CLF1G0035-100P
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NXP USA Inc. CLF1G0035-100P

Manufacturer No:
CLF1G0035-100P
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
RF SMALL SIGNAL FIELD-EFFECT TRA
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The NXP USA Inc. CLF1G0035-100P is a high-performance broadband RF power GaN HEMT transistor. Designed for chassis-mount applications, it operates from DC to 3.5 GHz and is engineered to handle harsh environments and demanding frequency bands. This device is particularly suited for wireless communication systems, radar, and other RF-intensive applications where power density and spectral purity are critical.

Key Specifications

ParameterValueUnit
Frequency RangeDC to 3.5 GHz
Power Output100 W
Drain-Source Voltage (VDS)150 VV
Gate-Source Voltage (VGS)-8 to +3 VV
Junction Temperature (Tj)-65 to 250 °C°C
Package TypeSOT1228A (flanged ceramic package)
Power Gain (Gp)Up to 12.8 dBdB
Drain Efficiency (ηD)Up to 52.4%%

Key Features

  • High-frequency operation from DC to 3.5 GHz
  • 100 W general-purpose broadband RF power GaN HEMT
  • Excellent ruggedness with a VSWR of 10:1
  • High voltage operation at 50 V
  • Thermally enhanced package for improved heat dissipation
  • High power gain and efficiency, making it suitable for various RF applications

Applications

  • Commercial wireless infrastructure (cellular, WiMAX)
  • Industrial, scientific, and medical (ISM) applications
  • Radar systems
  • Jammers and EMC testing
  • Broadband general-purpose amplifiers
  • Public mobile radios and defense applications

Q & A

  1. What is the frequency range of the CLF1G0035-100P? The CLF1G0035-100P operates from DC to 3.5 GHz.
  2. What is the maximum power output of the CLF1G0035-100P? The maximum power output is 100 W.
  3. What is the drain-source voltage (VDS) rating of the CLF1G0035-100P? The VDS rating is up to 150 V.
  4. What is the package type of the CLF1G0035-100P? It is housed in a SOT1228A flanged ceramic package.
  5. What are the typical applications of the CLF1G0035-100P? It is used in commercial wireless infrastructure, ISM applications, radar systems, jammers, EMC testing, and defense applications.
  6. What is the junction temperature range of the CLF1G0035-100P? The junction temperature range is from -65 to 250 °C.
  7. Does the CLF1G0035-100P have any special thermal features? Yes, it has a thermally enhanced package for improved heat dissipation.
  8. What is the power gain of the CLF1G0035-100P? The power gain can be up to 12.8 dB.
  9. Is the CLF1G0035-100P RoHS certified? Yes, it is RoHS certified.
  10. What is the typical drain efficiency of the CLF1G0035-100P? The typical drain efficiency is up to 52.4%.

Product Attributes

Transistor Type:HEMT
Frequency:3.5GHz
Gain:12.5dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:330 mA
Power - Output:100W
Voltage - Rated:150 V
Package / Case:SOT-1228A
Supplier Device Package:LDMOST
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Similar Products

Part Number CLF1G0035-100P CLF1G0035S-100P CLF1G0035-100PU CLF1G0035-100H
Manufacturer NXP USA Inc. Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc.
Product Status Active Active Not For New Designs Active
Transistor Type HEMT - GaN HEMT GaN HEMT
Frequency 3.5GHz - 3GHz 3GHz
Gain 12.5dB - 14dB 12dB
Voltage - Test 50 V - 50 V 50 V
Current Rating (Amps) - - - -
Noise Figure - - - -
Current - Test 330 mA - 100 mA 330 mA
Power - Output 100W - 100W 100W
Voltage - Rated 150 V - 150 V 150 V
Package / Case SOT-1228A - SOT-1228A SOT467C
Supplier Device Package LDMOST - LDMOST SOT467C

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