CLF1G0035-50H
  • Share:

Ampleon USA Inc. CLF1G0035-50H

Manufacturer No:
CLF1G0035-50H
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
CLF1G0035-50 - 50W BROADBAND RF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The CLF1G0035-50H is a broadband general-purpose amplifier produced by Ampleon USA Inc., utilizing first-generation Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) technology. This amplifier is designed to deliver high power and efficiency, making it suitable for a variety of RF applications. The CLF1G0035-50H is available in the SOT-467C package, which is compact and suitable for space-constrained designs.

Key Specifications

ParameterValueUnit
Output Power50W
Drain-Source Breakdown Voltage (V(BR)DSS)150V
Gate-Source Threshold Voltage (VGS(th))2.4 - 1.3V
Package TypeSOT-467C
Operating Temperature Range-40 to 150°C

Key Features

  • High power output of 50 W, making it suitable for demanding RF applications.
  • Utilizes first-generation GaN HEMT technology for high efficiency and reliability.
  • Compact SOT-467C package, ideal for space-constrained designs.
  • High drain-source breakdown voltage (V(BR)DSS) of 150 V.
  • Gate-source threshold voltage (VGS(th)) range of 2.4 to 1.3 V.

Applications

The CLF1G0035-50H is versatile and can be used in various RF power amplifier circuits, including but not limited to:

  • Broadband communication systems.
  • Industrial and medical RF applications.
  • Aerospace and defense systems.
  • High-frequency RF power amplifiers.

Q & A

  1. What is the output power of the CLF1G0035-50H? The output power of the CLF1G0035-50H is 50 W.
  2. What technology does the CLF1G0035-50H use? The CLF1G0035-50H uses first-generation GaN HEMT technology.
  3. What is the package type of the CLF1G0035-50H? The CLF1G0035-50H is available in the SOT-467C package.
  4. What is the drain-source breakdown voltage (V(BR)DSS) of the CLF1G0035-50H? The drain-source breakdown voltage (V(BR)DSS) is 150 V.
  5. What is the gate-source threshold voltage (VGS(th)) range of the CLF1G0035-50H? The gate-source threshold voltage (VGS(th)) range is 2.4 to 1.3 V.
  6. What are some common applications of the CLF1G0035-50H? Common applications include broadband communication systems, industrial and medical RF applications, aerospace and defense systems, and high-frequency RF power amplifiers.
  7. Is the CLF1G0035-50H RoHS compliant? Yes, the CLF1G0035-50H is RoHS compliant.
  8. What is the operating temperature range of the CLF1G0035-50H? The operating temperature range is -40 to 150°C.
  9. Where can I find detailed specifications for the CLF1G0035-50H? Detailed specifications can be found on the official Ampleon website, as well as on distributor websites such as Digi-Key and LCSC.
  10. Is the CLF1G0035-50H suitable for space-constrained designs? Yes, the CLF1G0035-50H is suitable for space-constrained designs due to its compact SOT-467C package.

Product Attributes

Transistor Type:GaN HEMT
Frequency:3GHz
Gain:11.5dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:150 mA
Power - Output:50W
Voltage - Rated:150 V
Package / Case:SOT467C
Supplier Device Package:SOT467C
0 Remaining View Similar

In Stock

-
83

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV50/AA
DD15S20LV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HT20/AA
RD15S10HT20/AA
CONN D-SUB RCPT 15POS CRIMP
CBC46W4S100T2X
CBC46W4S100T2X
CONN D-SUB RCPT 46POS CRIMP
DD15S20LV3S/AA
DD15S20LV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z00/AA
DD15S20Z00/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S100E30
CBC47W1S100E30
CONN D-SUB RCPT 47POS CRIMP
DD26M20HE2Z/AA
DD26M20HE2Z/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S20000/AA
DD26S20000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26M20HV50/AA
DD26M20HV50/AA
CONN D-SUB HD PLUG 26P SLDR CUP
CBC47W1S1S50V50
CBC47W1S1S50V50
CONN D-SUB RCPT 47POS CRIMP
DD26S2S50V30
DD26S2S50V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0V3X/AA
DD44S32S0V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number CLF1G0035-50H CLF1G0035-50
Manufacturer Ampleon USA Inc. Ampleon USA Inc.
Product Status Active Active
Transistor Type GaN HEMT GaN HEMT
Frequency 3GHz 3GHz
Gain 11.5dB 11.5dB
Voltage - Test 50 V 50 V
Current Rating (Amps) - -
Noise Figure - -
Current - Test 150 mA 150 mA
Power - Output 50W 50W
Voltage - Rated 150 V 150 V
Package / Case SOT467C SOT467C
Supplier Device Package SOT467C SOT467C

Related Product By Categories

BLF647P,112
BLF647P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1121A
BLF6G10LS-135R,112
BLF6G10LS-135R,112
NXP USA Inc.
RF TRANSISTOR
BLF8G10LS-300PU
BLF8G10LS-300PU
Ampleon USA Inc.
RF FET LDMOS 65V 20.5DB SOT539B
BLF184XRSU
BLF184XRSU
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214B
BLF8G20LS-220J
BLF8G20LS-220J
Ampleon USA Inc.
RF FET LDMOS 65V 18.9DB SOT502B
AFT27S012NT1
AFT27S012NT1
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO
BF909A,215
BF909A,215
NXP USA Inc.
MOSFET N-CH SOT-143B
PD55003S
PD55003S
STMicroelectronics
FET RF 40V 500MHZ PWRSO-10
BLF6G22-45,135
BLF6G22-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT608A
BLF278/01,112
BLF278/01,112
Ampleon USA Inc.
RF FET 2 NC 125V 22DB SOT262A1
BLF8G22LS-160BVX
BLF8G22LS-160BVX
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1244B
BF861B
BF861B
NXP USA Inc.
SMALL SIGNAL FIELD-EFFECT TRANSI

Related Product By Brand

MX0912B351Y,114
MX0912B351Y,114
Ampleon USA Inc.
RF TRANS NPN 20V 1.215GHZ CDFM2
BLF881S,112
BLF881S,112
Ampleon USA Inc.
RF MOSFET LDMOS 50V LDMOST
BLF888EU
BLF888EU
Ampleon USA Inc.
RF FET LDMOS 104V 17DB SOT539A
BLF6G10LS-200RN,11
BLF6G10LS-200RN,11
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT502B
BLF8G09LS-270GWQ
BLF8G09LS-270GWQ
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT1244C
BLF7G20LS-200,112
BLF7G20LS-200,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
BLF871,112
BLF871,112
Ampleon USA Inc.
RF FET LDMOS 89V 19DB SOT467C
BLF6G27-10G,112
BLF6G27-10G,112
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C
BLF6G20LS-110,112
BLF6G20LS-110,112
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT502B
BLF6G20S-45,112
BLF6G20S-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 19.2DB SOT608B
BLF6G27-45,135
BLF6G27-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT608A
BLF7G27LS-150P,112
BLF7G27LS-150P,112
Ampleon USA Inc.
RF FET LDMOS 65V 16DB SOT539B