz frequency range.
  • Low Thermal Resistance: Provides excellent thermal stability due to low thermal resistance.
  • Broadband Operation: Designed for broadband operation within the 2500 MHz to 2700 MHz frequency range.
  • Lower Output Capacitance: Optimized for improved performance in Doherty applications.
  • Low Memory Effects: Designed for low memory effects, providing excellent pre-distortability.
  • Internally Matched: Simplifies the design process by being internally matched.
  • Integrated ESD Protection: Includes built-in ESD protection for enhanced reliability.
  • RoHS Compliant: Compliant with Directive 2002/95/EC regarding the Restriction of Hazardous Substances (RoHS).

Applications

The BLF6G27LS-40PGJ is primarily used in RF power amplifiers for W-CDMA base stations and multi-carrier applications within the 2500 MHz to 2700 MHz frequency range.

Q & A

  1. What is the BLF6G27LS-40PGJ used for?

    The BLF6G27LS-40PGJ is used in RF power amplifiers for W-CDMA base stations and multi-carrier applications.

  2. What is the frequency range of the BLF6G27LS-40PGJ?

    The BLF6G27LS-40PGJ operates within the frequency range of 2500 MHz to 2700 MHz and is also suitable for operation at 2300 MHz to 2400 MHz.

  3. What is the nominal output power of the BLF6G27LS-40PGJ at 3 dB gain compression?

    The nominal output power at 3 dB gain compression is 40 W.

  4. What is the drain efficiency of the BLF6G27LS-40PGJ?

    The drain efficiency is 37% when operating at 20 W average power and within the 2500 MHz to 2700 MHz frequency range.

  5. Is the BLF6G27LS-40PGJ RoHS compliant?

    Yes, the BLF6G27LS-40PGJ is compliant with Directive 2002/95/EC regarding the Restriction of Hazardous Substances (RoHS).

  6. What is the rated voltage of the BLF6G27LS-40PGJ?

    The rated voltage is 65 V.

  7. What is the test current for the BLF6G27LS-40PGJ?

    The test current is 450 mA.

  8. Does the BLF6G27LS-40PGJ have integrated ESD protection?

    Yes, it includes built-in ESD protection.

  9. Why is the BLF6G27LS-40PGJ no longer available?

    The BLF6G27LS-40PGJ has been discontinued by Ampleon USA Inc.

  10. What package type does the BLF6G27LS-40PGJ use?

    The BLF6G27LS-40PGJ uses the SOT1121E package.

Product Attributes

Transistor Type:LDMOS (Dual), Common Source
Frequency:2.5GHz ~ 2.7GHz
Gain:17.5dB
Voltage - Test:28 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:450 mA
Power - Output:12W
Voltage - Rated:65 V
Package / Case:SOT-1121E
Supplier Device Package:CDFM4
0 Remaining View Similar

In Stock

-
98

Please send RFQ , we will respond immediately.

Same Series
BLF6G27LS-40P,112
BLF6G27LS-40P,112
RF MOSFET LDMOS DL 28V LDMOST
BLF6G27L-40P,112
BLF6G27L-40P,112
RF FET LDMOS 65V 17DB SOT1121A
BLF6G27L-40P,118
BLF6G27L-40P,118
RF FET LDMOS 65V 17DB SOT1121A
BLF6G27LS-40PGJ
BLF6G27LS-40PGJ
RF FET LDMOS 65V 17DB SOT1121E

Related Product By Categories

BLF571,112
BLF571,112
Ampleon USA Inc.
RF MOSFET LDMOS 50V SOT467C
BLF184XRGQ
BLF184XRGQ
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214C
AFT27S010NT1
AFT27S010NT1
NXP USA Inc.
FET RF NCH 65V 2700MHZ PLD1.5W
BLF8G10LS-160,112
BLF8G10LS-160,112
NXP USA Inc.
RF PFET, 1-ELEMENT, ULTRA HIGH F
A2T09D400-23NR6
A2T09D400-23NR6
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
BLF6G27-45,112
BLF6G27-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608A
BF909R,215
BF909R,215
NXP USA Inc.
MOSFET N-CH 7V 40MA SOT143
BLF6G10LS-260PRN,1
BLF6G10LS-260PRN,1
Ampleon USA Inc.
RF FET LDMOS 65V 22DB SOT539B
BF511,215
BF511,215
NXP USA Inc.
JFET N-CH 20V 30MA SOT23
MMBF4416LT1G
MMBF4416LT1G
onsemi
JFET N-CH 30V 15MA SOT23
PD85004
PD85004
STMicroelectronics
FET RF 40V 870MHZ
BLF7G24LS-140
BLF7G24LS-140
Ampleon USA Inc.
RF FET LDMOS 140W SOT502B

Related Product By Brand

BLF647PS,112
BLF647PS,112
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121B
BLF178XR,112
BLF178XR,112
Ampleon USA Inc.
RF MOSFET LDMOS DL 50V SOT539A
BLF6G10LS-200RN:11
BLF6G10LS-200RN:11
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT502B
BLF884PS,112
BLF884PS,112
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT1121B
BLF7G24LS-140,112
BLF7G24LS-140,112
Ampleon USA Inc.
RF MOSFET LDMOS 28V SOT502B
BLF6G10LS-135RN:11
BLF6G10LS-135RN:11
Ampleon USA Inc.
RF FET LDMOS 65V 21DB SOT502B
BLF3G21-6,135
BLF3G21-6,135
Ampleon USA Inc.
RF FET LDMOS 65V 15.5DB SOT538A
BLF888,112
BLF888,112
Ampleon USA Inc.
RF FET LDMOS 104V 19DB SOT979A
BLF6G10LS-135R,118
BLF6G10LS-135R,118
Ampleon USA Inc.
RF FET LDMOS 65V 21DB SOT502B
BLF7G27LS-150P,112
BLF7G27LS-150P,112
Ampleon USA Inc.
RF FET LDMOS 65V 16DB SOT539B
BLF7G24LS-140
BLF7G24LS-140
Ampleon USA Inc.
RF FET LDMOS 140W SOT502B
BLF7G24LS-100
BLF7G24LS-100
Ampleon USA Inc.
RF FET LDMOS 100W SOT502B