BLF7G10LS-250
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Ampleon USA Inc. BLF7G10LS-250

Manufacturer No:
BLF7G10LS-250
Manufacturer:
Ampleon USA Inc.
Package:
Tape & Reel (TR)
Description:
RF FET LDMOS 250W SOT502B
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The BLF7G10LS-250 is a high-power LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor designed and manufactured by Ampleon USA Inc. This component is specifically tailored for base station applications, operating within the frequency range of 920 MHz to 960 MHz. It is known for its excellent ruggedness and high efficiency, making it a reliable choice for high-power RF amplification needs.

Key Specifications

ParameterValue
Power Output250 W
Frequency Range920 MHz to 960 MHz
Current Rating5 µA (leakage current), 1.8 A (test current)
Transistor TypeLDMOS

Key Features

  • Excellent ruggedness, ensuring durability and reliability in demanding applications.
  • High efficiency, which helps in minimizing power consumption and heat generation.
  • Designed for high-power RF amplification, making it suitable for base station and similar high-power transmission systems.

Applications

The BLF7G10LS-250 is primarily used in base station applications for mobile broadband networks. It is also suitable for other high-power RF amplification needs, such as in broadcast transmitters, radar systems, and other communication infrastructure.

Q & A

  1. What is the power output of the BLF7G10LS-250? The power output of the BLF7G10LS-250 is 250 W.
  2. What is the frequency range of the BLF7G10LS-250? The frequency range is from 920 MHz to 960 MHz.
  3. What type of transistor is the BLF7G10LS-250? It is an LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor.
  4. What are the key features of the BLF7G10LS-250? It features excellent ruggedness and high efficiency.
  5. What are the primary applications of the BLF7G10LS-250? It is primarily used in base station applications for mobile broadband networks.
  6. What is the current rating of the BLF7G10LS-250? The leakage current is 5 µA, and the test current is 1.8 A.
  7. Why is the BLF7G10LS-250 preferred in high-power RF applications? It is preferred due to its high efficiency and excellent ruggedness.
  8. Can the BLF7G10LS-250 be used in other applications besides base stations? Yes, it can be used in other high-power RF amplification needs such as broadcast transmitters and radar systems.
  9. Where can I find detailed specifications for the BLF7G10LS-250? Detailed specifications can be found on the Ampleon website, Digi-Key, and other electronic component distributors.
  10. What is the significance of LDMOS technology in the BLF7G10LS-250? LDMOS technology provides high power density, high efficiency, and excellent thermal performance, making it ideal for high-power RF applications.

Product Attributes

Transistor Type:LDMOS
Frequency:869MHz ~ 960MHz
Gain:19.5dB
Voltage - Test:30 V
Current Rating (Amps):5µA
Noise Figure:- 
Current - Test:1.8 A
Power - Output:250W
Voltage - Rated:65 V
Package / Case:SOT-502B
Supplier Device Package:SOT502B
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