CLF1G0035-50H
  • Share:

Ampleon USA Inc. CLF1G0035-50H

Manufacturer No:
CLF1G0035-50H
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
CLF1G0035-50 - 50W BROADBAND RF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CLF1G0035-50H is a broadband general-purpose amplifier produced by Ampleon USA Inc., utilizing first-generation Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) technology. This amplifier is designed to deliver high power and efficiency, making it suitable for a variety of RF applications. The CLF1G0035-50H is available in the SOT-467C package, which is compact and suitable for space-constrained designs.

Key Specifications

ParameterValueUnit
Output Power50W
Drain-Source Breakdown Voltage (V(BR)DSS)150V
Gate-Source Threshold Voltage (VGS(th))2.4 - 1.3V
Package TypeSOT-467C
Operating Temperature Range-40 to 150°C

Key Features

  • High power output of 50 W, making it suitable for demanding RF applications.
  • Utilizes first-generation GaN HEMT technology for high efficiency and reliability.
  • Compact SOT-467C package, ideal for space-constrained designs.
  • High drain-source breakdown voltage (V(BR)DSS) of 150 V.
  • Gate-source threshold voltage (VGS(th)) range of 2.4 to 1.3 V.

Applications

The CLF1G0035-50H is versatile and can be used in various RF power amplifier circuits, including but not limited to:

  • Broadband communication systems.
  • Industrial and medical RF applications.
  • Aerospace and defense systems.
  • High-frequency RF power amplifiers.

Q & A

  1. What is the output power of the CLF1G0035-50H? The output power of the CLF1G0035-50H is 50 W.
  2. What technology does the CLF1G0035-50H use? The CLF1G0035-50H uses first-generation GaN HEMT technology.
  3. What is the package type of the CLF1G0035-50H? The CLF1G0035-50H is available in the SOT-467C package.
  4. What is the drain-source breakdown voltage (V(BR)DSS) of the CLF1G0035-50H? The drain-source breakdown voltage (V(BR)DSS) is 150 V.
  5. What is the gate-source threshold voltage (VGS(th)) range of the CLF1G0035-50H? The gate-source threshold voltage (VGS(th)) range is 2.4 to 1.3 V.
  6. What are some common applications of the CLF1G0035-50H? Common applications include broadband communication systems, industrial and medical RF applications, aerospace and defense systems, and high-frequency RF power amplifiers.
  7. Is the CLF1G0035-50H RoHS compliant? Yes, the CLF1G0035-50H is RoHS compliant.
  8. What is the operating temperature range of the CLF1G0035-50H? The operating temperature range is -40 to 150°C.
  9. Where can I find detailed specifications for the CLF1G0035-50H? Detailed specifications can be found on the official Ampleon website, as well as on distributor websites such as Digi-Key and LCSC.
  10. Is the CLF1G0035-50H suitable for space-constrained designs? Yes, the CLF1G0035-50H is suitable for space-constrained designs due to its compact SOT-467C package.

Product Attributes

Transistor Type:GaN HEMT
Frequency:3GHz
Gain:11.5dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:150 mA
Power - Output:50W
Voltage - Rated:150 V
Package / Case:SOT467C
Supplier Device Package:SOT467C
0 Remaining View Similar

In Stock

-
83

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV5X/AA
DD15S2S5WV5X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HV30/AA
RD15S10HV30/AA
CONN D-SUB RCPT 15POS CRIMP
DD26S2000X/AA
DD26S2000X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JV3S/AA
DD15S20JV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HT2S/AA
CBC9W4S10HT2S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S200TX
DD26S200TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V30
DD26S2S0V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V3X
DD26S2S50V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V30
DD26S2S50V30
CONN D-SUB HD RCPT 26P SLDR CUP
RD50S100V50
RD50S100V50
CONN D-SUB RCPT 50POS CRIMP
DD26S20W00
DD26S20W00
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60T0
DD44S32S60T0
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number CLF1G0035-50H CLF1G0035-50
Manufacturer Ampleon USA Inc. Ampleon USA Inc.
Product Status Active Active
Transistor Type GaN HEMT GaN HEMT
Frequency 3GHz 3GHz
Gain 11.5dB 11.5dB
Voltage - Test 50 V 50 V
Current Rating (Amps) - -
Noise Figure - -
Current - Test 150 mA 150 mA
Power - Output 50W 50W
Voltage - Rated 150 V 150 V
Package / Case SOT467C SOT467C
Supplier Device Package SOT467C SOT467C

Related Product By Categories

BLF571,112
BLF571,112
Ampleon USA Inc.
RF MOSFET LDMOS 50V SOT467C
BLF888B,112
BLF888B,112
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT539A
BLF7G27LS-140,112
BLF7G27LS-140,112
NXP USA Inc.
RF PFET, 1-ELEMENT, S BAND, SILI
BLF8G10LS-300PU
BLF8G10LS-300PU
Ampleon USA Inc.
RF FET LDMOS 65V 20.5DB SOT539B
AFT09MS015NT1
AFT09MS015NT1
NXP USA Inc.
RF MOSFET LDMOS 12.5V PLD1.5W
PD84002
PD84002
STMicroelectronics
FET RF 25V 870MHZ
BLF6G10LS-260PRN:1
BLF6G10LS-260PRN:1
Ampleon USA Inc.
RF FET LDMOS 65V 22DB SOT539B
BF904R,235
BF904R,235
NXP USA Inc.
MOSFET N-CH 7V 30MA SOT143
BF862,215
BF862,215
NXP USA Inc.
JFET N-CH 20V 25MA SOT23
PD55035S-E
PD55035S-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO10
BLF6G27LS-75,118
BLF6G27LS-75,118
Ampleon USA Inc.
RF FET LDMOS 65V SOT502B
A2T18H455W23NR6
A2T18H455W23NR6
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO

Related Product By Brand

BLF183XRSU
BLF183XRSU
Ampleon USA Inc.
RF FET LDMOS 135V 28DB SOT1121B
BLF184XRGQ
BLF184XRGQ
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214C
BLF184XRSU
BLF184XRSU
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214B
BLF8G22LS-140U
BLF8G22LS-140U
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF8G22LS-220U
BLF8G22LS-220U
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
BLF647PSJ
BLF647PSJ
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT1121B
BLF7G22LS-130,118
BLF7G22LS-130,118
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF6G10LS-135RN:11
BLF6G10LS-135RN:11
Ampleon USA Inc.
RF FET LDMOS 65V 21DB SOT502B
BLF248,112
BLF248,112
Ampleon USA Inc.
RF FET 2 NC 65V 11.5DB SOT262A1
BLF6G27S-45,118
BLF6G27S-45,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608B
BLF6G22-45,112
BLF6G22-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT608A
BLF6G20S-45,112
BLF6G20S-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 19.2DB SOT608B