Overview
The BLF7G24LS-140,112 is a high-performance LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor designed by Ampleon USA Inc. for use in RF power amplifiers, particularly in base station applications. Although this product has been discontinued, it remains notable for its robust specifications and features tailored for the 2300 MHz to 2400 MHz frequency range.
Key Specifications
| Symbol | Parameter | Conditions | Min | Max | Unit | |
|---|---|---|---|---|---|---|
| f range | Frequency range | - | 2300 | - | 2400 | MHz |
| P L(3dB) | Nominal output power at 3 dB gain compression | - | - | 140 | - | W |
| G p | Power gain | V DS = 28 V | 17.5 | 18.5 | - | dB |
| RL in | Input return loss | V DS = 28 V; I Dq = 1300 mA | -12 | - | - | dB |
| η D | Drain efficiency | V DS = 28 V; 2300 MHz ≤ f ≤ 2400 MHz; I Dq = 1300 mA | 23 | 26.5 | - | % |
| P L(AV) | Average output power | - | - | 30 | - | W |
| ACPR 885k | Adjacent channel power ratio (885 kHz) | P L(AV) = 30 W; V DS = 28 V; 2300 MHz ≤ f ≤ 2400 MHz; I Dq = 1300 mA | -45 | -40 | - | dBc |
Key Features
- High Efficiency: The transistor offers high efficiency, which is crucial for minimizing power consumption and heat generation in base station applications.
- Integrated ESD Protection: Built-in ESD protection enhances the reliability and durability of the device.
- Low Memory Effects: It provides excellent digital pre-distortion capability due to its low memory effects.
- Internally Matched: The transistor is internally matched, making it easier to integrate into systems.
- Excellent Ruggedness: It features excellent ruggedness, ensuring robust performance under various operating conditions.
- Low Rth: The low thermal resistance (Rth) ensures excellent thermal stability.
- RoHS Compliance: The device is compliant with Directive 2002/95/EC, regarding the Restriction of Hazardous Substances.
Applications
- RF Power Amplifiers for Base Stations: The BLF7G24LS-140,112 is specifically designed for use in RF power amplifiers in base station applications.
- Multicarrier Applications: It is suitable for multicarrier applications within the 2300 MHz to 2400 MHz frequency range.
Q & A
- What is the frequency range of the BLF7G24LS-140,112?
The frequency range is from 2300 MHz to 2400 MHz.
- What is the nominal output power at 3 dB gain compression?
The nominal output power at 3 dB gain compression is 140 W.
- What is the power gain of the transistor?
The power gain is typically 18.5 dB at V DS = 28 V.
- Does the transistor have integrated ESD protection?
Yes, it has integrated ESD protection.
- What is the average output power of the transistor?
The average output power is 30 W.
- Is the transistor RoHS compliant?
Yes, it is compliant with Directive 2002/95/EC regarding the Restriction of Hazardous Substances.
- What is the typical drain efficiency of the transistor?
The typical drain efficiency is 26.5% at V DS = 28 V and within the specified frequency range.
- What is the input return loss of the transistor?
The input return loss is typically -12 dB at V DS = 28 V and I Dq = 1300 mA.
- What are the primary applications of the BLF7G24LS-140,112?
The primary applications include RF power amplifiers for base stations and multicarrier applications within the specified frequency range.
- What is the package type of the BLF7G24LS-140,112?
The transistor is packaged in SOT502B.
