Overview
The PD20010-E is a high-performance RF power transistor manufactured by STMicroelectronics. It is a common source N-Channel, enhancement-mode lateral field-effect transistor (LDMOS FET) designed for high gain and broadband applications. This component is particularly suited for wide-band communication and Industrial, Scientific, and Medical (ISM) applications.
Key Specifications
| Parameter | Value |
|---|---|
| Voltage Rating | 28/32V |
| Power Output | 150W |
| Current Rating | 150 mA |
| Frequency Range | Up to 2GHz |
| Gain | 11dB |
| Package Type | PowerSO-10RF (Formed Lead) |
Key Features
- High gain and broadband performance
- Enhancement-mode LDMOS FET technology
- Common source N-Channel configuration
- High power output of 150W
- Operates up to 2GHz frequency range
- PowerSO-10RF package for efficient heat dissipation and compact design
Applications
The PD20010-E is designed for various high-frequency applications, including:
- Wide-band communication systems
- Industrial, Scientific, and Medical (ISM) equipment
- Radar systems
- Broadcasting and telecommunications equipment
Q & A
- What is the PD20010-E? The PD20010-E is a high-performance RF power transistor manufactured by STMicroelectronics.
- What is the voltage rating of the PD20010-E? The voltage rating is 28/32V.
- What is the maximum power output of the PD20010-E? The maximum power output is 150W.
- What is the frequency range of the PD20010-E? It operates up to 2GHz.
- What is the gain of the PD20010-E? The gain is 11dB.
- What package type does the PD20010-E use? It uses the PowerSO-10RF (Formed Lead) package.
- Is the PD20010-E still in production? No, the PD20010-E is no longer manufactured.
- What are the typical applications of the PD20010-E? It is used in wide-band communication, ISM applications, radar systems, and broadcasting and telecommunications equipment.
- What technology does the PD20010-E use? It uses enhancement-mode LDMOS FET technology.
- What is the current rating of the PD20010-E? The current rating is 150 mA.
