BLF8G22LS-160BV,11
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Ampleon USA Inc. BLF8G22LS-160BV,11

Manufacturer No:
BLF8G22LS-160BV,11
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET LDMOS 65V 18DB SOT1120B
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The BLF8G22LS-160BV,11 is a high-performance RF Power LDMOS transistor manufactured by Ampleon USA Inc. This component is designed for use in RF power amplifier applications, particularly in the frequency range of 2.11 GHz to 2.17 GHz. It is well-suited for base station and multi-carrier applications, including W-CDMA systems. The transistor offers excellent ruggedness, high efficiency, and low thermal resistance, making it a reliable choice for demanding RF environments.

Key Specifications

ParameterValueUnit
Part NumberBLF8G22LS-160BV,11
ManufacturerAmpleon USA Inc.
Transistor TypeLDMOS (Dual), Common Source
Frequency Range2.11 GHz ~ 2.17 GHz
Output Power160 W (typical), 55 W (test condition)W
Gain18 dBdB
Supply Voltage32 V (test), 65 V (rated)V
Current Rating1.3 A (test)A
Package / CaseSOT-1120B
Efficiency32% (typical)%

Key Features

  • High output power of 160 W and high gain of 18 dB, making it suitable for high-power RF applications.
  • Improved video bandwidth and low output capacitance, which are beneficial for Doherty amplifier applications.
  • Internally matched for ease of use and integrated ESD protection for enhanced reliability.
  • Low thermal resistance providing excellent thermal stability and ruggedness in class-AB operation.
  • Compliant with Directive 2002/95/EC regarding Restriction of Hazardous Substances (RoHS).

Applications

  • Base stations for W-CDMA and multi-carrier applications.
  • RF power amplifiers in the 2000 MHz to 2200 MHz frequency range.
  • Household appliances, power chargers, LED lighting, and computer motherboards.
  • Electric vehicles and other high-power electronic systems.

Q & A

  1. What is the frequency range of the BLF8G22LS-160BV,11 transistor? The frequency range is 2.11 GHz to 2.17 GHz.
  2. What is the output power of the BLF8G22LS-160BV,11 transistor? The typical output power is 160 W, and under test conditions, it is 55 W.
  3. What is the gain of the BLF8G22LS-160BV,11 transistor? The gain is 18 dB.
  4. What is the supply voltage for the BLF8G22LS-160BV,11 transistor? The test voltage is 32 V, and the rated voltage is 65 V.
  5. What package type does the BLF8G22LS-160BV,11 transistor use? It uses the SOT-1120B package.
  6. Is the BLF8G22LS-160BV,11 transistor RoHS compliant? Yes, it is RoHS compliant.
  7. What are some key features of the BLF8G22LS-160BV,11 transistor? It includes improved video bandwidth, low output capacitance, internal matching, and integrated ESD protection.
  8. What applications is the BLF8G22LS-160BV,11 transistor suitable for? It is suitable for base stations, RF power amplifiers, household appliances, power chargers, LED lighting, computer motherboards, and electric vehicles.
  9. What is the typical efficiency of the BLF8G22LS-160BV,11 transistor? The typical efficiency is 32%.
  10. Does the BLF8G22LS-160BV,11 transistor have integrated current sense? Yes, it has integrated current sense.

Product Attributes

Transistor Type:LDMOS (Dual), Common Source
Frequency:2.11GHz ~ 2.17GHz
Gain:18dB
Voltage - Test:32 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:1.3 A
Power - Output:55W
Voltage - Rated:65 V
Package / Case:SOT-1120B
Supplier Device Package:LDMOST
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Similar Products

Part Number BLF8G22LS-160BV,11 BLF8G22LS-160BV:11
Manufacturer Ampleon USA Inc. Ampleon USA Inc.
Product Status Obsolete Obsolete
Transistor Type LDMOS (Dual), Common Source LDMOS (Dual), Common Source
Frequency 2.11GHz ~ 2.17GHz 2.11GHz ~ 2.17GHz
Gain 18dB 18dB
Voltage - Test 32 V 32 V
Current Rating (Amps) - -
Noise Figure - -
Current - Test 1.3 A 1.3 A
Power - Output 55W 55W
Voltage - Rated 65 V 65 V
Package / Case SOT-1120B SOT-1120B
Supplier Device Package LDMOST LDMOST

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