MRFE6VP5300NR1
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NXP USA Inc. MRFE6VP5300NR1

Manufacturer No:
MRFE6VP5300NR1
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
FET RF 2CH 133V 230MHZ TO-270
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MRFE6VP5300NR1 is a high-power RF transistor designed by NXP USA Inc. for applications in the HF, VHF, and UHF frequency ranges. This transistor utilizes advanced MOSFET technology to deliver high performance and efficiency, making it ideal for use in power amplifiers, RF generators, and other RF applications. It is known for its extreme ruggedness and ability to operate across a wide frequency range, enhancing its reliability in various industrial and broadcast environments.

Key Specifications

Rating Symbol Value Unit
Drain-Source Voltage VDS –0.5, +133 Vdc
Gate-Source Voltage VGS –6.0, +10 Vdc
Storage Temperature Range Tstg –65 to +150 °C
Case Operating Temperature Range TC –40 to +150 °C
Operating Junction Temperature Range TJ –40 to +225 °C
Total Device Dissipation @ TC = 25°C PD 909 W W
Derate above 25°C 4.55 W/°C
Thermal Resistance, Junction to Case 81°C
Operating Frequency Range 1.8–600 MHz
Continuous Wave (CW) Power 300 W
Supply Voltage 50 V

Key Features

  • Wide Operating Frequency Range: The transistor operates across a broad frequency range of 1.8–600 MHz, making it versatile for various applications.
  • Extreme Ruggedness: Designed for high VSWR industrial and broadcast applications, including laser and plasma exciters.
  • Unmatched Input and Output: Allows for wide frequency range utilization, enhancing its flexibility in different circuits.
  • Integrated Stability Enhancements: Features built-in stability enhancements to ensure reliable operation.
  • Low Thermal Resistance: Optimized thermal design to manage heat effectively, ensuring high performance and longevity.
  • Integrated ESD Protection Circuitry: Provides protection against electrostatic discharge, enhancing the device's durability.
  • In Tape and Reel: Available in tape and reel packaging for convenient handling and storage.

Applications

The MRFE6VP5300NR1 is suitable for a variety of applications, including:

  • Power Amplifiers: Ideal for use in high-power RF amplifiers due to its high efficiency and ruggedness.
  • RF Generators: Used in RF generators for industrial and broadcast applications.
  • Industrial Applications: Suitable for high VSWR industrial applications, including laser and plasma exciters.
  • Broadcast Applications: Used in both analog and digital broadcast systems).

Q & A

  1. Q: What is the operating frequency range of the MRFE6VP5300NR1?

    A: The MRFE6VP5300NR1 operates across a frequency range of 1.8–600 MHz.

  2. Q: What is the maximum continuous wave (CW) power of the MRFE6VP5300NR1?

    A: The maximum CW power is 300 W.

  3. Q: What is the supply voltage for the MRFE6VP5300NR1?

    A: The supply voltage is 50 V.

  4. Q: Is the MRFE6VP5300NR1 suitable for linear amplification applications?

    A: Yes, it can be used for linear amplification with proper biasing and circuit design.

  5. Q: What are the key features of the MRFE6VP5300NR1?

    A: Key features include wide operating frequency range, extreme ruggedness, unmatched input and output, integrated stability enhancements, low thermal resistance, and integrated ESD protection circuitry.

  6. Q: What are the typical applications of the MRFE6VP5300NR1?

    A: Typical applications include power amplifiers, RF generators, industrial high VSWR applications, and broadcast systems.

  7. Q: What is the package type of the MRFE6VP5300NR1?

    A: The package type is SOT1736-1).

  8. Q: Does the MRFE6VP5300NR1 have built-in ESD protection?

    A: Yes, it has integrated ESD protection circuitry).

  9. Q: What is the thermal resistance of the MRFE6VP5300NR1?

    A: The thermal resistance is optimized for effective heat management, with specific values detailed in the datasheet).

  10. Q: Is the MRFE6VP5300NR1 available in tape and reel packaging?

    A: Yes, it is available in tape and reel packaging).

Product Attributes

Transistor Type:LDMOS (Dual)
Frequency:230MHz
Gain:27dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:100 mA
Power - Output:300W
Voltage - Rated:133 V
Package / Case:TO-270AB
Supplier Device Package:TO-270 WB-4
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Same Series
MRFE6VP5300GNR1
MRFE6VP5300GNR1
FET RF 2CH 133V 230MHZ TO-270 GW

Similar Products

Part Number MRFE6VP5300NR1 MRFE6VP5300GNR1
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Active
Transistor Type LDMOS (Dual) LDMOS (Dual)
Frequency 230MHz 230MHz
Gain 27dB 27dB
Voltage - Test 50 V 50 V
Current Rating (Amps) - -
Noise Figure - -
Current - Test 100 mA 100 mA
Power - Output 300W 300W
Voltage - Rated 133 V 133 V
Package / Case TO-270AB TO-270BB
Supplier Device Package TO-270 WB-4 TO-270 WB-4 Gull

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