BLF8G22LS-160BV,11
  • Share:

Ampleon USA Inc. BLF8G22LS-160BV,11

Manufacturer No:
BLF8G22LS-160BV,11
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET LDMOS 65V 18DB SOT1120B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF8G22LS-160BV,11 is a high-performance RF Power LDMOS transistor manufactured by Ampleon USA Inc. This component is designed for use in RF power amplifier applications, particularly in the frequency range of 2.11 GHz to 2.17 GHz. It is well-suited for base station and multi-carrier applications, including W-CDMA systems. The transistor offers excellent ruggedness, high efficiency, and low thermal resistance, making it a reliable choice for demanding RF environments.

Key Specifications

ParameterValueUnit
Part NumberBLF8G22LS-160BV,11
ManufacturerAmpleon USA Inc.
Transistor TypeLDMOS (Dual), Common Source
Frequency Range2.11 GHz ~ 2.17 GHz
Output Power160 W (typical), 55 W (test condition)W
Gain18 dBdB
Supply Voltage32 V (test), 65 V (rated)V
Current Rating1.3 A (test)A
Package / CaseSOT-1120B
Efficiency32% (typical)%

Key Features

  • High output power of 160 W and high gain of 18 dB, making it suitable for high-power RF applications.
  • Improved video bandwidth and low output capacitance, which are beneficial for Doherty amplifier applications.
  • Internally matched for ease of use and integrated ESD protection for enhanced reliability.
  • Low thermal resistance providing excellent thermal stability and ruggedness in class-AB operation.
  • Compliant with Directive 2002/95/EC regarding Restriction of Hazardous Substances (RoHS).

Applications

  • Base stations for W-CDMA and multi-carrier applications.
  • RF power amplifiers in the 2000 MHz to 2200 MHz frequency range.
  • Household appliances, power chargers, LED lighting, and computer motherboards.
  • Electric vehicles and other high-power electronic systems.

Q & A

  1. What is the frequency range of the BLF8G22LS-160BV,11 transistor? The frequency range is 2.11 GHz to 2.17 GHz.
  2. What is the output power of the BLF8G22LS-160BV,11 transistor? The typical output power is 160 W, and under test conditions, it is 55 W.
  3. What is the gain of the BLF8G22LS-160BV,11 transistor? The gain is 18 dB.
  4. What is the supply voltage for the BLF8G22LS-160BV,11 transistor? The test voltage is 32 V, and the rated voltage is 65 V.
  5. What package type does the BLF8G22LS-160BV,11 transistor use? It uses the SOT-1120B package.
  6. Is the BLF8G22LS-160BV,11 transistor RoHS compliant? Yes, it is RoHS compliant.
  7. What are some key features of the BLF8G22LS-160BV,11 transistor? It includes improved video bandwidth, low output capacitance, internal matching, and integrated ESD protection.
  8. What applications is the BLF8G22LS-160BV,11 transistor suitable for? It is suitable for base stations, RF power amplifiers, household appliances, power chargers, LED lighting, computer motherboards, and electric vehicles.
  9. What is the typical efficiency of the BLF8G22LS-160BV,11 transistor? The typical efficiency is 32%.
  10. Does the BLF8G22LS-160BV,11 transistor have integrated current sense? Yes, it has integrated current sense.

Product Attributes

Transistor Type:LDMOS (Dual), Common Source
Frequency:2.11GHz ~ 2.17GHz
Gain:18dB
Voltage - Test:32 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:1.3 A
Power - Output:55W
Voltage - Rated:65 V
Package / Case:SOT-1120B
Supplier Device Package:LDMOST
0 Remaining View Similar

In Stock

-
206

Please send RFQ , we will respond immediately.

Same Series
DD15S20WES/AA
DD15S20WES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LVLS
DD15S20LVLS
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HV50/AA
CBC13W3S10HV50/AA
CONN D-SUB RCPT 13POS CRIMP
DD26M20H00/AA
DD26M20H00/AA
CONN D-SUB HD PLUG 26P SLDR CUP
CBC9W4S10HTS/AA
CBC9W4S10HTS/AA
CONN D-SUB RCPT 9POS CRIMP
CBC9W4S10HV3S/AA
CBC9W4S10HV3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26M20HE0/AA
DD26M20HE0/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2S500X
DD26S2S500X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S5000
DD26S2S5000
CONN D-SUB HD RCPT 26P SLDR CUP
CBC47W1S1S50V50
CBC47W1S1S50V50
CONN D-SUB RCPT 47POS CRIMP
DD26S20WE20/AA
DD26S20WE20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20J00
DD26S20J00
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BLF8G22LS-160BV,11 BLF8G22LS-160BV:11
Manufacturer Ampleon USA Inc. Ampleon USA Inc.
Product Status Obsolete Obsolete
Transistor Type LDMOS (Dual), Common Source LDMOS (Dual), Common Source
Frequency 2.11GHz ~ 2.17GHz 2.11GHz ~ 2.17GHz
Gain 18dB 18dB
Voltage - Test 32 V 32 V
Current Rating (Amps) - -
Noise Figure - -
Current - Test 1.3 A 1.3 A
Power - Output 55W 55W
Voltage - Rated 65 V 65 V
Package / Case SOT-1120B SOT-1120B
Supplier Device Package LDMOST LDMOST

Related Product By Categories

MRF300AN
MRF300AN
NXP USA Inc.
RF MOSFET LDMOS 50V TO247
2SK3557-7-TB-E
2SK3557-7-TB-E
onsemi
RF MOSFET N-CH JFET 5V 3CP
PD55003TR-E
PD55003TR-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO-10
AFT20S015GNR1
AFT20S015GNR1
NXP USA Inc.
FET RF 65V 2.17GHZ TO270-2G
A2I25D025GNR1
A2I25D025GNR1
NXP USA Inc.
IC TRANS RF LDMOS
MRFE6VS25GNR1
MRFE6VS25GNR1
NXP USA Inc.
RF MOSFET LDMOS 50V TO270-2 GULL
SD2943W
SD2943W
STMicroelectronics
TRANS RF N-CH HF/VHF/UHF M177
MMBF5484
MMBF5484
Fairchild Semiconductor
RF SMALL SIGNAL FIELD-EFFECT TRA
BF862,235
BF862,235
NXP USA Inc.
JFET N-CH 20V 25MA SOT23
BLF6G27-10G,118
BLF6G27-10G,118
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C
BLF6G20LS-110,118
BLF6G20LS-110,118
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT502B
AFT05MS003NT1
AFT05MS003NT1
NXP USA Inc.
IC TRANS RF LDMOS

Related Product By Brand

LYE16350XH
LYE16350XH
Ampleon USA Inc.
LYE16350XH - RF POWER TRANSISTOR
BLF6G27LS-40P,112
BLF6G27LS-40P,112
Ampleon USA Inc.
RF MOSFET LDMOS DL 28V LDMOST
BLF871S,112
BLF871S,112
Ampleon USA Inc.
RF FET LDMOS 89V 19DB SOT467B
BLF888DU
BLF888DU
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT539A
BLF578XRS,112
BLF578XRS,112
Ampleon USA Inc.
RF FET LDMOS 110V 23.5DB SOT539B
BLF6G21-10G,112
BLF6G21-10G,112
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT538A
BLF3G21-6,112
BLF3G21-6,112
Ampleon USA Inc.
RF FET LDMOS 65V 15.5DB SOT538A
BLF888,112
BLF888,112
Ampleon USA Inc.
RF FET LDMOS 104V 19DB SOT979A
BLF6G27-45,135
BLF6G27-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608A
BLF6G38S-25,118
BLF6G38S-25,118
Ampleon USA Inc.
RF FET LDMOS 65V 15DB SOT608B
BLF6G22LS-40P,112
BLF6G22LS-40P,112
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT1121B
BLF7G15LS-300P,118
BLF7G15LS-300P,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539B