BLF7G27LS-150P,112
  • Share:

Ampleon USA Inc. BLF7G27LS-150P,112

Manufacturer No:
BLF7G27LS-150P,112
Manufacturer:
Ampleon USA Inc.
Package:
Tray
Description:
RF FET LDMOS 65V 16DB SOT539B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF7G27LS-150P,112 is a high-performance RF power LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor manufactured by Ampleon USA Inc. This component is designed for broadband operation, particularly in the frequency range of 2500 MHz to 2700 MHz, making it suitable for various wireless communication and mobile broadband applications.

Key Specifications

ParameterValue
ManufacturerAmpleon USA Inc.
Part NumberBLF7G27LS-150P,112
Transistor TypeLDMOS
Package / CaseSOT539A
Voltage - Rated65V
Power - Output150W
Gain16dB
Frequency Range2500 MHz ~ 2700 MHz
Current Rating28A
Current - Test1.3A

Key Features

  • Excellent ruggedness and reliability.
  • High efficiency, which helps in minimizing power consumption and heat generation.
  • Low thermal resistance (Rth) providing excellent thermal stability.
  • Designed for broadband operation, making it versatile for various applications.

Applications

The BLF7G27LS-150P,112 is primarily used in mobile broadband and wireless communication systems. It is suitable for applications such as base stations, cellular networks, and other high-power RF amplifiers where high efficiency and reliability are crucial.

Q & A

  1. What is the frequency range of the BLF7G27LS-150P,112 transistor?
    The frequency range is 2500 MHz to 2700 MHz.
  2. What is the rated voltage of the BLF7G27LS-150P,112 transistor?
    The rated voltage is 65V.
  3. What is the output power of the BLF7G27LS-150P,112 transistor?
    The output power is 150W.
  4. What package type does the BLF7G27LS-150P,112 transistor use?
    The package type is SOT539A.
  5. What are the key features of the BLF7G27LS-150P,112 transistor?
    Key features include excellent ruggedness, high efficiency, and low thermal resistance.
  6. In which applications is the BLF7G27LS-150P,112 transistor commonly used?
    It is commonly used in mobile broadband and wireless communication systems, such as base stations and cellular networks.
  7. What is the gain of the BLF7G27LS-150P,112 transistor?
    The gain is 16dB.
  8. What is the current rating of the BLF7G27LS-150P,112 transistor?
    The current rating is 28A.
  9. What is the test current for the BLF7G27LS-150P,112 transistor?
    The test current is 1.3A.
  10. Who is the manufacturer of the BLF7G27LS-150P,112 transistor?
    The manufacturer is Ampleon USA Inc.

Product Attributes

Transistor Type:LDMOS (Dual), Common Source
Frequency:2.5GHz ~ 2.7GHz
Gain:16.5dB
Voltage - Test:28 V
Current Rating (Amps):37A
Noise Figure:- 
Current - Test:1.2 A
Power - Output:30W
Voltage - Rated:65 V
Package / Case:SOT-539B
Supplier Device Package:SOT539B
0 Remaining View Similar

In Stock

-
298

Please send RFQ , we will respond immediately.

Same Series
BLF7G27L-150P,112
BLF7G27L-150P,112
RF TRANSISTOR
BLF7G27L-150P,118
BLF7G27L-150P,118
RF FET LDMOS 65V 16DB SOT539A
BLF7G27LS-150P,112
BLF7G27LS-150P,112
RF FET LDMOS 65V 16DB SOT539B

Similar Products

Part Number BLF7G27LS-150P,112 BLF7G27LS-150P,118 BLF7G27L-150P,112
Manufacturer Ampleon USA Inc. Ampleon USA Inc. NXP USA Inc.
Product Status Obsolete Last Time Buy Obsolete
Transistor Type LDMOS (Dual), Common Source LDMOS (Dual), Common Source LDMOS (Dual), Common Source
Frequency 2.5GHz ~ 2.7GHz 2.5GHz ~ 2.7GHz 2.5GHz ~ 2.7GHz
Gain 16.5dB 16.5dB 16.5dB
Voltage - Test 28 V 28 V 28 V
Current Rating (Amps) 37A 37A 37A
Noise Figure - - -
Current - Test 1.2 A 1.2 A 1.2 A
Power - Output 30W 30W 30W
Voltage - Rated 65 V 65 V 65 V
Package / Case SOT-539B SOT-539B SOT-539A
Supplier Device Package SOT539B SOT539B SOT539A

Related Product By Categories

MRFE6VP100HR5
MRFE6VP100HR5
NXP USA Inc.
RF MOSFET LDMOS 50V NI780-4
PD55003TR-E
PD55003TR-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO-10
MRFE6VP5600HR6
MRFE6VP5600HR6
NXP USA Inc.
FET RF 2CH 130V 230MHZ NI1230
PD57045-E
PD57045-E
STMicroelectronics
FET RF 65V 945MHZ PWRSO-10
BLF8G22LS-220J
BLF8G22LS-220J
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
MMRF1004GNR1
MMRF1004GNR1
NXP USA Inc.
FET RF 68V 2.17GHZ TO270G-2
BF1212,215
BF1212,215
NXP USA Inc.
MOSFET N-CH DUAL GATE 6V SOT143B
PD55008L-E
PD55008L-E
STMicroelectronics
TRANSISTOR RF 5X5 POWERFLAT
BLF7G21LS-160P,118
BLF7G21LS-160P,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1121B
BLF7G27LS-140,118
BLF7G27LS-140,118
Ampleon USA Inc.
RF FET LDMOS 65V 16DB SOT502B
BLF6G10LS-200RN
BLF6G10LS-200RN
Ampleon USA Inc.
RF FET LDMOS 65V SOT539
BF512,235
BF512,235
NXP USA Inc.
JFET N-CH 20V 30MA SOT23

Related Product By Brand

BLP7G22-10Z
BLP7G22-10Z
Ampleon USA Inc.
RF FET LDMOS 65V 16DB 12VDFN
CLF1G0035-50
CLF1G0035-50
Ampleon USA Inc.
CLF1G0035-50 - 50W BROADBAND RF
BLF578XR,112
BLF578XR,112
Ampleon USA Inc.
RF MOSFET LDMOS DL 50V SOT539A
CLF1G0035-100PU
CLF1G0035-100PU
Ampleon USA Inc.
RF MOSFET HEMT 50V LDMOST
BLF8G09LS-270GWJ
BLF8G09LS-270GWJ
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT1244C
BLF7G22LS-130,112
BLF7G22LS-130,112
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF2043F,112
BLF2043F,112
Ampleon USA Inc.
RF FET LDMOS 65V 11DB SOT467C
BLF6G27-10G,112
BLF6G27-10G,112
Ampleon USA Inc.
RF FET LDMOS 65V 19DB SOT975C
BLF6G10S-45,112
BLF6G10S-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 23DB SOT608B
BLF278/01,112
BLF278/01,112
Ampleon USA Inc.
RF FET 2 NC 125V 22DB SOT262A1
BLF7G21LS-160P,112
BLF7G21LS-160P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1121B
BLF640U
BLF640U
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT538A