Overview
The BLF184XRGJ is a high-performance RF LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor manufactured by Ampleon USA Inc. This device is designed for high-power RF applications, particularly in the frequency range suitable for various communication and broadcasting systems.
With its robust design and advanced LDMOS technology, the BLF184XRGJ offers high efficiency, reliability, and durability, making it an ideal choice for demanding RF environments.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Vds (Drain-Source Voltage) | 135 | V |
Pout (Output Power) | 700 | W |
Gain | 23.9 dB | - |
f (Frequency) | 108 MHz | - |
Id (Drain Current) | 100 mA | - |
Package Type | SOT1214C | - |
Key Features
- High Output Power: The BLF184XRGJ is capable of delivering up to 700 W of output power, making it suitable for high-power RF applications.
- High Gain: With a gain of 23.9 dB, this transistor ensures efficient signal amplification.
- Robust Design: The device is built with LDMOS technology, which provides high reliability and durability in demanding RF environments.
- Low Distortion: It is designed to minimize distortion, ensuring high-quality signal transmission.
- Compact Package: The SOT1214C package is compact and suitable for various board designs.
Applications
- Base Stations: Ideal for use in cellular base stations and other wireless communication infrastructure.
- Broadcasting Systems: Suitable for broadcasting applications such as FM and TV transmitters.
- Industrial RF Systems: Used in various industrial RF applications requiring high power and efficiency.
- Radar Systems: Can be used in radar systems due to its high power and frequency stability.
Q & A
- What is the maximum output power of the BLF184XRGJ?
The maximum output power of the BLF184XRGJ is 700 W.
- What is the typical gain of the BLF184XRGJ?
The typical gain of the BLF184XRGJ is 23.9 dB.
- What is the drain-source voltage (Vds) of the BLF184XRGJ?
The drain-source voltage (Vds) of the BLF184XRGJ is 135 V.
- What is the package type of the BLF184XRGJ?
The package type of the BLF184XRGJ is SOT1214C.
- What are the typical applications of the BLF184XRGJ?
The BLF184XRGJ is typically used in base stations, broadcasting systems, industrial RF systems, and radar systems.
- What is the frequency range for which the BLF184XRGJ is designed?
The BLF184XRGJ is designed for frequencies around 108 MHz.
- What technology is used in the BLF184XRGJ?
The BLF184XRGJ uses LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology.
- How much drain current does the BLF184XRGJ handle?
The BLF184XRGJ handles up to 100 mA of drain current.
- Is the BLF184XRGJ suitable for high-power RF applications?
Yes, the BLF184XRGJ is specifically designed for high-power RF applications.
- Where can I find detailed specifications and datasheets for the BLF184XRGJ?
Detailed specifications and datasheets for the BLF184XRGJ can be found on the official Ampleon USA Inc. website, as well as on distributor websites like Digi-Key and Mouser.