CLF1G0060-10U
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Ampleon USA Inc. CLF1G0060-10U

Manufacturer No:
CLF1G0060-10U
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET HEMT 150V 14.5DB SOT1227A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CLF1G0060-10U is a high-power, high-frequency N-Channel Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) produced by Ampleon USA Inc. This device is designed for general-purpose broadband RF power applications and is capable of operating from DC to 6.0 GHz. It has been transferred from Ampleon to Rochester Electronics for distribution and support.

Key Specifications

Symbol Parameter Conditions Min Max Unit
f range Frequency range 0 6000 MHz
P L(1dB) Nominal output power at 1 dB gain compression 10 W 10 W
V DS Drain-source voltage P L = 10 W 50 V
η D Drain efficiency P L = 10 W 44 48 52 %
G p Power gain P L = 10 W 13.5 15 16 dB
RL in Input return loss P L = 10 W -10 dB
P droop(pulse) Pulse droop power P L = 10 W 0.04 dB
t r Rise time P L = 10 W 5 ns
t f Fall time P L = 10 W 5 ns

Key Features

  • Frequency of operation from DC to 6.0 GHz
  • 10 W general purpose broadband RF power GaN HEMT
  • Excellent ruggedness with VSWR = 10 : 1
  • High voltage operation up to 50 V
  • Thermally enhanced package

Applications

  • Commercial wireless infrastructure (Cellular, WiMAX)
  • Radar
  • Broadband general purpose amplifier
  • Public mobile radios
  • Industrial, scientific, medical (ISM) applications
  • Jammers
  • EMC testing
  • Defense applications

Q & A

  1. What is the frequency range of the CLF1G0060-10U?

    The CLF1G0060-10U operates from DC to 6.0 GHz.

  2. What is the nominal output power of the CLF1G0060-10U at 1 dB gain compression?

    The nominal output power is 10 W.

  3. What is the drain-source voltage of the CLF1G0060-10U?

    The drain-source voltage is up to 50 V.

  4. What is the typical drain efficiency of the CLF1G0060-10U?

    The typical drain efficiency is between 44% and 52%.

  5. What are the key applications of the CLF1G0060-10U?

    The key applications include commercial wireless infrastructure, radar, broadband general purpose amplifiers, public mobile radios, ISM applications, jammers, EMC testing, and defense applications.

  6. What is the package type of the CLF1G0060-10U?

    The package type is CDFM2 (SOT1227A).

  7. Is the CLF1G0060-10U suitable for high-voltage operations?
  8. What is the input return loss of the CLF1G0060-10U?

    The input return loss is typically -10 dB.

  9. How long is the rise and fall time of the CLF1G0060-10U?

    The rise and fall time are both typically 5 ns.

  10. Where can I purchase the CLF1G0060-10U?

    The CLF1G0060-10U can be purchased from distributors like Rochester Electronics.

Product Attributes

Transistor Type:GaN HEMT
Frequency:3GHz ~ 3.5GHz
Gain:14.5dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:50 mA
Power - Output:10W
Voltage - Rated:150 V
Package / Case:SOT-1227A
Supplier Device Package:CDFM2
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In Stock

$98.87
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Same Series
CLF1G0060S-10U
CLF1G0060S-10U
RF SMALL SIGNAL FIELD-EFFECT TRA

Similar Products

Part Number CLF1G0060-10U CLF1G0060-30U CLF1G0060S-10U
Manufacturer Ampleon USA Inc. Ampleon USA Inc. NXP USA Inc.
Product Status Not For New Designs Not For New Designs Active
Transistor Type GaN HEMT GaN HEMT GaN HEMT
Frequency 3GHz ~ 3.5GHz 3GHz ~ 3.5GHz 3GHz ~ 3.5GHz
Gain 14.5dB 13dB 14.5dB
Voltage - Test 50 V 50 V 50 V
Current Rating (Amps) - - -
Noise Figure - - -
Current - Test 50 mA 70 mA 50 mA
Power - Output 10W 30W 10W
Voltage - Rated 150 V 150 V 150 V
Package / Case SOT-1227A SOT-1227A SOT-1227B
Supplier Device Package CDFM2 CDFM2 SOT-1227B

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