BLF7G10LS-250
  • Share:

Ampleon USA Inc. BLF7G10LS-250

Manufacturer No:
BLF7G10LS-250
Manufacturer:
Ampleon USA Inc.
Package:
Tape & Reel (TR)
Description:
RF FET LDMOS 250W SOT502B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BLF7G10LS-250 is a high-power LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor designed and manufactured by Ampleon USA Inc. This component is specifically tailored for base station applications, operating within the frequency range of 920 MHz to 960 MHz. It is known for its excellent ruggedness and high efficiency, making it a reliable choice for high-power RF amplification needs.

Key Specifications

ParameterValue
Power Output250 W
Frequency Range920 MHz to 960 MHz
Current Rating5 µA (leakage current), 1.8 A (test current)
Transistor TypeLDMOS

Key Features

  • Excellent ruggedness, ensuring durability and reliability in demanding applications.
  • High efficiency, which helps in minimizing power consumption and heat generation.
  • Designed for high-power RF amplification, making it suitable for base station and similar high-power transmission systems.

Applications

The BLF7G10LS-250 is primarily used in base station applications for mobile broadband networks. It is also suitable for other high-power RF amplification needs, such as in broadcast transmitters, radar systems, and other communication infrastructure.

Q & A

  1. What is the power output of the BLF7G10LS-250? The power output of the BLF7G10LS-250 is 250 W.
  2. What is the frequency range of the BLF7G10LS-250? The frequency range is from 920 MHz to 960 MHz.
  3. What type of transistor is the BLF7G10LS-250? It is an LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor.
  4. What are the key features of the BLF7G10LS-250? It features excellent ruggedness and high efficiency.
  5. What are the primary applications of the BLF7G10LS-250? It is primarily used in base station applications for mobile broadband networks.
  6. What is the current rating of the BLF7G10LS-250? The leakage current is 5 µA, and the test current is 1.8 A.
  7. Why is the BLF7G10LS-250 preferred in high-power RF applications? It is preferred due to its high efficiency and excellent ruggedness.
  8. Can the BLF7G10LS-250 be used in other applications besides base stations? Yes, it can be used in other high-power RF amplification needs such as broadcast transmitters and radar systems.
  9. Where can I find detailed specifications for the BLF7G10LS-250? Detailed specifications can be found on the Ampleon website, Digi-Key, and other electronic component distributors.
  10. What is the significance of LDMOS technology in the BLF7G10LS-250? LDMOS technology provides high power density, high efficiency, and excellent thermal performance, making it ideal for high-power RF applications.

Product Attributes

Transistor Type:LDMOS
Frequency:869MHz ~ 960MHz
Gain:19.5dB
Voltage - Test:30 V
Current Rating (Amps):5µA
Noise Figure:- 
Current - Test:1.8 A
Power - Output:250W
Voltage - Rated:65 V
Package / Case:SOT-502B
Supplier Device Package:SOT502B
0 Remaining View Similar

In Stock

-
86

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV50/AA
DD15S20LV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M2S5WV5X
DD26M2S5WV5X
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20LV3S
DD15S20LV3S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE20/AA
CBC13W3S10HE20/AA
CONN D-SUB RCPT 13POS CRIMP
CBC13W3S10HE30/AA
CBC13W3S10HE30/AA
CONN D-SUB RCPT 13POS CRIMP
DD44S32S0TS/AA
DD44S32S0TS/AA
CONN D-SUB HD RCPT 44P VERT SLDR
CBC47W1S100V50
CBC47W1S100V50
CONN D-SUB RCPT 47POS CRIMP
DD26S2S5000
DD26S2S5000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F00X
DD26S2F00X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S1000S
CBC46W4S1000S
CONN D-SUB RCPT 46POS CRIMP
CBC21W1S10HE2X/AA
CBC21W1S10HE2X/AA
CONN D-SUB RCPT 21POS CRIMP
DD44S32S0V5X
DD44S32S0V5X
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

BLF647P,112
BLF647P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT1121A
BLF7G20LS-90P,112
BLF7G20LS-90P,112
NXP USA Inc.
RF PFET, 2-ELEMENT, L BAND, SILI
BLF888B,112
BLF888B,112
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT539A
PD55003S-E
PD55003S-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO10
MRFE6VP5150NR1
MRFE6VP5150NR1
NXP USA Inc.
RF MOSFET LDMOS DL 50V TO270
PD57045-E
PD57045-E
STMicroelectronics
FET RF 65V 945MHZ PWRSO-10
SD4931
SD4931
STMicroelectronics
TRANSISTOR RF MOSFET N-CH M174
BLF7G22LS-130,118
BLF7G22LS-130,118
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT502B
BLF6G22-45,135
BLF6G22-45,135
Ampleon USA Inc.
RF FET LDMOS 65V 18.5DB SOT608A
BF512,215
BF512,215
NXP USA Inc.
JFET N-CH 20V 30MA SOT23
BLF7G15LS-300P,112
BLF7G15LS-300P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539B
MW7IC2425NBR1
MW7IC2425NBR1
NXP USA Inc.
FET RF 65V 2.45GHZ TO-272-16

Related Product By Brand

BLF6G10LS-200RN:11
BLF6G10LS-200RN:11
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT502B
CLF1G0035-100PU
CLF1G0035-100PU
Ampleon USA Inc.
RF MOSFET HEMT 50V LDMOST
BLF8G09LS-270GWQ
BLF8G09LS-270GWQ
Ampleon USA Inc.
RF FET LDMOS 65V 20DB SOT1244C
BLF888AS,112
BLF888AS,112
Ampleon USA Inc.
RF FET LDMOS 110V 21DB SOT539B
BLS6G3135S-120,112
BLS6G3135S-120,112
Ampleon USA Inc.
RF FET LDMOS 60V 11DB SOT502B
BLF6G10LS-260PRN,1
BLF6G10LS-260PRN,1
Ampleon USA Inc.
RF FET LDMOS 65V 22DB SOT539B
BLF878,112
BLF878,112
Ampleon USA Inc.
RF FET LDMOS 89V 21DB SOT979A
BLF647,112
BLF647,112
Ampleon USA Inc.
RF FET LDMOS 65V 14.5DB SOT540A
BLF6G22LS-130,112
BLF6G22LS-130,112
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
BLF7G15LS-300P,112
BLF7G15LS-300P,112
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT539B
BLF6G10S-45K,112
BLF6G10S-45K,112
Ampleon USA Inc.
RF FET LDMOS 65V 23DB SOT608B
BLF6G10LS-200RN
BLF6G10LS-200RN
Ampleon USA Inc.
RF FET LDMOS 65V SOT539