CLF1G0035-50H
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Ampleon USA Inc. CLF1G0035-50H

Manufacturer No:
CLF1G0035-50H
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
CLF1G0035-50 - 50W BROADBAND RF
Delivery:
Payment:
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Product Introduction

Overview

The CLF1G0035-50H is a broadband general-purpose amplifier produced by Ampleon USA Inc., utilizing first-generation Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) technology. This amplifier is designed to deliver high power and efficiency, making it suitable for a variety of RF applications. The CLF1G0035-50H is available in the SOT-467C package, which is compact and suitable for space-constrained designs.

Key Specifications

ParameterValueUnit
Output Power50W
Drain-Source Breakdown Voltage (V(BR)DSS)150V
Gate-Source Threshold Voltage (VGS(th))2.4 - 1.3V
Package TypeSOT-467C
Operating Temperature Range-40 to 150°C

Key Features

  • High power output of 50 W, making it suitable for demanding RF applications.
  • Utilizes first-generation GaN HEMT technology for high efficiency and reliability.
  • Compact SOT-467C package, ideal for space-constrained designs.
  • High drain-source breakdown voltage (V(BR)DSS) of 150 V.
  • Gate-source threshold voltage (VGS(th)) range of 2.4 to 1.3 V.

Applications

The CLF1G0035-50H is versatile and can be used in various RF power amplifier circuits, including but not limited to:

  • Broadband communication systems.
  • Industrial and medical RF applications.
  • Aerospace and defense systems.
  • High-frequency RF power amplifiers.

Q & A

  1. What is the output power of the CLF1G0035-50H? The output power of the CLF1G0035-50H is 50 W.
  2. What technology does the CLF1G0035-50H use? The CLF1G0035-50H uses first-generation GaN HEMT technology.
  3. What is the package type of the CLF1G0035-50H? The CLF1G0035-50H is available in the SOT-467C package.
  4. What is the drain-source breakdown voltage (V(BR)DSS) of the CLF1G0035-50H? The drain-source breakdown voltage (V(BR)DSS) is 150 V.
  5. What is the gate-source threshold voltage (VGS(th)) range of the CLF1G0035-50H? The gate-source threshold voltage (VGS(th)) range is 2.4 to 1.3 V.
  6. What are some common applications of the CLF1G0035-50H? Common applications include broadband communication systems, industrial and medical RF applications, aerospace and defense systems, and high-frequency RF power amplifiers.
  7. Is the CLF1G0035-50H RoHS compliant? Yes, the CLF1G0035-50H is RoHS compliant.
  8. What is the operating temperature range of the CLF1G0035-50H? The operating temperature range is -40 to 150°C.
  9. Where can I find detailed specifications for the CLF1G0035-50H? Detailed specifications can be found on the official Ampleon website, as well as on distributor websites such as Digi-Key and LCSC.
  10. Is the CLF1G0035-50H suitable for space-constrained designs? Yes, the CLF1G0035-50H is suitable for space-constrained designs due to its compact SOT-467C package.

Product Attributes

Transistor Type:GaN HEMT
Frequency:3GHz
Gain:11.5dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:150 mA
Power - Output:50W
Voltage - Rated:150 V
Package / Case:SOT467C
Supplier Device Package:SOT467C
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Similar Products

Part Number CLF1G0035-50H CLF1G0035-50
Manufacturer Ampleon USA Inc. Ampleon USA Inc.
Product Status Active Active
Transistor Type GaN HEMT GaN HEMT
Frequency 3GHz 3GHz
Gain 11.5dB 11.5dB
Voltage - Test 50 V 50 V
Current Rating (Amps) - -
Noise Figure - -
Current - Test 150 mA 150 mA
Power - Output 50W 50W
Voltage - Rated 150 V 150 V
Package / Case SOT467C SOT467C
Supplier Device Package SOT467C SOT467C

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