Overview
The NTD3055AVT4 is a high-performance N-Channel power MOSFET produced by onsemi. This device is designed for low voltage, high speed switching applications, making it suitable for use in power supplies, converters, power motor controls, and bridge circuits. The MOSFET features a drain-to-source voltage (VDSS) of 60 V and a continuous drain current (ID) of 9.0 A at 25°C. It is available in both DPAK and IPAK packages, ensuring versatility in various design requirements.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | Vdc |
| Drain-to-Gate Voltage | VDGR | 60 | Vdc |
| Gate-to-Source Voltage - Continuous | VGS | −20 to 20 | Vdc |
| Gate-to-Source Voltage - Non-repetitive (tp < 10 ms) | VGS | −30 | Vdc |
| Continuous Drain Current @ TA = 25°C | ID | 9.0 | A |
| Continuous Drain Current @ TA = 100°C | ID | 3.0 | A |
| Single Pulse Drain Current (tp < 10 µs) | IDM | 27 | A |
| Total Power Dissipation @ TA = 25°C | PD | 28.8 | W |
| Operating and Storage Temperature Range | TJ, Tstg | −55 to 175 | °C |
| Static Drain-to-Source On-Resistance (RDS(on)) | RDS(on) | 122 mΩ | mΩ |
Key Features
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-Free and RoHS Compliant: Ensures environmental compliance and reduces the risk of lead contamination.
- High Speed Switching: Designed for high speed switching applications, making it ideal for power supplies, converters, and motor controls.
- Low On-Resistance (RDS(on)): Typical RDS(on) of 122 mΩ at VGS = 10 Vdc and ID = 4.5 A, enhancing efficiency in switching applications.
- High Drain Current Capability: Continuous drain current of 9.0 A at 25°C and single pulse current of 27 A.
Applications
- Power Supplies: Suitable for use in various power supply designs due to its high speed switching and low on-resistance.
- Converters: Ideal for DC-DC converters and other conversion applications requiring high efficiency and reliability.
- Power Motor Controls: Used in motor control circuits for efficient and reliable operation.
- Bridge Circuits: Applicable in bridge configurations for power management and control.
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the NTD3055AVT4 MOSFET?
The maximum drain-to-source voltage (VDSS) is 60 Vdc.
- What is the continuous drain current (ID) at 25°C for this MOSFET?
The continuous drain current (ID) at 25°C is 9.0 A.
- Is the NTD3055AVT4 Pb-Free and RoHS Compliant?
Yes, the NTD3055AVT4 is Pb-Free and RoHS Compliant.
- What are the typical applications of the NTD3055AVT4 MOSFET?
Typical applications include power supplies, converters, power motor controls, and bridge circuits.
- What is the static drain-to-source on-resistance (RDS(on)) of the NTD3055AVT4?
The typical static drain-to-source on-resistance (RDS(on)) is 122 mΩ at VGS = 10 Vdc and ID = 4.5 A.
- What is the operating and storage temperature range for this MOSFET?
The operating and storage temperature range is −55 to 175°C.
- Is the NTD3055AVT4 AEC-Q101 Qualified?
Yes, the NTD3055AVT4 is AEC-Q101 Qualified and PPAP Capable.
- What is the maximum single pulse drain current (IDM) for this MOSFET?
The maximum single pulse drain current (IDM) is 27 A.
- What is the total power dissipation at 25°C for the NTD3055AVT4?
The total power dissipation at 25°C is 28.8 W.
- What are the package options available for the NTD3055AVT4?
The NTD3055AVT4 is available in both DPAK and IPAK packages.
