AFT20S015GNR1
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NXP USA Inc. AFT20S015GNR1

Manufacturer No:
AFT20S015GNR1
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
FET RF 65V 2.17GHZ TO270-2G
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The AFT20S015GNR1 is a high-performance RF power transistor manufactured by NXP USA Inc. This device is designed as an N-channel enhancement mode lateral MOSFET, offering high RF output power and superior ruggedness. It is particularly suited for applications requiring robust and reliable RF power amplification.

Key Specifications

ParameterValue
Voltage Rating28 V
Current Rating132 mA
Frequency RangeUp to 2.17 GHz
Power Output1.5 W
Gain17.6 dB
Package TypeTO-270-2 GULL

Key Features

  • High RF output power and gain
  • Superior ruggedness and reliability
  • N-channel enhancement mode lateral MOSFET design
  • Operates up to 2.17 GHz frequency range
  • Compact TO-270-2 GULL package

Applications

The AFT20S015GNR1 is ideal for various RF power amplification applications, including but not limited to:

  • Wireless communication systems
  • Base stations and repeaters
  • Industrial and medical RF equipment
  • Aerospace and defense systems

Q & A

  1. What is the voltage rating of the AFT20S015GNR1? The voltage rating is 28 V.
  2. What is the maximum current rating of the AFT20S015GNR1? The maximum current rating is 132 mA.
  3. What is the frequency range of the AFT20S015GNR1? The frequency range is up to 2.17 GHz.
  4. What is the power output of the AFT20S015GNR1? The power output is 1.5 W.
  5. What is the gain of the AFT20S015GNR1? The gain is 17.6 dB.
  6. What package type does the AFT20S015GNR1 use? The package type is TO-270-2 GULL.
  7. What are the key applications of the AFT20S015GNR1? Key applications include wireless communication systems, base stations, industrial and medical RF equipment, and aerospace and defense systems.
  8. Is the AFT20S015GNR1 RoHS compliant? Yes, the AFT20S015GNR1 is RoHS compliant.
  9. What is the design type of the AFT20S015GNR1? The AFT20S015GNR1 is designed as an N-channel enhancement mode lateral MOSFET.
  10. Where can I find detailed specifications for the AFT20S015GNR1? Detailed specifications can be found in the datasheet available on NXP’s official website and other electronic component distributors like Digi-Key and Mouser.

Product Attributes

Transistor Type:LDMOS
Frequency:2.17GHz
Gain:17.6dB
Voltage - Test:28 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:132 mA
Power - Output:1.5W
Voltage - Rated:65 V
Package / Case:TO-270BA
Supplier Device Package:TO-270-2 GULL
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Same Series
AFT20S015NR1
AFT20S015NR1
RF MOSFET LDMOS 28V TO270-2

Similar Products

Part Number AFT20S015GNR1 AFT20S015NR1
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Active
Transistor Type LDMOS LDMOS
Frequency 2.17GHz 2.17GHz
Gain 17.6dB 17.6dB
Voltage - Test 28 V 28 V
Current Rating (Amps) - -
Noise Figure - -
Current - Test 132 mA 132 mA
Power - Output 1.5W 1.5W
Voltage - Rated 65 V 65 V
Package / Case TO-270BA TO-270AA
Supplier Device Package TO-270-2 GULL TO-270-2

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