AFT20S015GNR1
  • Share:

NXP USA Inc. AFT20S015GNR1

Manufacturer No:
AFT20S015GNR1
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
FET RF 65V 2.17GHZ TO270-2G
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The AFT20S015GNR1 is a high-performance RF power transistor manufactured by NXP USA Inc. This device is designed as an N-channel enhancement mode lateral MOSFET, offering high RF output power and superior ruggedness. It is particularly suited for applications requiring robust and reliable RF power amplification.

Key Specifications

ParameterValue
Voltage Rating28 V
Current Rating132 mA
Frequency RangeUp to 2.17 GHz
Power Output1.5 W
Gain17.6 dB
Package TypeTO-270-2 GULL

Key Features

  • High RF output power and gain
  • Superior ruggedness and reliability
  • N-channel enhancement mode lateral MOSFET design
  • Operates up to 2.17 GHz frequency range
  • Compact TO-270-2 GULL package

Applications

The AFT20S015GNR1 is ideal for various RF power amplification applications, including but not limited to:

  • Wireless communication systems
  • Base stations and repeaters
  • Industrial and medical RF equipment
  • Aerospace and defense systems

Q & A

  1. What is the voltage rating of the AFT20S015GNR1? The voltage rating is 28 V.
  2. What is the maximum current rating of the AFT20S015GNR1? The maximum current rating is 132 mA.
  3. What is the frequency range of the AFT20S015GNR1? The frequency range is up to 2.17 GHz.
  4. What is the power output of the AFT20S015GNR1? The power output is 1.5 W.
  5. What is the gain of the AFT20S015GNR1? The gain is 17.6 dB.
  6. What package type does the AFT20S015GNR1 use? The package type is TO-270-2 GULL.
  7. What are the key applications of the AFT20S015GNR1? Key applications include wireless communication systems, base stations, industrial and medical RF equipment, and aerospace and defense systems.
  8. Is the AFT20S015GNR1 RoHS compliant? Yes, the AFT20S015GNR1 is RoHS compliant.
  9. What is the design type of the AFT20S015GNR1? The AFT20S015GNR1 is designed as an N-channel enhancement mode lateral MOSFET.
  10. Where can I find detailed specifications for the AFT20S015GNR1? Detailed specifications can be found in the datasheet available on NXP’s official website and other electronic component distributors like Digi-Key and Mouser.

Product Attributes

Transistor Type:LDMOS
Frequency:2.17GHz
Gain:17.6dB
Voltage - Test:28 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:132 mA
Power - Output:1.5W
Voltage - Rated:65 V
Package / Case:TO-270BA
Supplier Device Package:TO-270-2 GULL
0 Remaining View Similar

In Stock

$26.63
34

Please send RFQ , we will respond immediately.

Same Series
AFT20S015NR1
AFT20S015NR1
RF MOSFET LDMOS 28V TO270-2

Similar Products

Part Number AFT20S015GNR1 AFT20S015NR1
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Active
Transistor Type LDMOS LDMOS
Frequency 2.17GHz 2.17GHz
Gain 17.6dB 17.6dB
Voltage - Test 28 V 28 V
Current Rating (Amps) - -
Noise Figure - -
Current - Test 132 mA 132 mA
Power - Output 1.5W 1.5W
Voltage - Rated 65 V 65 V
Package / Case TO-270BA TO-270AA
Supplier Device Package TO-270-2 GULL TO-270-2

Related Product By Categories

BLF645,112
BLF645,112
Ampleon USA Inc.
RF FET LDMOS 65V 16DB SOT540A
BLF184XRGQ
BLF184XRGQ
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214C
AFT18H357-24NR6
AFT18H357-24NR6
Freescale Semiconductor
AIRFAST RF POWER LDMOS TRANSISTO
MRFE6VP8600HR5
MRFE6VP8600HR5
NXP USA Inc.
FET RF 2CH 130V 860MHZ NI-1230
BLF6G27LS-40P,112
BLF6G27LS-40P,112
Ampleon USA Inc.
RF MOSFET LDMOS DL 28V LDMOST
AFT05MS004NT1
AFT05MS004NT1
NXP USA Inc.
FET RF 30V 520MHZ PLD
SD2942W
SD2942W
STMicroelectronics
IC TRANS RF HF/VHF/UHF M244
BLF7G20LS-200,112
BLF7G20LS-200,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
BLA6H0912-500,112
BLA6H0912-500,112
Ampleon USA Inc.
RF FET LDMOS 100V 17DB SOT634A
BLF7G22LS-130,118
BLF7G22LS-130,118
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF2043F,112
BLF2043F,112
Ampleon USA Inc.
RF FET LDMOS 65V 11DB SOT467C
BLF7G20LS-90PH
BLF7G20LS-90PH
Ampleon USA Inc.
RF FET LDMOS 90W CDFM4

Related Product By Brand

BAV99/LF1R
BAV99/LF1R
NXP USA Inc.
DIODE SWITCHING TO-236AB
BAS16/DG215
BAS16/DG215
NXP USA Inc.
RECTIFIER DIODE, 0.215A, 100V
MKE02Z64VLH4
MKE02Z64VLH4
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 64LQFP
S9S12G192F0VLHR
S9S12G192F0VLHR
NXP USA Inc.
IC MCU 16BIT 192KB FLASH 64LQFP
MCIMX6L2EVN10ABR
MCIMX6L2EVN10ABR
NXP USA Inc.
I.MX 6 SERIES 32-BIT MPU ARM CO
MIMX8ML6CVNKZAB
MIMX8ML6CVNKZAB
NXP USA Inc.
IC I.MX 8M PLUS QUAD BGA
74HCT14D/S400118
74HCT14D/S400118
NXP USA Inc.
IC INVERT SCHMITT 6CH 1-INP 14SO
PCF8566T/S480/1,11
PCF8566T/S480/1,11
NXP USA Inc.
IC DRVR 7 SEGMNT 12 DIGIT 40VSO
PCA24S08AD
PCA24S08AD
NXP USA Inc.
IC EEPROM 8KBIT 400KHZ 8SO
MC56F82723VLC557
MC56F82723VLC557
NXP USA Inc.
MICROCONTROLLER, 32-BIT, FLASH,
PCF7900VHN/C0L,118
PCF7900VHN/C0L,118
NXP USA Inc.
RF TX IC UHF 315/434MHZ 16VFQFN
MMA8652FCR1
MMA8652FCR1
NXP USA Inc.
ACCELEROMETER 2-8G I2C 10DFN