BLF184XRGJ
  • Share:

Ampleon USA Inc. BLF184XRGJ

Manufacturer No:
BLF184XRGJ
Manufacturer:
Ampleon USA Inc.
Package:
Tape & Reel (TR)
Description:
RF FET LDMOS 135V 23DB SOT1214C
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF184XRGJ is a high-performance RF LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor manufactured by Ampleon USA Inc. This device is designed for high-power RF applications, particularly in the frequency range suitable for various communication and broadcasting systems.

With its robust design and advanced LDMOS technology, the BLF184XRGJ offers high efficiency, reliability, and durability, making it an ideal choice for demanding RF environments.

Key Specifications

Parameter Value Unit
Vds (Drain-Source Voltage) 135 V
Pout (Output Power) 700 W
Gain 23.9 dB -
f (Frequency) 108 MHz -
Id (Drain Current) 100 mA -
Package Type SOT1214C -

Key Features

  • High Output Power: The BLF184XRGJ is capable of delivering up to 700 W of output power, making it suitable for high-power RF applications.
  • High Gain: With a gain of 23.9 dB, this transistor ensures efficient signal amplification.
  • Robust Design: The device is built with LDMOS technology, which provides high reliability and durability in demanding RF environments.
  • Low Distortion: It is designed to minimize distortion, ensuring high-quality signal transmission.
  • Compact Package: The SOT1214C package is compact and suitable for various board designs.

Applications

  • Base Stations: Ideal for use in cellular base stations and other wireless communication infrastructure.
  • Broadcasting Systems: Suitable for broadcasting applications such as FM and TV transmitters.
  • Industrial RF Systems: Used in various industrial RF applications requiring high power and efficiency.
  • Radar Systems: Can be used in radar systems due to its high power and frequency stability.

Q & A

  1. What is the maximum output power of the BLF184XRGJ?

    The maximum output power of the BLF184XRGJ is 700 W.

  2. What is the typical gain of the BLF184XRGJ?

    The typical gain of the BLF184XRGJ is 23.9 dB.

  3. What is the drain-source voltage (Vds) of the BLF184XRGJ?

    The drain-source voltage (Vds) of the BLF184XRGJ is 135 V.

  4. What is the package type of the BLF184XRGJ?

    The package type of the BLF184XRGJ is SOT1214C.

  5. What are the typical applications of the BLF184XRGJ?

    The BLF184XRGJ is typically used in base stations, broadcasting systems, industrial RF systems, and radar systems.

  6. What is the frequency range for which the BLF184XRGJ is designed?

    The BLF184XRGJ is designed for frequencies around 108 MHz.

  7. What technology is used in the BLF184XRGJ?

    The BLF184XRGJ uses LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology.

  8. How much drain current does the BLF184XRGJ handle?

    The BLF184XRGJ handles up to 100 mA of drain current.

  9. Is the BLF184XRGJ suitable for high-power RF applications?

    Yes, the BLF184XRGJ is specifically designed for high-power RF applications.

  10. Where can I find detailed specifications and datasheets for the BLF184XRGJ?

    Detailed specifications and datasheets for the BLF184XRGJ can be found on the official Ampleon USA Inc. website, as well as on distributor websites like Digi-Key and Mouser.

Product Attributes

Transistor Type:LDMOS (Dual), Common Source
Frequency:108MHz
Gain:23.9dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:100 mA
Power - Output:700W
Voltage - Rated:135 V
Package / Case:SOT-1214C
Supplier Device Package:SOT1214C
0 Remaining View Similar

In Stock

$162.05
3

Please send RFQ , we will respond immediately.

Same Series
BLF184XRGJ
BLF184XRGJ
RF FET LDMOS 135V 23DB SOT1214C

Similar Products

Part Number BLF184XRGJ BLF188XRGJ BLF184XRGQ
Manufacturer Ampleon USA Inc. Ampleon USA Inc. Ampleon USA Inc.
Product Status Active Active Active
Transistor Type LDMOS (Dual), Common Source LDMOS (Dual), Common Source LDMOS (Dual), Common Source
Frequency 108MHz 108MHz 108MHz
Gain 23.9dB 24.4dB 23.9dB
Voltage - Test 50 V 50 V 50 V
Current Rating (Amps) - - -
Noise Figure - - -
Current - Test 100 mA 40 mA 100 mA
Power - Output 700W 1400W 700W
Voltage - Rated 135 V 135 V 135 V
Package / Case SOT-1214C SOT-1248C SOT-1214C
Supplier Device Package SOT1214C CDFM4 SOT1214C

Related Product By Categories

BLF645,112
BLF645,112
Ampleon USA Inc.
RF FET LDMOS 65V 16DB SOT540A
PD55003TR-E
PD55003TR-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO-10
MMRF1015NR1
MMRF1015NR1
NXP USA Inc.
FET RF 68V 960MHZ TO270
MRF101AN-START
MRF101AN-START
NXP USA Inc.
MRF101AN RF ESSENTIALS COMPONENT
PD55015-E
PD55015-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO-10
PD54008-E
PD54008-E
STMicroelectronics
FET RF 25V 500MHZ PWRSO10
BLF7G24LS-100,118
BLF7G24LS-100,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
BLF7G24LS-140,112
BLF7G24LS-140,112
Ampleon USA Inc.
RF MOSFET LDMOS 28V SOT502B
BLF7G27LS-150P,118
BLF7G27LS-150P,118
Ampleon USA Inc.
RF FET LDMOS 65V 16DB SOT539B
BLF6G20S-45,118
BLF6G20S-45,118
Ampleon USA Inc.
RF FET LDMOS 65V 19.2DB SOT608B
LET9045C
LET9045C
STMicroelectronics
MOSFET N-CH 80V 9A M-250
BLP7G22-10,135
BLP7G22-10,135
NXP USA Inc.
TRANSISTOR DRIVER LDMOS 12HVSON

Related Product By Brand

BLF3G21-30
BLF3G21-30
Ampleon USA Inc.
RF PFET, 1-ELEMENT, ULTRA HIGH F
BLF645,112
BLF645,112
Ampleon USA Inc.
RF FET LDMOS 65V 16DB SOT540A
BLF888A,112
BLF888A,112
Ampleon USA Inc.
RF FET LDMOS 110V 21DB SOT539A
CLF1G0060-10
CLF1G0060-10
Ampleon USA Inc.
CLF1G0060-10 - 10W BROADBAND RF
BLF7G27LS-100,118
BLF7G27LS-100,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
CLF1G0035-100H
CLF1G0035-100H
Ampleon USA Inc.
CLF1G0035-100 - 100W BROADBAND R
BLF6G10LS-135RN,11
BLF6G10LS-135RN,11
Ampleon USA Inc.
RF FET LDMOS 65V 21DB SOT502B
BLF404,115
BLF404,115
Ampleon USA Inc.
RF FET NCHA 40V 11.5DB SOT409A
BLF2043F,135
BLF2043F,135
Ampleon USA Inc.
RF FET LDMOS 65V 11DB SOT467C
BLF6G20S-45,118
BLF6G20S-45,118
Ampleon USA Inc.
RF FET LDMOS 65V 19.2DB SOT608B
BLF7G20LS-250P,112
BLF7G20LS-250P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539B
BLF6G27-10GHJ
BLF6G27-10GHJ
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C